公开(公告)号：US20070161247A1

公开(公告)日：2007-07-12

申请号：US11458489

申请日：2006-07-19

申请人： Sakae KOYATA ,  Tomohiro HASHII ,  Katsuhiko MURAYAMA ,  Kazushige TAKAISHI ,  Takeo KATOH

发明人： Sakae KOYATA ,  Tomohiro HASHII ,  Katsuhiko MURAYAMA ,  Kazushige TAKAISHI ,  Takeo KATOH

IPC分类号： C03C15/00 ,  H01L21/302

CPC分类号： H01L21/30608 ,  H01L21/02019 ,  H01L21/02087 ,  H01L21/67075 ,  H01L21/6708

摘要： Local shape collapse of a wafer end portion is suppressed to the minimum level, and a wafer front surface as well as a wafer end portion is uniformly etched while preventing an etchant from flowing to a wafer rear surface. There is provided an etching method of a single wafer which supplies an etchant onto a wafer front surface in a state where a single wafer having flattened front and rear surfaces is held, and etches the wafer front surface and a front surface side end portion by using a centrifugal force generated by horizontally rotating the wafer. According to this method, the etchant is intermittently supplied onto the front surface of the wafer in twice or more, supply of the etchant is stopped after the etchant for one process is supplied, and the etchant for the next process is supplied after the supplied etchant flows off from the end portion of the wafer.

摘要翻译： 将晶片端部的局部形状塌陷抑制到最小水平，并且在防止蚀刻剂流入晶片后表面的同时均匀地蚀刻晶片前表面以及晶片端部。 提供了在保持具有平坦的前后表面的单个晶片的状态下将蚀刻剂提供到晶片前表面的状态的单晶片的蚀刻方法，并且通过使用晶片前表面和前表面侧端部蚀刻 通过水平旋转晶片产生的离心力。 根据该方法，蚀刻剂以两次或更多次间歇地供给到晶片的前表面上，在提供一个工艺的蚀刻剂之后停止供应蚀刻剂，并且在所提供的蚀刻剂之后提供用于下一工艺的蚀刻剂 从晶片的端部流出。

公开(公告)号：US20100021688A1

公开(公告)日：2010-01-28

申请号：US12506290

申请日：2009-07-21

申请人： Takeo KATOH ,  Tomohiro HASHII ,  Katsuhiko MURAYAMA ,  Sakae KOYATA ,  Kazushige TAKAISHI

发明人： Takeo KATOH ,  Tomohiro HASHII ,  Katsuhiko MURAYAMA ,  Sakae KOYATA ,  Kazushige TAKAISHI

IPC分类号： B32B3/00 ,  H01L21/306 ,  B24B7/20 ,  B24B1/00 ,  H01L21/322

CPC分类号： H01L21/02008 ,  H01L21/3221 ,  Y10T428/24355

摘要： A wafer manufacturing method includes after flattening both upper and lower surfaces of a wafer sliced from a single crystal ingot, processing the wafer having damage on both surfaces caused by the flattening, so as to obtain desired damage at least on the lower surface of the wafer, the desired damage having a damage depth ranging from 5 nm-10 μm; forming a polysilicon layer at least on the lower surface of the wafer while the damage on the lower surface of the wafer remains; single-wafer etching the upper surface of the wafer; and final polishing the upper surface of the wafer to have a mirrored surface, after the single-wafer etching.

摘要翻译： 晶片制造方法包括在从单晶锭切片的晶片的上表面和下表面平坦化之后，对由平坦化引起的在两个表面上的损伤进行处理，从而至少在晶片的下表面上获得所需的损伤 具有5nm-10μm的损伤深度的所需损伤; 至少在晶片的下表面上形成多晶硅层，同时晶片的下表面上的损坏保留; 单晶片蚀刻晶片的上表面; 并且在单晶片蚀刻之后，最终抛光晶片的上表面以具有镜像表面。