TRANSISTOR AND PROCESS OF PRODUCING THE SAME, LIGHT-EMITTING DEVICE, AND DISPLAY
    1.
    发明申请
    TRANSISTOR AND PROCESS OF PRODUCING THE SAME, LIGHT-EMITTING DEVICE, AND DISPLAY 审中-公开
    晶体管及其制造方法,发光装置和显示器

    公开(公告)号:US20120112318A1

    公开(公告)日:2012-05-10

    申请号:US13351661

    申请日:2012-01-17

    IPC分类号: H01L29/73

    摘要: A transistor capable of modulating, at low voltages, a large current flowing between an emitter electrode and a collector electrode. A process of producing the transistor, a light-emitting device comprising the transistor, and a display comprising the transistor. The transistor comprises an emitter electrode and a collector electrode. Between the emitter electrode and the collector electrode are situated a semiconductor layer and a sheet base electrode. It is preferred that the semiconductor layer be situated between the emitter electrode and the base electrode and also between the collector electrode and the base electrode to constitute a second semiconductor layer and a first semiconductor layer, respectively. It is also preferred that the thickness of the base electrode be 80 nm or less. Furthermore, a dark current suppressor layer is situated at least between the emitter electrode and the base electrode, or between the collector electrode and the base electrode.

    摘要翻译: 能够在低电压下调制在发射电极和集电极之间流动的大电流的晶体管。 一种制造该晶体管的工艺,一种包括该晶体管的发光器件以及包括该晶体管的显示器。 晶体管包括发射极和集电极。 在发射电极和集电极之间设有半导体层和片状基极。 优选地,半导体层位于发射极和基极之间以及集电极和基极之间,分别构成第二半导体层和第一半导体层。 基极的厚度也优选为80nm以下。 此外,暗电流抑制层至少位于发射电极和基极之间,或集电极与基极之间。

    Patterned Substrate and Method for Producing Same
    2.
    发明申请
    Patterned Substrate and Method for Producing Same 审中-公开
    图案基板及其制作方法

    公开(公告)号:US20080241484A1

    公开(公告)日:2008-10-02

    申请号:US10594840

    申请日:2005-03-30

    IPC分类号: B32B3/00 G03F7/26

    摘要: Disclosed is a patterned substrate having a conductor pattern. The conductor pattern is obtained by forming a layer (B) containing an organic polysilane on a conductive substrate (A), irradiating a certain region of the layer (B) with a radiation for oxidizing the organic polysilane constituting the layer (B) in the certain region, and then applying a solution containing a conducting polymer, water and/or a hydrophilic solvent over at least the certain region of the layer (B) for forming a layer (C) composed of the conducting polymer while impregnating the layer (B) in the certain region with the conducting polymer for electrically connecting the layer (C) and the substrate (A).

    摘要翻译: 公开了具有导体图案的图案化衬底。 导体图案通过在导电性基板(A)上形成含有有机聚硅烷的层(B)而得到,在层(B)的某一区域照射用于氧化构成层(B)的有机聚硅烷的辐射 然后在至少所述层(B)的某一区域内施加含有导电聚合物,水和/或亲水性溶剂的溶液,以形成由导电聚合物构成的层(C),同时浸渍所述层(B )与导电聚合物电连接在层(C)和基板(A)之间。

    Organic Semiconductor Film, Electron Device Using the Same and Manufacturing Method Therefor
    3.
    发明申请
    Organic Semiconductor Film, Electron Device Using the Same and Manufacturing Method Therefor 审中-公开
    有机半导体膜,使用其的电子器件及其制造方法

    公开(公告)号:US20080217604A1

    公开(公告)日:2008-09-11

    申请号:US10568934

    申请日:2004-08-25

    IPC分类号: H01L51/00 H01L51/40

    摘要: An organic semiconductor film that can be used for an electron device, for example, particularly can be used for organic TFTs so as to allow the TFTs to have advanced performance, is provided and a manufacturing method therefor is provided. For instance, the organic semiconductor film contains the organic conductive high polymer compound such as polythiophene represented by the below formula (I). The organic semiconductor film is formed by forming a solution in a thin film form, the solution showing two or more spectral peaks (spectral state B) in a wavelength region of 300 to 800 nm by measurement using a visible and ultraviolet absorption spectral method; and drying the solution formed in the thin film form. Alternatively, the organic semiconductor film can be formed by the method in which the organic conductive high polymer compound has a molecular weight distribution range Mw/Mn from 1.00 to 1.85, obtained by dividing a weight-average molecular weight Mw by a number-average molecular weight Mn. With these methods, principal chains of the organic conductive high polymer compound molecules are arranged substantially in parallel, thus enhancing carrier mobility.

    摘要翻译: 可以使用可用于电子器件的有机半导体膜,特别是可以用于有机TFT,以便允许TFT具有先进的性能,并提供其制造方法。 例如,有机半导体膜含有由下式(I)表示的聚噻吩等有机导电性高分子化合物。 通过使用可见光和紫外吸收光谱法测量,通过形成薄膜形式的溶液形成有机半导体膜,所述溶液在300至800nm的波长范围内显示两个或更多个光谱峰(光谱状态B); 并干燥形成薄膜形式的溶液。 或者,有机半导体膜可以通过以下方法形成:其中有机导电性高分子化合物的分子量分布范围为1.00〜1.85的Mw / Mn,通过将重均分子量Mw除以数均分子量 重量Mn。 通过这些方法,有机导电性高分子化合物分子的主链基本上平行布置,从而提高载流子迁移率。

    Polyolefin resin molding composite
    5.
    发明授权
    Polyolefin resin molding composite 有权
    聚烯烃树脂成型复合材料

    公开(公告)号:US06815051B2

    公开(公告)日:2004-11-09

    申请号:US09839716

    申请日:2001-04-20

    IPC分类号: B32B326

    摘要: A foam layer can be formed at a temperature at which the surface quality of a surface layer is not deteriorated, and a molding technique that is excellent in adhesiveness of a foam layer and a surface layer or/and a base member is developed. For the purpose of obtaining a resin molding composite, the present invention is characterized by a polyolefin resin molding composite comprising a surface layer and a foam layer, or a surface layer, a foam layer, and a base member, wherein the foam layer comprises a foam layer produced by fusion bonding thermoplastic expanded resin particles one another by molding, where the thermoplastic expanded resin particles comprises a core that is made of a crystalline thermoplastic resin and is in an expanded state and a polyethylene resin coat covering the core, and the surface layer comprises a thermoplastic synthetic resin having a melting point of 5° C. or more higher than a melting point of polyethylene resin constituting the coat of the particles.

    摘要翻译: 可以在表面层的表面质量不劣化的温度下形成发泡层,并且开发出泡沫层和表面层或/和基底构件的粘合性优异的成型技术。 为了获得树脂模塑复合材料,本发明的特征在于包括表面层和泡沫层或表面层,泡沫层和基底构件的聚烯烃树脂模制复合材料,其中泡沫层包括 通过模塑将热塑性膨胀树脂颗粒彼此熔合而制得的泡沫层,其中热塑性膨胀树脂颗粒包含由结晶热塑性树脂制成并处于膨胀状态的芯和覆盖芯的聚乙烯树脂涂层,表面 层包含熔点为5℃以上的热塑性合成树脂,或高于构成颗粒层的聚乙烯树脂的熔点。

    Numerical control apparatus for machine tool
    6.
    发明授权
    Numerical control apparatus for machine tool 失效
    机床数控机床

    公开(公告)号:US06605915B2

    公开(公告)日:2003-08-12

    申请号:US09987581

    申请日:2001-11-15

    IPC分类号: B23B1902

    摘要: The present invention provides a numerical control apparatus for a machine tool, which corrects an axial displacement of a main spindle caused due to a change in preload level and occurring according to the rotation speed of the main spindle. The numerical control apparatus (3) comprises: a numerical control section (6) for numerically controlling the movement of a spindle head (2) and for outputting a rotation command; a spindle control section (7) for controlling the rotation of a main spindle (5); a preload change control section (8) for changing the level of a preload applied to bearings (36, 37); and a correcting section (9) for outputting correction data for correction of an axial displacement of the main spindle (5) caused due to a change in the preload level and occurring according to the rotation speed of the main spindle (5) to the numerical control section (6) on the basis of the rotation command.

    摘要翻译: 本发明提供一种用于机床的数值控制装置,其校正由于预负载水平的变化而引起的主轴的轴向位移,并且根据主轴的转速发生。 数控装置(3)包括:数字控制部(6),用于数字控制主轴头(2)的移动并输出旋转指令; 主轴控制部(7),用于控制主轴(5)的旋转; 用于改变施加到轴承(36,37)的预加载水平的预加载变化控制部分(8); 以及校正部(9),用于输出用于校正由于预负载水平的变化引起的主轴(5)的轴向位移的校正数据,并且根据主轴(5)的转速发生到数值 控制部(6)。

    Cephalosporin compounds
    9.
    发明授权
    Cephalosporin compounds 失效
    头孢菌素化合物

    公开(公告)号:US4691014A

    公开(公告)日:1987-09-01

    申请号:US782567

    申请日:1985-10-01

    CPC分类号: C07D263/48 Y02P20/55

    摘要: A cephalosporin compound having the formula: ##STR1## wherein R.sub.1 is a hydroxy group, a lower alkanoyloxy group or a lower alkoxycarbonyloxy group, R.sub.2 is a hydrogen atom, a hydroxy group, a lower alkanoyloxy group or a lower alkoxycarbonyloxy group, R.sub.3 is a hydrogen atom, a halogen atom, a lower alkyl group, a lower alkenyl group, a lower alkoxy group or --CH.sub.2 R.sub.7 (wherein R.sub.7 is a hydrogen atom, an azido group, a lower alkanoyloxy group, a carbamoyloxy group, a substituted or unsubstituted pyridinium group or a substituted or unsubstituted heterocyclic thio group), R.sub.4 is a hydrogen atom or a carboxy-protecting group, each of R.sub.5 and R.sub.6 is a hydrogen atom or a lower alkyl group, or R.sub.5 and R.sub.6 form a cycloalkylidene group together with the carbon atom to which they are attached, and m is 0 to 1, or a pharmaceutically acceptable salt thereof.

    摘要翻译: 具有下式的头孢菌素化合物:其中R1是羟基,低级烷酰氧基或低级烷氧基羰基氧基,R2是氢原子,羟基,低级烷酰氧基或低级烷氧羰基氧基, R3是氢原子,卤素原子,低级烷基,低级烯基,低级烷氧基或-CH2R7(其中R7是氢原子,叠氮基,低级烷酰氧基,氨基甲酰氧基,取代的 或未取代的吡啶鎓基或取代或未取代的杂环硫基),R 4为氢原子或羧基保护基,R 5和R 6各自为氢原子或低级烷基,或者R 5和R 6一起形成亚环烷基 与其连接的碳原子,m为0-1,或其药学上可接受的盐。