公开(公告)号：US07683414B2

公开(公告)日：2010-03-23

申请号：US11705349

申请日：2007-02-12

申请人： Takashi Nagano ,  Yasushi Morita

发明人： Takashi Nagano ,  Yasushi Morita

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L21/82385 ,  H01L21/823864 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/14689

摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etchingback the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.

摘要翻译： 本发明提出一种半导体器件及其制造方法及其电子设备，其中可以制造CMOS型固态成像器件，形成有LDD结构的MOS晶体管的成像器区域的半导体器件没有 具有难熔金属的金属硅化物层，DRAM单元的面积等形成单个半导体芯片。 根据本发明，半导体器件被构成为使用具有多个层的绝缘膜，在栅电极处的侧壁通过蚀刻多层绝缘膜或在单层膜的区域中形成单层膜来形成 形成金属硅化物层，并且在不形成金属硅化物层的区域中，在其表面被涂覆的下层绝缘膜上或多层的绝缘膜保持不变的情况下，形成由上层绝缘膜构成的侧壁。

公开(公告)号：US07235835B2

公开(公告)日：2007-06-26

申请号：US10483882

申请日：2003-05-14

申请人： Takashi Nagano ,  Yasushi Morita

发明人： Takashi Nagano ,  Yasushi Morita

IPC分类号： H01L21/8238

CPC分类号： H01L27/14609 ,  H01L21/82385 ,  H01L21/823864 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/14689

摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etching back the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.

摘要翻译： 本发明提出一种半导体器件及其制造方法及其电子设备，其中可以制造CMOS型固态成像器件，形成有LDD结构的MOS晶体管的成像器区域的半导体器件没有 具有难熔金属的金属硅化物层，DRAM单元的面积等形成单个半导体芯片。 根据本发明，半导体器件被构成为使用具有多个层的绝缘膜，通过蚀刻多个层的绝缘膜或在该区域中的单层膜来形成栅电极的侧壁 在形成金属硅化物层的地方，并且在未形成金属硅化物层的区域中，由上层绝缘膜构成的侧壁形成在其表面被涂覆的下层绝缘膜上，或者多层绝缘膜保持不变 。

公开(公告)号：US09748289B2

公开(公告)日：2017-08-29

申请号：US11705519

申请日：2007-02-12

申请人： Takashi Nagano ,  Yasushi Morita

发明人： Takashi Nagano ,  Yasushi Morita

IPC分类号： H01L21/8238 ,  H01L27/146 ,  H01L27/092 ,  H01L27/108

CPC分类号： H01L27/14609 ,  H01L21/82385 ,  H01L21/823864 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/14689

摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etchingback the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.

公开(公告)号：US07884407B2

公开(公告)日：2011-02-08

申请号：US12362346

申请日：2009-01-29

申请人： Takashi Nagano ,  Yasushi Morita

发明人： Takashi Nagano ,  Yasushi Morita

IPC分类号： H01L21/8238

CPC分类号： H01L27/14609 ,  H01L21/82385 ,  H01L21/823864 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/14689

摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etching back the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.

摘要翻译： 本发明提出一种半导体器件及其制造方法及其电子设备，其中可以制造CMOS型固态成像器件，形成有LDD结构的MOS晶体管的成像器区域的半导体器件没有 具有难熔金属的金属硅化物层，DRAM单元的面积等形成单个半导体芯片。 根据本发明，半导体器件被构成为使用具有多个层的绝缘膜，通过蚀刻多个层的绝缘膜或在该区域中的单层膜来形成栅电极的侧壁 在形成金属硅化物层的地方，并且在未形成金属硅化物层的区域中，由上层绝缘膜构成的侧壁形成在其表面被涂覆的下层绝缘膜上，或者多层绝缘膜保持不变 。

公开(公告)号：US20070141772A1

公开(公告)日：2007-06-21

申请号：US11705519

申请日：2007-02-12

申请人： Takashi Nagano ,  Yasushi Morita

发明人： Takashi Nagano ,  Yasushi Morita

IPC分类号： H01L21/8238

CPC分类号： H01L27/14609 ,  H01L21/82385 ,  H01L21/823864 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/14689

摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etchingback the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.

摘要翻译： 本发明提出一种半导体器件及其制造方法及其电子设备，其中可以制造CMOS型固态成像器件，形成有LDD结构的MOS晶体管的成像器区域的半导体器件没有 具有难熔金属的金属硅化物层，DRAM单元的面积等形成单个半导体芯片。 根据本发明，半导体器件被构成为使用具有多个层的绝缘膜，在栅电极处的侧壁通过蚀刻多层绝缘膜或在单层膜的区域中形成单层膜来形成 形成金属硅化物层，并且在不形成金属硅化物层的区域中，在其表面被涂覆的下层绝缘膜上或多层的绝缘膜保持不变的情况下，形成由上层绝缘膜构成的侧壁。

公开(公告)号：US20070138568A1

公开(公告)日：2007-06-21

申请号：US11705349

申请日：2007-02-12

申请人： Takashi Nagano ,  Yasushi Morita

发明人： Takashi Nagano ,  Yasushi Morita

IPC分类号： H01L29/94

CPC分类号： H01L27/14609 ,  H01L21/82385 ,  H01L21/823864 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/14689

摘要： The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etchingback the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged.

摘要翻译： 本发明提出一种半导体器件及其制造方法及其电子设备，其中可以制造CMOS型固态成像器件，形成有LDD结构的MOS晶体管的成像器区域的半导体器件没有 具有难熔金属的金属硅化物层，DRAM单元的面积等形成单个半导体芯片。 根据本发明，半导体器件被构成为使用具有多个层的绝缘膜，在栅电极处的侧壁通过蚀刻多层绝缘膜或在单层膜的区域中形成单层膜来形成 形成金属硅化物层，并且在不形成金属硅化物层的区域中，在其表面被涂覆的下层绝缘膜上或多层的绝缘膜保持不变的情况下，形成由上层绝缘膜构成的侧壁。

公开(公告)号：US08933437B2

公开(公告)日：2015-01-13

申请号：US13131003

申请日：2009-11-25

申请人： Yasushi Morita ,  Masaaki Yokoyama ,  Shozo Yanagida ,  Yoshihisa Tawada ,  Kenji Yamamoto ,  Ryotaro Tsuji

发明人： Yasushi Morita ,  Masaaki Yokoyama ,  Shozo Yanagida ,  Yoshihisa Tawada ,  Kenji Yamamoto ,  Ryotaro Tsuji

IPC分类号： H01L51/30 ,  H01L51/00 ,  H01L51/42 ,  H01L51/50

CPC分类号： H01L51/0056 ,  H01L51/424 ,  H01L51/5012 ,  H01L51/5048 ,  H01L51/5088 ,  Y02E10/549 ,  Y10S428/917

摘要： An organic semiconductor device according to the present invention includes a semiconductor layer 14 interposed between two electrodes 12 and 15, and the semiconductor layer 14 contains a trioxotriangulene (TOT) derivative, which is a neutral radical compound, as a semiconductor material. The semiconductor layer 14 acts as an n-type semiconductor and coacts with a p-type semiconductor layer 13 to exhibit a photoelectric conversion effect. The organic semiconductor device is characterized as including a semiconductor layer that has a narrow band gap, has light absorption performance in an infrared region, and is high in carrier mobility.

摘要翻译： 根据本发明的有机半导体器件包括插入在两个电极12和15之间的半导体层14，并且半导体层14包含作为半导体材料的作为中性自由基化合物的三氧化三三烯（TOT）衍生物。 半导体层14用作n型半导体并与p型半导体层13共同显示光电转换效果。 有机半导体器件的特征在于包括具有窄带隙的半导体层，在红外区域具有光吸收性能，并且载流子迁移率高。

公开(公告)号：US06869223B2

公开(公告)日：2005-03-22

申请号：US10208774

申请日：2002-08-01

申请人： Saburo Azumi ,  Yasushi Morita ,  Naoki Matsuyama ,  Takaaki Anzai

发明人： Saburo Azumi ,  Yasushi Morita ,  Naoki Matsuyama ,  Takaaki Anzai

IPC分类号： F16C35/12 ,  F16C33/58 ,  F16C33/66

CPC分类号： F16C33/58 ,  B23Q1/70 ,  B23Q11/123 ,  F16C19/163 ,  F16C19/26 ,  F16C19/28 ,  F16C33/6625 ,  F16C2322/39 ,  Y10T74/14 ,  Y10T409/303976 ,  Y10T409/309352

摘要： A grease-lubricated rolling bearing has an outer ring having an outer ring race in an inner peripheral surface thereof, an inner ring having an inner ring race on an outer peripheral surface thereof, rolling elements rollably provided between the outer ring race and the inner ring race, and a grease supply element for supplying an additional grease in the rolling bearing. The amount of the additional grease to be supplied at a time is predetermined to be from 0.1 to 4% of the volume of space in the bearing.

摘要翻译： 润滑脂润滑的滚动轴承具有在其内周面上具有外圈圈的外圈，在其外周面上具有内圈圈的内圈，可滚动地设置在外圈圈和内圈之间的滚动元件 以及用于在滚动轴承中供给另外的润滑脂的润滑脂供给元件。 一次供给的另外的润滑脂的量被预先确定为轴承的空间体积的0.1〜4％。

公开(公告)号：US4822823A

公开(公告)日：1989-04-18

申请号：US10534

申请日：1987-02-03

申请人： Yujiro Yamamoto ,  Hideo Terayama ,  Yasushi Morita

发明人： Yujiro Yamamoto ,  Hideo Terayama ,  Yasushi Morita

IPC分类号： A61K9/00 ,  A61K9/08 ,  A61K9/70 ,  A61K31/12 ,  A61K45/00 ,  A61K47/00 ,  A61K47/40 ,  A61P11/00 ,  A61P27/02 ,  A61P27/14 ,  A61P27/16 ,  A61P37/08 ,  A61P43/00 ,  C07C50/28

CPC分类号： A61K47/40 ,  A61K31/12 ,  A61K9/0043 ,  A61K9/0048 ,  A61K9/703 ,  A61K9/7084

摘要： This invention relates to an aqueous preparation comprising a compound (A) represented by the formula: ##STR1## and at least one of cyclodextrins selected from .alpha.-cyclodextrin and dimethyl-.beta.-cyclodextrin; and a method of preparation thereof.According to the aqueous preparation of this invention, coexistence with at least one medicament selected from .alpha.-cyclodextrin and dimethyl-.beta.-cyclodextrin allows to enhance the solubility to water of compound (A) essential in this invention to such a concentration that makes an expected curative effect available and to inpart a desired stability to it. As a consequence, the aforesaid compound (A) can be utilized as a medicament for an aqueous preparation having anti-allergy action.

摘要翻译： 本发明涉及含有由下式表示的化合物（A）的水性制剂和至少一种选自α-环糊精和二甲基-β-环糊精的环糊精; 及其制备方法。 根据本发明的水性制剂，与至少一种选自α-环糊精和二甲基-β-环糊精的药物共存允许增强本发明中必需的化合物（A）对水的溶解度，使其达到预期的浓度 可用的治疗效果和对其的期望的稳定性。 因此，上述化合物（A）可以用作具有抗过敏作用的水性制剂的药物。

公开(公告)号：US20120126206A1

公开(公告)日：2012-05-24

申请号：US13131003

申请日：2009-11-25

申请人： Yasushi Morita ,  Masaaki Yokoyama ,  Shozo Yanagida ,  Yoshihisa Tawada ,  Kenji Yamamoto ,  Ryotaro Tsuji

发明人： Yasushi Morita ,  Masaaki Yokoyama ,  Shozo Yanagida ,  Yoshihisa Tawada ,  Kenji Yamamoto ,  Ryotaro Tsuji

IPC分类号： H01L51/30

CPC分类号： H01L51/0056 ,  H01L51/424 ,  H01L51/5012 ,  H01L51/5048 ,  H01L51/5088 ,  Y02E10/549 ,  Y10S428/917

摘要： An organic semiconductor device according to the present invention includes a semiconductor layer 14 interposed between two electrodes 12 and 15, and the semiconductor layer 14 contains a trioxotriangulene (TOT) derivative, which is a neutral radical compound, as a semiconductor material. The semiconductor layer 14 acts as an n-type semiconductor and coacts with a p-type semiconductor layer 13 to exhibit a photoelectric conversion effect. The organic semiconductor device is characterized as including a semiconductor layer that has a narrow band gap, has light absorption performance in an infrared region, and is high in carrier mobility.

摘要翻译： 根据本发明的有机半导体器件包括插入在两个电极12和15之间的半导体层14，并且半导体层14包含作为半导体材料的作为中性自由基化合物的三氧化三三烯（TOT）衍生物。 半导体层14用作n型半导体并与p型半导体层13共同显示光电转换效果。 有机半导体器件的特征在于包括具有窄带隙的半导体层，在红外区域具有光吸收性能，并且载流子迁移率高。