公开(公告)号：US08535932B2

公开(公告)日：2013-09-17

申请号：US13058366

申请日：2009-08-11

Applicant: Satoshi Araki ,  Munekazu Ogawa ,  Takayuki Kashima

Inventor： Satoshi Araki ,  Munekazu Ogawa ,  Takayuki Kashima

IPC: C12N1/20

CPC classification number: C12R1/645 ,  A01N63/04

Abstract: A microbial pesticide which is safe for the environment, fast-acting and excellent in an insecticidal effect in case of spray treatment for eggs and larvae of a pest is required. The invention provides a method for controlling at least one pest selected from the group consisting of whiteflies, aphid, spider mites, thrips, rust mites, leaf miners, pyralidae, cabbage moths and longhorn beetles, with Lecanicillium muscarium strain V-5 (deposition number: FERM BP-11135); and a microbial pesticide comprising the strain.

Abstract translation: 需要对环境安全的微生物杀虫剂，对于有害生物的卵和幼虫进行喷雾处理时，其作用速度快，杀虫效果优异。 本发明提供一种控制至少一种害虫的方法，所述害虫选自粉虱，蚜虫，蜘蛛螨，蓟马，铁锈螨，叶螨，螟蛾科，白菜蛾和长角甲虫，其具有Lecanicillium muscarium菌株V-5（保藏号 ：FERM BP-11135）; 和包含该菌株的微生物农药。

公开(公告)号：US07585689B2

公开(公告)日：2009-09-08

申请号：US12196902

申请日：2008-08-22

Applicant: Takayuki Kashima ,  Keiji Ito ,  Kouji Makita

Inventor： Takayuki Kashima ,  Keiji Ito ,  Kouji Makita

IPC: H01L21/00

CPC classification number: H01S5/4025 ,  H01S5/0201 ,  H01S5/2201

Abstract: A method for manufacturing a semiconductor laser device in which a first conductivity type cladding layer, and active layer, a second conductivity type first cladding layer, and a second conductivity type second cladding layer are laminated in this order on a semiconductor substrate by crystal growth, the second conductivity type second cladding layer is processed into a plurality of stripe-shaped ridge structure portions, and a laser bar is formed by cleavage in a direction orthogonal to a longitudinal direction of the ridge structure portions. According to this method, it is possible to provide a method for manufacturing a semiconductor laser device and a method for inspecting a semiconductor laser bar in the manufacturing process, capable of determining for each chip whether or not a deviation of a resonator length is within the tolerance in a simple manner.

Abstract translation: 一种半导体激光器件的制造方法，其中通过晶体生长在半导体衬底上依次层叠第一导电型包覆层和有源层，第二导电型第一包层和第二导电型第二包覆层， 将第二导电型第二包覆层加工成多个条状的脊状结构部，通过在与脊部结构部的长度方向正交的方向上断裂而形成激光条。 根据该方法，可以提供一种制造半导体激光器件的方法和用于在制造过程中检查半导体激光棒的方法，其能够确定每个芯片是否谐振器长度的偏差是否在 容忍以简单的方式。

公开(公告)号：US20090080483A1

公开(公告)日：2009-03-26

申请号：US12166688

申请日：2008-07-02

Applicant: Takayuki Kashima ,  Kouji Makita ,  Kenji Yoshikawa

Inventor： Takayuki Kashima ,  Kouji Makita ,  Kenji Yoshikawa

IPC: H01S5/42 ,  H01S5/00 ,  H01L21/02

CPC classification number: H01S5/4031 ,  B82Y20/00 ,  H01S5/162 ,  H01S5/22 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4087 ,  H01S2301/173

Abstract: A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element. The first semiconductor laser element has a first end face window structure that is a region including first impurities formed near an end face, and the second semiconductor laser element has a second end face window structure that is a region including second impurities formed near an end face. The distance from a lower end of a first active layer to a lower end of the first end face window structure is shorter than the distance from a lower end of a second active layer to a lower end of the second end face window structure.

Abstract translation: 半导体激光装置包括第一半导体激光元件和第二半导体激光元件。 第一半导体激光元件具有第一端面窗结构，该第一端面窗结构是包括在端面附近形成的第一杂质的区域，第二半导体激光元件具有第二端面窗结构，该第二端面窗结构是包括形成在端面附近的第二杂质的区域 。 从第一有源层的下端到第一端面窗结构的下端的距离比从第二活性层的下端到第二端面窗结构的下端的距离短。

公开(公告)号：US20090053838A1

公开(公告)日：2009-02-26

申请号：US12196902

申请日：2008-08-22

Applicant: Takayuki KASHIMA ,  Keiji ITO ,  Kouji MAKITA

Inventor： Takayuki KASHIMA ,  Keiji ITO ,  Kouji MAKITA

IPC: H01L21/02

CPC classification number: H01S5/4025 ,  H01S5/0201 ,  H01S5/2201

Abstract: A first conductivity type cladding layer, an active layer, a second conductivity type first cladding layer, and a second conductivity type second cladding layer are laminated in this order on a semiconductor substrate by crystal growth. The second conductivity type second cladding layer is processed into a plurality of stripe-shaped ridge structure portions, and a laser bar is formed by cleavage in a direction orthogonal to a longitudinal direction of the ridge structure portions. A plurality of columns of the ridge structure portions that are aligned in the longitudinal direction of the ridge structure portions at predetermined intervals are arranged. The arrangement is such that each of the columns is displaced from the adjacent column in the longitudinal direction of the ridge structure portions so that an end portion of each of the ridge structure portions and an end portion of the adjacent ridge structure portion overlap each other in the longitudinal direction of the ridge structure portions. A region where the end portion of each of the ridge structure portions and the end portion of the adjacent ridge structure portion overlap each other is cleaved. According to this method, it is possible to provide a method for manufacturing a semiconductor laser device and a method for inspecting a semiconductor laser bar in the manufacturing process, capable of determining for each chip whether or not a deviation of the resonator length is within the tolerance in a simple manner.

Abstract translation: 依次通过晶体生长将第一导电型包覆层，有源层，第二导电型第一包层和第二导电型第二包覆层依次层叠。 将第二导电型第二包覆层加工成多个条状的脊状结构部，通过在与脊部结构部的长度方向正交的方向上断裂而形成激光条。 布置有以脊部结构部分的纵向方向以预定间隔对齐的多个脊状结构部分的列。 这样的布置使得每个列在脊结构部分的纵向方向上从相邻列移位，使得每个脊结构部分的端部和相邻脊结构部分的端部彼此重叠 脊结构部分的纵向方向。 其中每个脊结构部分的端部和相邻脊部结构部分的端部彼此重叠的区域被切割。 根据该方法，可以提供一种制造半导体激光器件的方法和用于在制造过程中检查半导体激光棒的方法，该方法能够确定每个芯片的谐振器长度的偏差是否在 容忍以简单的方式。

公开(公告)号：US20050117619A1

公开(公告)日：2005-06-02

申请号：US10994436

申请日：2004-11-23

Applicant: Kouji Makita ,  Kenji Yoshikawa ,  Takayuki Kashima ,  Hideto Adachi

Inventor： Kouji Makita ,  Kenji Yoshikawa ,  Takayuki Kashima ,  Hideto Adachi

IPC: H01S5/30 ,  H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323

CPC classification number: H01S5/22 ,  H01S5/0425 ,  H01S5/222 ,  H01S5/32325

Abstract: The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic, and is comprised of the following: an n-type GaAs substrate 101; an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101; a non-doped quantum well active layer 103; a p-type AlGaInP first cladding layer 104; a p-type GaInP etching stop layer 105; a p-type AlGaInP second cladding layer 106; a p-type GaInP cap layer 107; a p-type GaAs contact layer 108; an n-type AlInP block layer 109, has a ridge portion and convex portions formed on the both sides of the ridge portion, and the p-type GaAs contact layer 108 is formed on the ridge portion only.

Abstract translation: 本发明旨在提供一种具有容易制造，令人满意的温度特性以及高速响应特性的结构的半导体激光器件，它包括：n型GaAs衬底101; 形成在n型GaAs衬底101上的n型AlGaInP包层102; 非掺杂量子阱有源层103; p型AlGaInP第一包覆层104; p型GaInP蚀刻停止层105; p型AlGaInP第二包覆层106; p型GaInP覆盖层107; p型GaAs接触层108; n型AlInP阻挡层109具有形成在脊部两侧的脊部和凸部，并且p型GaAs接触层108仅形成在脊部上。

公开(公告)号：US5225660A

公开(公告)日：1993-07-06

申请号：US556096

申请日：1990-07-23

Applicant: Tsuneo Mita ,  Tsuneo Shinada ,  Takayuki Kashima

Inventor： Tsuneo Mita ,  Tsuneo Shinada ,  Takayuki Kashima

IPC: B23K9/09 ,  B23K9/095 ,  G05F1/08

CPC classification number: B23K9/0953 ,  B23K9/091 ,  G05F1/08

Abstract: In a consumable electrode gas shielded arc welding system, alternating current power is applied across the electrode and the base metal. The period during which the electrode is kept negative is varied to correspond to the electrode feeding rate. In addition, the levels of the output power during the negative and positive periods are individually set.

Abstract translation: 在消耗电极气体保护电弧焊接系统中，跨越电极和母体金属施加交流电力。 电极保持为负的期间根据电极进给速度而变化。 另外，在负和正期间的输出功率的电平分别设定。

公开(公告)号：US07418019B2

公开(公告)日：2008-08-26

申请号：US11501064

申请日：2006-08-09

Applicant: Toru Takayama ,  Isao Kidoguchi ,  Takayuki Kashima

Inventor： Toru Takayama ,  Isao Kidoguchi ,  Takayuki Kashima

IPC: H01S5/00

CPC classification number: H01S5/40 ,  H01S5/162 ,  H01S5/22 ,  H01S5/4087

Abstract: Semiconductor lasers for respective wavelengths have window regions with different lengths so as to obtain optimum FFPs for emitted light of the respective wavelengths, and thus dependence on optical output can be equal between the wavelengths, facilitating the design of an optical system.

Abstract translation: 用于各波长的半导体激光器具有不同长度的窗口区域，以获得用于各个波长的发射光的最佳FFP，因此对波长的依赖性可以相等于波长，从而有助于光学系统的设计。

公开(公告)号：US20070237199A1

公开(公告)日：2007-10-11

申请号：US11390426

申请日：2006-03-28

Applicant: Takayuki Kashima ,  Kouji Makita ,  Kenji Yoshikawa

Inventor： Takayuki Kashima ,  Kouji Makita ,  Kenji Yoshikawa

IPC: H01S5/00

CPC classification number: H01S5/162 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

Abstract: In a monolithic dual-laser semiconductor laser device capable of high power output, a window structure for each of laser elements is formed through a common step, thereby improving the device reliability. The semiconductor laser device has an infrared laser element 110 and a red laser element 120 monolithically integrated on an n-type semiconductor substrate 101. Each of the infrared and red laser elements 110 and 120 has a ridged waveguide and a window structure formed by Zn diffusion at each resonator facet. The infrared and red laser elements 110 and 120 include p-type contact layers 109 and 119 on the ridges of the respective waveguides. The p-type contact layer 109 is thinner than the p-type contact layer 119.

Abstract translation: 在能够实现高功率输出的单片双激光半导体激光器件中，通过共同的步骤形成每个激光元件的窗口结构，从而提高器件的可靠性。 半导体激光装置具有红外激光元件110和单片集成在n型半导体基板101上的红色激光元件120。 红外线和红色激光元件110和120中的每一个具有脊状波导和在每个谐振器面处由Zn扩散形成的窗口结构。 红外线和红色激光元件110和120在相应波导的脊上包括p型接触层109和119。 p型接触层109比p型接触层119薄。

公开(公告)号：US20070230530A1

公开(公告)日：2007-10-04

申请号：US11567396

申请日：2006-12-06

Applicant: Takayuki KASHIMA ,  Kuoji MAKITA ,  Kenji YOSHIKAWA

Inventor： Takayuki KASHIMA ,  Kuoji MAKITA ,  Kenji YOSHIKAWA

IPC: H01S5/00

CPC classification number: H01S5/22 ,  H01S5/305

Abstract: A semiconductor laser device including the following: a first conductivity type semiconductor substrate; a first conductivity type cladding layer disposed on the semiconductor substrate; an active layer disposed on the first conductivity type cladding layer; a second conductivity type first cladding layer disposed on the active layer; a second conductivity type second cladding layer that is disposed on the second conductivity type first cladding layer and forms a ridge waveguide extending in a resonator direction; a second conductivity type contact layer disposed on the second conductivity type second cladding layer; and an end face window structure in which impurities are diffused into an active layer region of an end face portion in the resonator direction. Thus a band gap is enlarged compared to a gain region that is a portion other than the end face portion. In the second conductivity type first and second cladding layers, an impurity concentration in the gain region is the same as or larger than that in a region of the end face window structure. This configuration can form an end face window structure with a smaller refractive index variation, achieve a higher resistance than a conventional window structure, and control Zn diffusion in the resonator direction.

Abstract translation: 一种半导体激光器件，包括：第一导电型半导体衬底; 设置在半导体衬底上的第一导电型包层; 设置在所述第一导电型包覆层上的有源层; 设置在有源层上的第二导电型第一包层; 第二导电型第二包覆层，其设置在第二导电型第一包层上并形成沿谐振器方向延伸的脊状波导; 第二导电型接触层，设置在第二导电类型的第二包层上; 以及其中杂质扩散到谐振器方向上的端面部分的有源层区域中的端面窗结构。 因此，与作为端面部以外的部分的增益区域相比，带隙增大。 在第二导电类型的第一和第二包覆层中，增益区域中的杂质浓度与端面窗结构的区域中的杂质浓度相同或者更大。 这种构造可以形成具有较小折射率变化的端面窗结构，实现比常规窗结构更高的电阻，并且控制谐振器方向上的Zn扩散。

公开(公告)号：US08525448B2

公开(公告)日：2013-09-03

申请号：US13368435

申请日：2012-02-08

Applicant: Hirofumi Tanaka ,  Kazuo Yamamoto ,  Nobuyuki Haruna ,  Yuehu Pu ,  Kanji Shinkawa ,  Takayuki Kashima

Inventor： Hirofumi Tanaka ,  Kazuo Yamamoto ,  Nobuyuki Haruna ,  Yuehu Pu ,  Kanji Shinkawa ,  Takayuki Kashima

IPC: H05H13/00

CPC classification number: H05H13/005 ,  H05H7/12 ,  H05H13/02

Abstract: The circular accelerator comprises: a bending electromagnet that generates a bending magnetic field; a radio-frequency power source that generates a radio-frequency electric field in accordance with an orbital frequency of charged particles; a radio-frequency electromagnetic field coupling part connected to the radio-frequency power source; an acceleration electrode connected to the radio-frequency electromagnetic field coupling part; and an acceleration-electrode-opposing ground plate provided to form an acceleration gap between the plate itself and the acceleration electrode, for generating the radio-frequency electromagnetic field in an orbiting direction of the charged particles; wherein the bending electromagnet generates the bending magnetic field varying in such a way that the orbital frequency of the charged particles varies in a variation range of 0.7% to 24.7% with respect to an orbital frequency at the charged-particles' extraction portion, during a time of injection to extraction of the particles.

Abstract translation: 圆形加速器包括：产生弯曲磁场的弯曲电磁体; 射频电源，其根据带电粒子的轨道频率产生射频电场; 连接到所述射频电源的射频电磁场耦合部; 连接到射频电磁场耦合部分的加速电极; 以及加速电极对置的接地板，其设置成在板本身和加速电极之间形成加速间隙，用于在带电粒子的运动方向上产生射频电磁场; 其中所述弯曲电磁体产生所述弯曲磁场，所述弯曲磁场以使得所述带电粒子的轨道频率相对于所述带电粒子提取部分的轨道频率在0.7％至24.7％的变化范围内变化的方式变化， 注射时间来提取颗粒。