公开(公告)号：US5294811A

公开(公告)日：1994-03-15

申请号：US801350

申请日：1991-12-02

申请人： Takashi Aoyama ,  Kazuhiro Ogawa ,  Yasuhiro Mochizuki ,  Naohiro Momma ,  Katsuhisa Usami

发明人： Takashi Aoyama ,  Kazuhiro Ogawa ,  Yasuhiro Mochizuki ,  Naohiro Momma ,  Katsuhisa Usami

IPC分类号： H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/04 ,  H01L27/01 ,  H01L31/036

CPC分类号： H01L27/12 ,  H01L29/458 ,  H01L29/78669 ,  H01L29/78678

摘要： TFTs with an inverted stagger structure are fabricated according to the invention as follows; a glass substrate after depositing amorphous silicon (a-Si) thereupon is transferred to a laser annealing chamber which is kept in non-oxidation ambient and provided with a sample holder and a substrate heating mechanism. The substrate is fixed on the sample holder, then subjected to laser annealing while being heated from the glass substrate side, thereby growing polycrystalline silicon having substantially improved crystallinity, on which a-Si is further deposited. According to this process of the invention, it is capable of forming TFTs having a higher mobility and a smaller leakage current in the periphery of the substrate, with addition of almost no changes to the process and device structures of conventional TFTs which constitute pixels, and even more the peripheral drive circuitry is capable of being integrated in the display substrate.

摘要翻译： 根据本发明如下制造具有反交错结构的TFT： 将沉积非晶硅（a-Si）后的玻璃基板转移到保持在非氧化环境中的激光退火室，并且设置有样品保持器和基板加热机构。 将基板固定在样品保持器上，然后在从玻璃基板侧加热的同时进行激光退火，从而生长出具有显着改善的结晶度的多晶硅，其中进一步沉积a-Si。 根据本发明的这个方法，能够在衬底周围形成具有较高迁移率和较小漏电流的TFT，并且几乎不改变构成像素的传统TFT的工艺和器件结构，以及 外围驱动电路甚至能够集成在显示基板中。

公开(公告)号：US08808473B2

公开(公告)日：2014-08-19

申请号：US13472640

申请日：2012-05-16

申请人： Hiroyuki Hirata ,  Hirokazu Okada ,  Hiroyuki Semba ,  Kazuhiro Ogawa ,  Atsuro Iseda ,  Mitsuru Yoshizawa

发明人： Hiroyuki Hirata ,  Hirokazu Okada ,  Hiroyuki Semba ,  Kazuhiro Ogawa ,  Atsuro Iseda ,  Mitsuru Yoshizawa

IPC分类号： C22C19/05

CPC分类号： C22C19/055

摘要： An austenitic heat resistant alloy includes, by mass percent, C: 0.15% or less, Si: 2% or less, Mn: 3% or less, Ni: 40 to 60%, Co: 10.14 to 25%, Cr: 15% or more and less than 28%, either one or both of Mo: 12% or less and W: less than 0.05%, the total content thereof being 0.1 to 12%, Nd: 0.001 to 0.1%, B: 0.0005 to 0.006%, N: 0.03% or less, O: 0.03% or less, at least one selected from Al: 1.36% or less, Ti: 3% or less, and Nb: 3% or less, and the balance being Fe and impurities. The contents of P and S in the impurities are P: 0.03% or less and S: 0.01% or less. The alloy satisfies 1≦4×Al+2×Ti+Nb≦12 and P+0.2×Cr×B≦0.035, where an element in the Formulas represents the content by mass percent.

摘要翻译： 奥氏体系耐热合金的质量百分比含有：C：0.15％以下，Si：2％以下，Mn：3％以下，Ni：40〜60％，Co：10.14〜25％，Cr：15％ 以上且小于28％，Mo：12％以下，W：小于0.05％，其总含量为0.1〜12％，Nd：0.001〜0.1％，B：0.0005〜0.006％ ，N：0.03％以下，O：0.03％以下，Al：1.36％以下，Ti：3％以下，Nb：3％以下中的至少一种，余量为Fe和杂质。 杂质中P和S的含量为P：0.03％以下，S：0.01％以下。 合金满足1＆nlE; 4×Al + 2×Ti + Nb＆nlE; 12和P + 0.2×Cr×B＆nlE; 0.035，式中的元素表示质量百分含量。

公开(公告)号：US20130222647A1

公开(公告)日：2013-08-29

申请号：US13883429

申请日：2012-04-25

申请人： Akihiro Ishihara ,  Kazuhiro Ogawa ,  Kazuya Matsumoto ,  Yoshihiko Narita

发明人： Akihiro Ishihara ,  Kazuhiro Ogawa ,  Kazuya Matsumoto ,  Yoshihiko Narita

IPC分类号： H04N5/262

CPC分类号： H04N5/2621 ,  G06T15/503 ,  G06T19/006 ,  H04N5/272

摘要： Background object disposing means (88) disposes a background object (74) representing a background, which is photographed outside a target region (62) of a photographed image (60), on a virtual space (70). Subject object disposing means (90) disposes a subject object (74) between a viewpoint (72) and the background object (76) so that a position at which the subject object (76) is displayed to be superimposed on the background object (74) in a virtual space image (64), and a position of the target region (62) in the photographed image (60), correspond to each other. Composition target object disposing means (92) disposes a composition target object (78) representing a composition target, which is to be displayed to be combined with a real-world space (70) in the virtual space image (64), between the background object (74) and the subject object (76).

摘要翻译： 背景物体设置装置（88）将表示背景的背景物体（74）配置在虚拟空间（70）上，所述背景物体被拍摄在拍摄图像（60）的目标区域（62）之外。 被摄体物体设置装置（90）将物体（74）放置在视点（72）和背景物体（76）之间，使得被摄对象（76）显示在背景物体（74）上的位置 ）在虚拟空间图像（64）中，并且所述拍摄图像（60）中的所述目标区域（62）的位置彼此对应。 合成目标对象设置装置（92）将表示要与虚拟空间图像（64）中的真实世界空间（70）进行显示的组合目标对象的构图对象物（78）配置在背景 对象（74）和被摄体（76）。

公开(公告)号：US20120288400A1

公开(公告)日：2012-11-15

申请号：US13472640

申请日：2012-05-16

申请人： Hiroyuki Hirata ,  Hirokazu Okada ,  Hiroyuki Semba ,  Kazuhiro Ogawa ,  Atsuro Iseda ,  Mitsuru Yoshizawa

发明人： Hiroyuki Hirata ,  Hirokazu Okada ,  Hiroyuki Semba ,  Kazuhiro Ogawa ,  Atsuro Iseda ,  Mitsuru Yoshizawa

IPC分类号： C22C19/05

CPC分类号： C22C19/055

摘要： An austenitic heat resistant alloy consisting of, by mass percent, C: 0.15% or less, Si: 2% or less, Mn: 3% or less, Ni: 40 to 60%, Co: 0.03 to 25%, Cr: 15% or more and less than 28%, either one or both of Mo: 12% or less and W: less than 4%, the total content thereof being 0.1 to 12%, Nd: 0.001 to 0.1%, B: 0.0005 to 0.006%, N: 0.03% or less, O: 0.03% or less, at least one selected from Al: 3% or less, Ti: 3% or less, and Nb: 3% or less, the balance being Fe and impurities. The contents of P and S in the impurities being P: 0.03% or less and S: 0.01% or less. The alloy satisfies 1≦4×Al+2×Ti+Nb≦12 and P+0.2×Cr×B≦0.035, is excellent in weld crack resistance and toughness of HAZ, and is further excellent in creep strength at high temperatures.

摘要翻译： 一种奥氏体系耐热合金，以质量％计含有C：0.15％以下，Si：2％以下，Mn：3％以下，Ni：40〜60％，Co：0.03〜25％，Cr：15 ％以上且小于28％，Mo：12％以下，W：小于4％，其总含量为0.1〜12％，Nd：0.001〜0.1％，B：0.0005〜0.006 ％，N：0.03％以下，O：0.03％以下，选自Al：3％以下，Ti：3％以下，Nb：3％以下，余量为Fe和杂质中的至少一种。 杂质中P和S的含量为：0.03％以下，S：0.01％以下。 合金满足1＆nlE; 4×Al + 2×Ti + Nb＆nlE; 12和P + 0.2×Cr×B＆nlE; 0.035，HAZ的耐熔融裂纹性和韧性优异，并且在高温下的蠕变强度更优异。

公开(公告)号：US08300035B2

公开(公告)日：2012-10-30

申请号：US12481892

申请日：2009-06-10

申请人： Kazuhiro Ogawa ,  Kazuhiko Yanagawa

发明人： Kazuhiro Ogawa ,  Kazuhiko Yanagawa

IPC分类号： G09G3/38

CPC分类号： G02F1/13452 ,  G02F1/134363 ,  H01L2924/0002 ,  H05K1/117 ,  H05K3/244 ,  H05K3/28 ,  H05K3/323 ,  H05K3/3452 ,  H05K3/361 ,  H05K2201/09709 ,  H05K2201/10659 ,  H05K2201/10681 ,  H01L2924/00

摘要： A display device includes a display panel, a printed circuit board, a plurality of semiconductor devices which are film-like substrates with an IC chip, and a monolithic anisotropic conductive film disposed on the printed circuit board. Each of the semiconductor devices has a first side portion and a second side portion opposite to the first side portion. The first side portion is connected to the printed circuit board via the monolithic anisotropic conductive film, and the second side portion is connected to the display panel. Further the first side portion of each of the semiconductor devices is respectively connected at separated portions of the monolithic anisotropic conductive film.

摘要翻译： 显示装置包括显示面板，印刷电路板，作为具有IC芯片的薄膜状基板的多个半导体装置以及布置在印刷电路板上的整体式各向异性导电膜。 每个半导体器件具有与第一侧部相对的第一侧部分和第二侧部分。 第一侧部通过单片式各向异性导电膜与印刷电路板连接，第二侧部与显示面板连接。 此外，每个半导体器件的第一侧部分别分别连接在单片各向异性导电膜的分离部分。

公开(公告)号：US20120008076A1

公开(公告)日：2012-01-12

申请号：US13206951

申请日：2011-08-10

申请人： Masuyuki Ohta ,  Kazuhiro Ogawa ,  Keiichiro Ashizawa ,  Kazuhiko Yanagawa ,  Masahiro Yanai ,  Nobutake Konishi ,  Nobuyuki Suzuki ,  Masahiro Ishii ,  Makoto Yoneya ,  Sukekazu Aratani

发明人： Masuyuki Ohta ,  Kazuhiro Ogawa ,  Keiichiro Ashizawa ,  Kazuhiko Yanagawa ,  Masahiro Yanai ,  Nobutake Konishi ,  Nobuyuki Suzuki ,  Masahiro Ishii ,  Makoto Yoneya ,  Sukekazu Aratani

IPC分类号： G02F1/1333

CPC分类号： G02F1/134363 ,  G02F1/13439 ,  G02F1/1345 ,  G02F1/1362 ,  G02F2001/133749

摘要： An active matrix type liquid crystal display device includes first and second substrates, a liquid crystal layer disposed between the first and second substrates, a plurality of pixel regions formed by image signal lines and scan signal lines, and a semiconductor layer, a pixel electrode, a counter electrode formed on the first substrate in a pixel region. The pixel electrode is arranged at level which is lower than a level of the semiconductor layer.

摘要翻译： 有源矩阵型液晶显示装置包括第一和第二基板，设置在第一和第二基板之间的液晶层，由图像信号线和扫描信号线形成的多个像素区域，以及半导体层，像素电极， 在像素区域中形成在第一基板上的对电极。 像素电极布置在低于半导体层的电平的电平。

公开(公告)号：US20110080596A1

公开(公告)日：2011-04-07

申请号：US12891900

申请日：2010-09-28

申请人： You Sasaki ,  Kazuhiro Ogawa ,  Takaaki Yamazaki ,  Shigeyuki Yamaguchi ,  Ryousuke Miyoshi

发明人： You Sasaki ,  Kazuhiro Ogawa ,  Takaaki Yamazaki ,  Shigeyuki Yamaguchi ,  Ryousuke Miyoshi

IPC分类号： G01B11/14

CPC分类号： G01B5/008 ,  G01B11/03 ,  G01B21/04 ,  G01C15/06 ,  G01C21/165 ,  G01S19/45 ,  G01S19/49

摘要： The invention provides a measuring method for installing a measuring rod 6 in a predetermined relation with respect to a coordinate system set to a mobile object 1, for transcribing a predetermined position of the measuring rod on a ground surface where the mobile object is set, for transcribing a measuring point of an object to be measured as set on the mobile object to the ground surface, for measuring a distance on the ground surface between the transcribed predetermined position and the transcribed measuring point, for obtaining a relation between the measuring point and the measuring rod on the ground based on a result of distance measurement, and for obtaining a position on a horizontal coordinate plane in the coordinate system of the measuring point based on the obtained relation and on the relation with the measuring rod with respect to the coordinate system, and the invention also provides a method for measuring a vertical distance between the predetermined position and the ground surface and a vertical distance between the measuring point and the ground surface, and for measuring three-dimensional position of the measuring point in the coordinate system.

摘要翻译： 本发明提供了一种测量方法，用于将测量杆6相对于设置在移动体1上的坐标系设置为预定关系，用于将测量杆的预定位置转印到设置有移动物体的地面上，以便 将要设置在所述移动物体上的被测量物体的测量点转印到所述地面，以测量所述转录的预定位置和所述转录测量点之间的地面上的距离，以获得所述测量点和所述转录测量点之间的关系 基于距离测量的结果在地面上的测量杆，并且基于获得的关系以及与测量杆相对于坐标系的关系来获得测量点的坐标系中的水平坐标平面上的位置 本发明还提供了一种用于测量预定位置和格栅之间的垂直距离的方法 测量点和地面之间的垂直距离，并用于测量坐标系中测量点的三维位置。

公开(公告)号：US20100195038A1

公开(公告)日：2010-08-05

申请号：US12760902

申请日：2010-04-15

申请人： Masuyuki Ohta ,  Kazuhiro Ogawa ,  Keiichiro Ashizawa ,  Kazuhiko Yanagawa ,  Masahiro Yanai ,  Nobutake Konishi ,  Nobuyuki Suzuki ,  Masahiro Ishii ,  Makoto Yoneya ,  Sukekazu Aratani

发明人： Masuyuki Ohta ,  Kazuhiro Ogawa ,  Keiichiro Ashizawa ,  Kazuhiko Yanagawa ,  Masahiro Yanai ,  Nobutake Konishi ,  Nobuyuki Suzuki ,  Masahiro Ishii ,  Makoto Yoneya ,  Sukekazu Aratani

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F1/13439 ,  G02F1/1345 ,  G02F1/1362 ,  G02F2001/133749

摘要： An active matrix liquid crystal display device includes first and second substrates, a liquid crystal layer disposed between the first and second substrates, and plural image signal lines and scan signal lines formed on the first substrate. Respective pixel regions are formed by adjacent image signal lines and adjacent scan signal lines, and the respective pixel regions have at least one of a semiconductor layer, a pixel electrode, a counter electrode, and a source electrode which connects the semiconductor layer to the pixel electrode. The pixel electrode is formed between the source electrode and the first substrate.

摘要翻译： 有源矩阵液晶显示装置包括第一和第二基板，设置在第一和第二基板之间的液晶层，以及形成在第一基板上的多个图像信号线和扫描信号线。 各个像素区域由相邻的图像信号线和相邻的扫描信号线形成，并且各个像素区域具有将半导体层与像素连接的半导体层，像素电极，对电极和源电极中的至少一个 电极。 像素电极形成在源电极和第一衬底之间。

公开(公告)号：US20090232694A1

公开(公告)日：2009-09-17

申请号：US12379724

申请日：2009-02-27

申请人： Hisashi Amaya ,  Kazuhiro Ogawa ,  Akira Taniyama ,  Masakatsu Ueda ,  Hideki Takabe

发明人： Hisashi Amaya ,  Kazuhiro Ogawa ,  Akira Taniyama ,  Masakatsu Ueda ,  Hideki Takabe

IPC分类号： C22C38/40 ,  C22C38/42 ,  C22C38/44 ,  C22C38/46 ,  C22C38/50

CPC分类号： C22C38/02 ,  C22C38/005 ,  C22C38/04 ,  C22C38/06 ,  C22C38/40

摘要： A martensitic stainless steel for welded structures including by mass %, C: 0.001 to 0.05%, Si: 0.05 to 1%, Mn: 0.05 to 2%, P: 0.03% or less, REM: 0.0005 to 0.1%, Cr: 8 to 16%, Ni: 0.1 to 9% and sol. Al: 0.001 to 0.1%; and further including one or more elements selected from among Ti: 0.005 to 0.5%, Zr: 0.005 to 0.5%, Hf: 0.005 to 0.5%, V: 0.005 to 0.5% and Nb: 0.005 to 0.5%; and O: 0.005% or less, N: 0.1% or less, with the balance being Fe and impurities; and the P and REM content satisfies: P≦0.6×REM. This steel possesses excellent SCC (stress corrosion cracking) resistance in welded sections in Sweet environments.

摘要翻译： 焊接结构的马氏体系不锈钢，以质量％计，C：0.001〜0.05％，Si：0.05〜1％，Mn：0.05〜2％，P：0.03％以下，REM：0.0005〜0.1％，Cr：8 至16％，Ni：0.1〜9％，溶胶。 Al：0.001〜0.1％ 进一步包括选自Ti：0.005〜0.5％，Zr：0.005〜0.5％，Hf：0.005〜0.5％，V：0.005〜0.5％，Nb：0.005〜0.5％的一种或多种元素; O：0.005％以下，N：0.1％以下，余量为Fe和杂质; P和REM含量满足：P <= 0.6×REM。 这种钢在甜蜜环境中的焊接部分具有优异的SCC（应力腐蚀开裂）性。

公开(公告)号：US20090167997A1

公开(公告)日：2009-07-02

申请号：US12395805

申请日：2009-03-02

申请人： Masuyuki Ohta ,  Kazuhiro Ogawa ,  Keiichiro Ashizawa ,  Kazuhiko Yanagawa ,  Masahiro Yanai ,  Nobutake Konishi ,  Nobuyuki Suzuki ,  Masahiro Ishii ,  Makoto Yoneya ,  Sukekazu Aratani

发明人： Masuyuki Ohta ,  Kazuhiro Ogawa ,  Keiichiro Ashizawa ,  Kazuhiko Yanagawa ,  Masahiro Yanai ,  Nobutake Konishi ,  Nobuyuki Suzuki ,  Masahiro Ishii ,  Makoto Yoneya ,  Sukekazu Aratani

IPC分类号： G02F1/1335

CPC分类号： G02F1/134363 ,  G02F1/13439 ,  G02F1/1345 ,  G02F1/1362 ,  G02F2001/133749

摘要： An active matrix liquid crystal display device includes first and second substrates, a liquid crystal layer disposed between the first and second substrates, and plural image signal lines and scan signal lines formed on the first substrate. Respective pixel regions are formed by adjacent image signal lines and adjacent scan signal lines and have at least an active device. A light shield layer is formed between the first substrate and at least one of the image signal lines and is elongated in a direction of extension of the at least one of the image signal lines. The light shield layer and the at least one of the scan signal lines are formed on a same layer on the first substrate.

摘要翻译： 有源矩阵液晶显示装置包括第一和第二基板，设置在第一和第二基板之间的液晶层，以及形成在第一基板上的多个图像信号线和扫描信号线。 各个像素区域由相邻的图像信号线和相邻的扫描信号线形成，并且至少具有有源器件。 在第一基板和图像信号线中的至少一个之间形成遮光层，并且沿着至少一个图像信号线的延伸方向延伸。 遮光层和至少一个扫描信号线形成在第一基板上的同一层上。