摘要:
A piezoelectric element comprises a piezoelectric layer consisting a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is magnesium and a second dopant element that is at least one of manganese, titanium, vanadium, niobium and tin.
摘要:
A piezoelectric element comprises a piezoelectric layer and an electrode provided to the piezoelectric layer. The piezoelectric layer is made of complex oxide having a Perovskite-type structure containing bismuth and iron, and the complex oxide includes at least one kind of a first doping element selected from the group consisting of sodium, potassium, calcium, strontium and barium and a second doping element formed from cerium.
摘要:
A piezoelectric element comprises a piezoelectric layer consisting a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is at least one of magnesium and zinc and a second dopant element that is cerium.
摘要:
A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element. The piezoelectric layer contains a perovskite complex oxide containing Bi, La, Fe, and Mn and is ferroelectric.
摘要:
A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element. The piezoelectric element has piezoelectric layer contains a perovskite complex oxide containing Bi, La, Fe, and Mn and can undergo electric-field-induced phase transition.
摘要:
A piezoelectric element comprises a piezoelectric layer and an electrode which is provided with the piezoelectric layer. The piezoelectric layer comprises a complex oxide which has a perovskite structure including bismuth, iron, a first dopant element which is at least one type selected from a group formed from sodium, potassium, calcium, and strontium, and a second dopant element which is at least one type selected from a group formed from manganese, titanium, vanadium, niobium, and tin.
摘要:
A piezoelectric element comprises a piezoelectric layer consisting of a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is at least one selected from the group consisting of sodium, potassium, calcium, strontium and barium, and a second dopant element that is cerium.
摘要:
A liquid ejecting head has a piezoelectric element with a first electrode, a piezoelectric layer, and a second electrode. The liquid ejecting head causes pressure changes in a pressure generating chamber communicating with a nozzle opening. The piezoelectric layer has a perovskite structure and is preferentially orientated in a (100) plane. A method for producing the liquid ejecting head includes polarizing the piezoelectric layer by applying an electric field having energy higher than energy required for converting the polarization direction in the direction to the direction and lower than energy required for converting the polarization direction in the direction to the direction when the electric field to be applied to the piezoelectric layer is in the direction vertical to a plane on which the second electrode is provided.
摘要:
A liquid-ejecting head including a pressure-generating chamber communicating with an nozzle, and a piezoelectric element having a first electrode, a piezoelectric layer arranged above the first electrode, and a second electrode arranged above the piezoelectric layer. An internal electric field in the piezoelectric layer is biased toward the first electrode or the second electrode and no voltage is applied to the first electrode or the second electrode.
摘要:
A variable resistance element includes: a first electrode; a resistance layer formed on the first electrode; and a second electrode formed on the resistance layer, wherein the resistance layer is composed of transition metal oxide having oxygen defects.