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1.发明申请HIGH FREQUENCY CABLE, HIGH FREQUENCY COIL AND METHOD FOR MANUFACTURING HIGH FREQUENCY CABLE 审中-公开高频电缆，高频线圈及制造高频电缆的方法公开(公告)号：US20150013153A1
公开(公告)日：2015-01-15
申请号：US14336507
申请日：2014-07-21
申请人： Takashi SHINMOTO , Shotaro YOSHIDA , Shinji KATAYAMA , Taikou TODA , Takamasa KATO , Masanori DAIBO , Akio KAWAKAWI
发明人： Takashi SHINMOTO , Shotaro YOSHIDA , Shinji KATAYAMA , Taikou TODA , Takamasa KATO , Masanori DAIBO , Akio KAWAKAWI
CPC分类号： H01B13/0006 , B21C1/003 , B21C3/04 , B23K20/001 , B23K20/2333 , B32B15/01 , C22C9/00 , C22C21/00 , C23C28/023 , H01B1/023 , H01B1/026 , H01B5/02 , H01B7/30 , H01F27/2823 , Y10T29/49117
摘要： A high frequency cable includes: a central conductor made from aluminum or an aluminum alloy; a covering layer made from copper covering the central conductor, and having a fiber-like structure in a longitudinal direction; and an intermetallic compound layer formed between the central conductor and the covering layer and having greater volume resistivity than the covering layer, wherein a cross-sectional area of the covering layer is 15% or less of an entire cross-sectional area including the central conductor, the intermetallic compound layer and the covering layer.
摘要翻译： 高频电缆包括：由铝或铝合金制成的中心导体; 由覆盖中心导体的铜制成的覆盖层，沿纵向具有纤维状结构; 以及形成在中心导体和覆盖层之间并且具有比覆盖层更大的体积电阻率的金属间化合物层，其中覆盖层的横截面积为包括中心导体的整个横截面积的15％或更小 ，金属间化合物层和覆盖层。
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2.发明申请公开(公告)号：US20130014973A1
公开(公告)日：2013-01-17
申请号：US13624395
申请日：2012-09-21
申请人： Takashi SHINMOTO , Shotaro YOSHIDA , Shinji KATAYAMA , Taikou TODA , Takamasa KATO , Masanori DAIBO , Akio KAWAKAMI
发明人： Takashi SHINMOTO , Shotaro YOSHIDA , Shinji KATAYAMA , Taikou TODA , Takamasa KATO , Masanori DAIBO , Akio KAWAKAMI
CPC分类号： H01B13/0006 , B21C1/003 , B21C3/04 , B23K20/001 , B23K20/2333 , B32B15/01 , C22C9/00 , C22C21/00 , C23C28/023 , H01B1/023 , H01B1/026 , H01B5/02 , H01B7/30 , H01F27/2823 , Y10T29/49117
摘要： A high frequency cable includes: a central conductor made from aluminum or an aluminum alloy; a covering layer made from copper covering the central conductor, and having a fiber-like structure in a longitudinal direction; and an intermetallic compound layer formed between the central conductor and the covering layer and having greater volume resistivity than the covering layer, wherein a cross-sectional area of the covering layer is 15% or less of an entire cross-sectional area including the central conductor, the intermetallic compound layer and the covering layer.
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