公开(公告)号：US20070230530A1

公开(公告)日：2007-10-04

申请号：US11567396

申请日：2006-12-06

Applicant: Takayuki KASHIMA ,  Kuoji MAKITA ,  Kenji YOSHIKAWA

Inventor： Takayuki KASHIMA ,  Kuoji MAKITA ,  Kenji YOSHIKAWA

IPC: H01S5/00

CPC classification number: H01S5/22 ,  H01S5/305

Abstract: A semiconductor laser device including the following: a first conductivity type semiconductor substrate; a first conductivity type cladding layer disposed on the semiconductor substrate; an active layer disposed on the first conductivity type cladding layer; a second conductivity type first cladding layer disposed on the active layer; a second conductivity type second cladding layer that is disposed on the second conductivity type first cladding layer and forms a ridge waveguide extending in a resonator direction; a second conductivity type contact layer disposed on the second conductivity type second cladding layer; and an end face window structure in which impurities are diffused into an active layer region of an end face portion in the resonator direction. Thus a band gap is enlarged compared to a gain region that is a portion other than the end face portion. In the second conductivity type first and second cladding layers, an impurity concentration in the gain region is the same as or larger than that in a region of the end face window structure. This configuration can form an end face window structure with a smaller refractive index variation, achieve a higher resistance than a conventional window structure, and control Zn diffusion in the resonator direction.

Abstract translation: 一种半导体激光器件，包括：第一导电型半导体衬底; 设置在半导体衬底上的第一导电型包层; 设置在所述第一导电型包覆层上的有源层; 设置在有源层上的第二导电型第一包层; 第二导电型第二包覆层，其设置在第二导电型第一包层上并形成沿谐振器方向延伸的脊状波导; 第二导电型接触层，设置在第二导电类型的第二包层上; 以及其中杂质扩散到谐振器方向上的端面部分的有源层区域中的端面窗结构。 因此，与作为端面部以外的部分的增益区域相比，带隙增大。 在第二导电类型的第一和第二包覆层中，增益区域中的杂质浓度与端面窗结构的区域中的杂质浓度相同或者更大。 这种构造可以形成具有较小折射率变化的端面窗结构，实现比常规窗结构更高的电阻，并且控制谐振器方向上的Zn扩散。

公开(公告)号：US20120217903A1

公开(公告)日：2012-08-30

申请号：US13368435

申请日：2012-02-08

Applicant: Hirofumi TANAKA ,  Kazuo YAMAMOTO ,  Nobuyuki HARUNA ,  Yuehu PU ,  Kanji SHINKAWA ,  Takayuki KASHIMA

Inventor： Hirofumi TANAKA ,  Kazuo YAMAMOTO ,  Nobuyuki HARUNA ,  Yuehu PU ,  Kanji SHINKAWA ,  Takayuki KASHIMA

IPC: H05H13/08

CPC classification number: H05H13/005 ,  H05H7/12 ,  H05H13/02

Abstract: The circular accelerator comprises: a bending electromagnet that generates a bending magnetic field; a radio-frequency power source that generates a radio-frequency electric field in accordance with an orbital frequency of charged particles; a radio-frequency electromagnetic field coupling part connected to the radio-frequency power source; an acceleration electrode connected to the radio-frequency electromagnetic field coupling part; and an acceleration-electrode-opposing ground plate provided to form an acceleration gap between the plate itself and the acceleration electrode, for generating the radio-frequency electromagnetic field in an orbiting direction of the charged particles; wherein the bending electromagnet generates the bending magnetic field varying in such a way that the orbital frequency of the charged particles varies in a variation range of 0.7% to 24.7% with respect to an orbital frequency at the charged-particles' extraction portion, during a time of injection to extraction of the particles.

Abstract translation: 圆形加速器包括：产生弯曲磁场的弯曲电磁体; 射频电源，其根据带电粒子的轨道频率产生射频电场; 连接到所述射频电源的射频电磁场耦合部; 连接到射频电磁场耦合部分的加速电极; 以及加速电极对置的接地板，其设置成在板本身和加速电极之间形成加速间隙，用于在带电粒子的运动方向上产生射频电磁场; 其中所述弯曲电磁体产生所述弯曲磁场，所述弯曲磁场以使得所述带电粒子的轨道频率相对于所述带电粒子提取部分的轨道频率在0.7％至24.7％的变化范围内变化的方式变化， 注射时间来提取颗粒。

公开(公告)号：US20090053838A1

公开(公告)日：2009-02-26

申请号：US12196902

申请日：2008-08-22

Applicant: Takayuki KASHIMA ,  Keiji ITO ,  Kouji MAKITA

Inventor： Takayuki KASHIMA ,  Keiji ITO ,  Kouji MAKITA

IPC: H01L21/02

CPC classification number: H01S5/4025 ,  H01S5/0201 ,  H01S5/2201

Abstract: A first conductivity type cladding layer, an active layer, a second conductivity type first cladding layer, and a second conductivity type second cladding layer are laminated in this order on a semiconductor substrate by crystal growth. The second conductivity type second cladding layer is processed into a plurality of stripe-shaped ridge structure portions, and a laser bar is formed by cleavage in a direction orthogonal to a longitudinal direction of the ridge structure portions. A plurality of columns of the ridge structure portions that are aligned in the longitudinal direction of the ridge structure portions at predetermined intervals are arranged. The arrangement is such that each of the columns is displaced from the adjacent column in the longitudinal direction of the ridge structure portions so that an end portion of each of the ridge structure portions and an end portion of the adjacent ridge structure portion overlap each other in the longitudinal direction of the ridge structure portions. A region where the end portion of each of the ridge structure portions and the end portion of the adjacent ridge structure portion overlap each other is cleaved. According to this method, it is possible to provide a method for manufacturing a semiconductor laser device and a method for inspecting a semiconductor laser bar in the manufacturing process, capable of determining for each chip whether or not a deviation of the resonator length is within the tolerance in a simple manner.

Abstract translation: 依次通过晶体生长将第一导电型包覆层，有源层，第二导电型第一包层和第二导电型第二包覆层依次层叠。 将第二导电型第二包覆层加工成多个条状的脊状结构部，通过在与脊部结构部的长度方向正交的方向上断裂而形成激光条。 布置有以脊部结构部分的纵向方向以预定间隔对齐的多个脊状结构部分的列。 这样的布置使得每个列在脊结构部分的纵向方向上从相邻列移位，使得每个脊结构部分的端部和相邻脊结构部分的端部彼此重叠 脊结构部分的纵向方向。 其中每个脊结构部分的端部和相邻脊部结构部分的端部彼此重叠的区域被切割。 根据该方法，可以提供一种制造半导体激光器件的方法和用于在制造过程中检查半导体激光棒的方法，该方法能够确定每个芯片的谐振器长度的偏差是否在 容忍以简单的方式。

公开(公告)号：US20090086782A1

公开(公告)日：2009-04-02

申请号：US12235320

申请日：2008-09-22

Applicant: Takeshi YOKOYAMA ,  Takayuki KASHIMA ,  Kouji MAKITA

Inventor： Takeshi YOKOYAMA ,  Takayuki KASHIMA ,  Kouji MAKITA

IPC: H01S5/026 ,  H01S5/20 ,  H01L21/02

CPC classification number: H01S5/162 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/32316 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

Abstract: On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure and first upper cladding layers 5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure 20 is formed so as to have a second lower cladding layer 13, a second active layer 14 with a second quantum well structure and a second upper cladding layer 15, 17, which are layered in this order, thereby forming a second resonator. End face coating films 31, 32 are formed on facets of the first and the second resonators, and a nitrogen-containing layer 30 is formed between the facets of the first and the second resonators and the facet coating film. In the semiconductor laser device provided with a high-output dual-wavelength lasers that are formed monolithically, the decrease of the COD level during the high-output operation of the laser can be suppressed.

Abstract translation: 在作为半导体基板1的一个主面的一部分的第一区域上，形成第一半导体激光结构体10，具有第一下部包层3，具有第一量子阱结构的第一有源层4和第一 上覆层5,7，其从半导体衬底侧依次层叠，从而形成第一谐振器。 在与第一区域不同的第二区域上形成第二半导体激光器结构20，以具有第二下部包层13，具有第二量子阱结构的第二有源层14和第二上部包层15， 17，其按顺序分层，从而形成第二谐振器。 端面涂膜31,32形成在第一和第二谐振器的小面上，并且在第一和第二谐振器的小面和小面涂膜之间形成含氮层30。 在具有单片形成的高输出双波长激光器的半导体激光装置中，能够抑制激光器的高输出运转时的COD电平的降低。