公开(公告)号：US5294811A

公开(公告)日：1994-03-15

申请号：US801350

申请日：1991-12-02

申请人： Takashi Aoyama ,  Kazuhiro Ogawa ,  Yasuhiro Mochizuki ,  Naohiro Momma ,  Katsuhisa Usami

发明人： Takashi Aoyama ,  Kazuhiro Ogawa ,  Yasuhiro Mochizuki ,  Naohiro Momma ,  Katsuhisa Usami

IPC分类号： H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L29/04 ,  H01L27/01 ,  H01L31/036

CPC分类号： H01L27/12 ,  H01L29/458 ,  H01L29/78669 ,  H01L29/78678

摘要： TFTs with an inverted stagger structure are fabricated according to the invention as follows; a glass substrate after depositing amorphous silicon (a-Si) thereupon is transferred to a laser annealing chamber which is kept in non-oxidation ambient and provided with a sample holder and a substrate heating mechanism. The substrate is fixed on the sample holder, then subjected to laser annealing while being heated from the glass substrate side, thereby growing polycrystalline silicon having substantially improved crystallinity, on which a-Si is further deposited. According to this process of the invention, it is capable of forming TFTs having a higher mobility and a smaller leakage current in the periphery of the substrate, with addition of almost no changes to the process and device structures of conventional TFTs which constitute pixels, and even more the peripheral drive circuitry is capable of being integrated in the display substrate.

摘要翻译： 根据本发明如下制造具有反交错结构的TFT： 将沉积非晶硅（a-Si）后的玻璃基板转移到保持在非氧化环境中的激光退火室，并且设置有样品保持器和基板加热机构。 将基板固定在样品保持器上，然后在从玻璃基板侧加热的同时进行激光退火，从而生长出具有显着改善的结晶度的多晶硅，其中进一步沉积a-Si。 根据本发明的这个方法，能够在衬底周围形成具有较高迁移率和较小漏电流的TFT，并且几乎不改变构成像素的传统TFT的工艺和器件结构，以及 外围驱动电路甚至能够集成在显示基板中。

公开(公告)号：US5433788A

公开(公告)日：1995-07-18

申请号：US131519

申请日：1993-10-04

申请人： Yasuhiro Mochizuki ,  Naohiro Momma ,  Shigeru Takahashi ,  Takuya Fukuda ,  Noboru Suzuki ,  Tadasi Sonobe ,  Kiyoshi Chiba ,  Kazuo Suzuki

发明人： Yasuhiro Mochizuki ,  Naohiro Momma ,  Shigeru Takahashi ,  Takuya Fukuda ,  Noboru Suzuki ,  Tadasi Sonobe ,  Kiyoshi Chiba ,  Kazuo Suzuki

IPC分类号： C23C16/511 ,  H01J37/32 ,  H05H1/46 ,  C23C16/50

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32678 ,  H05H1/46

摘要： A plasma treatment apparatus for forming a thin film on a substrate in a vacuum vessel includes a magnetic field generator which can be positioned inside or outside the vacuum vessel, and a microwave source. The magnetic field strength is controllable such that an electron cyclotron resonance (ECR) area is defined near the substrate. The magnetic field generator can be arranged so that plasma and reactive gas introduction ports are on the microwave introduction side of the ECR area and the substrate is on the opposite side of the ECR area. Alternatively, a gas introduction port can be positioned such that reactive gas is introduced into the ECR area or onto the substrate.

摘要翻译： 用于在真空容器中的基板上形成薄膜的等离子体处理装置包括可位于真空容器内部或外部的磁场发生器和微波源。 磁场强度是可控制的，使得在衬底附近限定电子回旋共振（ECR）区域。 磁场发生器可以布置成等离子体和反应性气体引入口位于ECR区域的微波引入侧，衬底位于ECR区域的相对侧。 或者，可以将气体引入口定位成使得反应气体被引入到ECR区域或衬底上。

公开(公告)号：US4876983A

公开(公告)日：1989-10-31

申请号：US145371

申请日：1988-01-19

申请人： Takuya Fukuda ,  Yasuhiro Mochizuki ,  Naohiro Momma ,  Shigeru Takahashi ,  Noboru Suzuki ,  Tadasi Sonobe ,  Kiyosi Chiba ,  Kazuo Suzuki

发明人： Takuya Fukuda ,  Yasuhiro Mochizuki ,  Naohiro Momma ,  Shigeru Takahashi ,  Noboru Suzuki ,  Tadasi Sonobe ,  Kiyosi Chiba ,  Kazuo Suzuki

IPC分类号： C23C16/511 ,  H01J37/32

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32678

摘要： A plasma operation apparatus utilizes plasma generated by a microwave cooperative with a magnetic field as to perform a surface operation on a specimen such as semiconductor substrates, such as, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.

公开(公告)号：US5247375A

公开(公告)日：1993-09-21

申请号：US986893

申请日：1992-12-08

申请人： Yasuhiro Mochizuki ,  Takashi Aoyama

发明人： Yasuhiro Mochizuki ,  Takashi Aoyama

IPC分类号： G02F1/1362

CPC分类号： G02F1/13454

摘要： A display device such as a liquid crystal display device is provided which comprises a single substrate, a plurality of thin film semiconductor elements provided on the substrate, a plurality of display elements whose pixel display is controlled by the semiconductor elements, and electrodes for driving the display elements. The substrate includes a display zone having the thin film semiconductor elements arranged in the display elements as well as a non-display zone. The non-display zone has a display scan drive circuit area and a display signal drive circuit area. The thin film semiconductor elements are formed in the both zones. A distance between the display signal drive circuit area and the semiconductor elements of the display zone on the substrate is physically arranged so as be larger than a distance between the display scan drive circuit area and the semiconductor elements of the display zone. In the display device, the multiplicity of semiconductor elements are formed on a glass substrate having one side of several or more inches so that minimum processing dimensions of the semiconductor elements in the display zone are smaller than those in the non-display zone.

摘要翻译： 提供了诸如液晶显示装置的显示装置，其包括单个基板，设置在基板上的多个薄膜半导体元件，其像素显示由半导体元件控制的多个显示元件和用于驱动 显示元素。 衬底包括具有布置在显示元件中的薄膜半导体元件以及非显示区的显示区。 非显示区域具有显示扫描驱动电路区域和显示信号驱动电路区域。 薄膜半导体元件形成在两个区域中。 显示信号驱动电路区域和衬底上的显示区域的半导体元件之间的距离物理地布置成大于显示扫描驱动电路区域和显示区域的半导体元件之间的距离。 在显示装置中，多个半导体元件形成在具有几个或更多英寸的一侧的玻璃基板上，使得显示区域中的半导体元件的最小处理尺寸小于非显示区域中的半导体元件的最小处理尺寸。

公开(公告)号：US07319465B2

公开(公告)日：2008-01-15

申请号：US10648789

申请日：2003-08-27

申请人： Yoshiro Mikami ,  Hiroki Kaneko ,  Yasuhiro Mochizuki ,  Katsumi Kondo

发明人： Yoshiro Mikami ,  Hiroki Kaneko ,  Yasuhiro Mochizuki ,  Katsumi Kondo

IPC分类号： G09G5/00 ,  G06F3/038

CPC分类号： G09G3/344 ,  G09G3/3648 ,  G09G2300/0408 ,  G09G2300/0842 ,  G09G2300/0857 ,  G09G2310/027 ,  G09G2310/04 ,  G09G2320/10 ,  G09G2330/02 ,  G09G2330/021

摘要： For a display device having a solar cell and a power buffer for keeping stored electric power, a display system which has a low-power drive mode, self-contained power and no need for recharging or power wiring is provided. The display system includes a solar cell using a thin-film semiconductor, a power storage element for temporarily storing the produced power, a driving circuit, a matrix display unit, a display rewrite instruction unit for inputting screen rewrite and a control circuit and starts rewriting a display when power sufficient to rewrite an image screen is stored in the solar cell. The display device having remarkable portability and no limited battery life, which controls a display mode depending on the power produced by the solar cell, can display even when power generation is low and allows self-contained power even if the storage element has a small capacity, can be obtained.

摘要翻译： 对于具有用于保持存储电力的太阳能电池和电源缓冲器的显示装置，提供具有低功率驱动模式，独立电源并且不需要充电或电力布线的显示系统。 显示系统包括使用薄膜半导体的太阳能电池，用于临时存储所产生的电力的电力存储元件，驱动电路，矩阵显示单元，用于输入屏幕重写的显示重写指令单元和控制电路，并开始重写 在足够重写图像屏幕的电力时的显示器被存储在太阳能电池中。 即使在发电量低的情况下，也能够显示出依赖太阳能电池产生的功率来控制显示模式的显示便携性和电池寿命有限的显示装置，即使存储元件的容量小 ， 可以获得。

公开(公告)号：US4154632A

公开(公告)日：1979-05-15

申请号：US931390

申请日：1978-08-07

申请人： Yasuhiro Mochizuki ,  Hiroaki Hachino ,  Yutaka Misawa

发明人： Yasuhiro Mochizuki ,  Hiroaki Hachino ,  Yutaka Misawa

IPC分类号： H01L21/225

CPC分类号： H01L21/2254 ,  Y10S148/033

摘要： An aluminum diffusion source layer is formed by vacuum evaporation on a major surface of a silicon substrate. The silicon substrate is heated to form an aluminum-silicon alloy layer, an aluminum doped silicon recrystallization layer and an aluminum diffusion layer. Thereafter, the aluminum-silicon alloy layer is removed from the major surface of the silicon substrate. Drive-in diffusion is performed so as to diffuse, aluminum included in the silicon recrystallization layer and the aluminum diffusion layer, into the silicon substrate. As a result, the aluminum diffusion concentration of 10.sup.16 -10.sup.19 atoms/cm.sup.3 can be obtained.

摘要翻译： 通过在硅衬底的主表面上真空蒸发形成铝扩散源层。 加热硅衬底以形成铝 - 硅合金层，铝掺杂硅再结晶层和铝扩散层。 此后，从硅衬底的主表面去除铝 - 硅合金层。 进行驱入扩散，以将包含在硅再结晶层中的铝和铝扩散层扩散到硅衬底中。 结果，可以获得1016-1019原子/ cm3的铝扩散浓度。

公开(公告)号：US20130009649A1

公开(公告)日：2013-01-10

申请号：US13577703

申请日：2011-02-04

申请人： Noriaki Sasaki ,  Yasuhiro Mochizuki

发明人： Noriaki Sasaki ,  Yasuhiro Mochizuki

IPC分类号： G01R31/04

CPC分类号： B60R16/0207 ,  G01R31/045

摘要： A wire harness continuity inspection method includes: specifying a first certain electrical wire and a second certain electrical wire of which one end is connected to the other end of the first certain electrical wire, described in the first region-based connector/wiring information, and regarding them as a single electrical wire; referring to auxiliary device-based wiring information to obtain a first terminal of a first electrical component and a second terminal of a second electrical component connected by a circuit line, which are described in the auxiliary device-based wiring information; referring to the region-based connector/wiring information to specify a first electrical wire of which one end is connected to the first terminal of the first electrical component, described in the region-based connector/wiring information; and determining whether the terminal connected to the other end of the first electrical wire is identical to the second terminal of the second electrical component.

摘要翻译： 线束连续性检查方法包括：在第一区域连接器/布线信息中描述的第一特定电线和第一特定电线，其一端连接到第一特定电线的另一端，以及 将其作为单根电线; 参考基于辅助设备的布线信息，以获得在基于辅助设备的布线信息中描述的第一电气部件的第一端子和由电路线连接的第二电气部件的第二端子; 参考基于区域的连接器/布线信息，以指定在基于区域的连接器/布线信息中描述的第一电线，其一端连接到第一电气部件的第一端子; 以及确定连接到第一电线的另一端的端子是否与第二电气部件的第二端子相同。

公开(公告)号：US06300415B1

公开(公告)日：2001-10-09

申请号：US09068949

申请日：1998-08-14

申请人： Chikashi Okayama ,  Takanori Nakashima ,  Masami Kimura ,  Mayumi Wakata ,  Kazuhiro Kimura ,  Toshiki Yamamoto ,  Hirohisa Ishii ,  Masataka Sugimoto ,  Kunio Gouda ,  Yasuhiro Mochizuki ,  Noriaki Saito ,  Junichiro Yokota ,  Shouji Kawano ,  Yasuhiko Nakagawa

发明人： Chikashi Okayama ,  Takanori Nakashima ,  Masami Kimura ,  Mayumi Wakata ,  Kazuhiro Kimura ,  Toshiki Yamamoto ,  Hirohisa Ishii ,  Masataka Sugimoto ,  Kunio Gouda ,  Yasuhiro Mochizuki ,  Noriaki Saito ,  Junichiro Yokota ,  Shouji Kawano ,  Yasuhiko Nakagawa

IPC分类号： C08L2312

CPC分类号： C08J5/18 ,  B32B27/32 ,  C08F110/06 ,  C08F210/06 ,  C08F255/02 ,  C08F297/083 ,  C08J2323/10 ,  C08L23/0815 ,  C08L23/10 ,  C08L23/16 ,  C08L51/06 ,  C08L53/00 ,  C08L2666/04 ,  C08L2666/02 ,  C08F2500/15 ,  C08F2500/12 ,  C08F2500/26 ,  C08F210/16 ,  C08F2500/17

摘要： A polypropylene composition for the production of various molded articles which are excellent in moldability, mold shrinkage factor on molding, rigidity, flexibility, impact resistance, in particular low-temperature impact resistance, transparency, gloss, stress-whitening resistance, and the balance thereof; various molded articles having the above properties; a propylene composition which is suitable for a base resin for the polypropylene composition; and a process for the production thereof. The propylene composition comprises a propylene homopolymer and a propylene-ethylene copolymer, the intrinsic viscosity of the copolymer ([&eegr;]RC) is in the range of 1.7 to 2.8 dl/g, the intrinsic viscosity ratio of the homopolymer to the copolymer ([&eegr;]RC/[&eegr;]pp) is in the range of 0.7 to 1.2 and a product [(WPP/WRC)×([&eegr;]RC/[&eegr;]pp)] of the weight ratio (WPP/WRC) of the homopolymer to the copolymer and the intrinsic viscosity ratio thereof is in the range of 1.0 to 3.0.

摘要翻译： 用于生产成型性，成型时的成型收缩率，刚性，柔软性，耐冲击性，特别是低温耐冲击性，透明性，光泽，耐应力增白性及其余量的各种成型品的聚丙烯组合物 ; 具有上述特性的各种成型品; 适用于聚丙烯组合物的基础树脂的丙烯组合物; 及其生产方法。 丙烯组合物包含丙烯均聚物和丙烯 - 乙烯共聚物，共聚物的特性粘度（ηRC）在1.7至2.8dl / g的范围内，均聚物与共聚物的特性粘度比（[ ηWP /ηpp）在0.7至1.2的范围内，并且产物[（WPP / WRC）x（ηRC /ηpp）]的重量比（WPP / WRC） 共聚物的均聚物和其特性粘度比在1.0〜3.0的范围内。

公开(公告)号：USD437205S1

公开(公告)日：2001-02-06

申请号：US29124464

申请日：2000-06-06

申请人： Yasuhiro Mochizuki

设计人： Yasuhiro Mochizuki

公开(公告)号：US5627387A

公开(公告)日：1997-05-06

申请号：US396259

申请日：1995-03-01

申请人： Susumu Murakami ,  Yoshiteru Shimizu ,  Takeshi Yokota ,  Yasuhiro Mochizuki

发明人： Susumu Murakami ,  Yoshiteru Shimizu ,  Takeshi Yokota ,  Yasuhiro Mochizuki

IPC分类号： H01L29/74 ,  H01L29/06 ,  H01L29/861 ,  H01L29/87

CPC分类号： H01L29/0626 ,  H01L29/7424 ,  H01L29/7428 ,  H01L29/87

摘要： A novel semiconductor device with a pair of main surfaces is disclosed, in which at least three semiconductor layers are formed adjacently to each other. The device comprises a main thyristor portion for supplying a main current, an auxiliary thyristor portion, a pilot thyristor portion and a breakover portion. The breakover portion, in turn, includes a semiconductor layer having a high impurities concentration formed on one of the main surfaces, and a plurality of semiconductor layers having a high impurities concentration of opposite conduction type formed adjacently to the semiconductor layer and in spaced relationship from each other.

摘要翻译： 公开了一种具有一对主表面的新型半导体器件，其中至少三个半导体层彼此相邻地形成。 该装置包括用于提供主电流的主晶闸管部分，辅助晶闸管部分，先导晶闸管部分和突破部分。 折叠部分又包括在主表面之一上形成的具有高杂质浓度的半导体层，以及与半导体层相邻形成的具有相反导电类型的高杂质浓度的多个半导体层， 彼此。