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公开(公告)号：US07784171B2
公开(公告)日：2010-08-31
申请号：US11797603
申请日：2007-05-04
申请人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
发明人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
CPC分类号： G11B5/3906 , G11B5/3909 , G11B2005/3996 , Y10T29/49021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is provided for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The magneto-resistive device has a magneto-resistive layer formed on one surface side of a base, and an insulating layer formed of two layers and deposited around the magneto-resistive layer. The layer of the insulating layer closest to the base is made of a metal or semiconductor oxide. This layer extends over end faces of a plurality of layers made of different materials from one another, which make up the magneto-resistive device, and is in contact with the end faces of the plurality of layers with the same materials.
摘要翻译： 提供了一种用于制造磁阻装置的方法。 该磁阻装置用于减少由退火引起的器件特性的劣化。 磁阻装置具有形成在基底的一个表面侧上的磁阻层和由两层形成并且沉积在磁阻层周围的绝缘层。 最靠近基底的绝缘层的层由金属或半导体氧化物制成。 该层在由不同材料制成的多个层的端面上延伸，其构成磁阻装置，并且与相同材料的多个层的端面接触。
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2.发明申请公开(公告)号：US20090038143A1
公开(公告)日：2009-02-12
申请号：US12232785
申请日：2008-09-24
申请人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
发明人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , G11B5/3909 , G11B2005/3996 , Y10T29/49021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is provided for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The magneto-resistive device has a magneto-resistive layer formed on one surface side of a base, and an insulating layer formed of two layers and deposited around the magneto-resistive layer. The layer of the insulating layer closest to the base is made of a metal or semiconductor oxide. This layer extends over end faces of a plurality of layers made of different materials from one another, which make up the magneto-resistive device, and is in contact with the end faces of the plurality of layers with the same materials.
摘要翻译： 提供了一种用于制造磁阻装置的方法。 该磁阻装置用于减少由退火引起的器件特性的劣化。 磁阻装置具有形成在基底的一个表面侧上的磁阻层和由两层形成并且沉积在磁阻层周围的绝缘层。 最靠近基底的绝缘层的层由金属或半导体氧化物制成。 该层在由不同材料制成的多个层的端面上延伸，其构成磁阻装置，并且与相同材料的多个层的端面接触。
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3.发明申请公开(公告)号：US20070206334A1
公开(公告)日：2007-09-06
申请号：US11797603
申请日：2007-05-04
申请人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
发明人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , G11B5/3909 , G11B2005/3996 , Y10T29/49021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is provided for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The magneto-resistive device has a magneto-resistive layer formed on one surface side of a base, and an insulating layer formed of two layers and deposited around the magneto-resistive layer. The layer of the insulating layer closest to the base is made of a metal or semiconductor oxide. This layer extends over end faces of a plurality of layers made of different materials from one another, which make up the magneto-resistive device, and is in contact with the end faces of the plurality of layers with the same materials.
摘要翻译： 提供了一种用于制造磁阻装置的方法。 该磁阻装置用于减少由退火引起的器件特性的劣化。 磁阻装置具有形成在基底的一个表面侧上的磁阻层和由两层形成并且沉积在磁阻层周围的绝缘层。 最靠近基底的绝缘层的层由金属或半导体氧化物制成。 该层在由不同材料制成的多个层的端面上延伸，其构成磁阻装置，并且与相同材料的多个层的端面接触。
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公开(公告)号：US08240026B2
公开(公告)日：2012-08-14
申请号：US12232785
申请日：2008-09-24
申请人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
发明人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
CPC分类号： G11B5/3906 , G11B5/3909 , G11B2005/3996 , Y10T29/49021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The magneto-resistive device has a magneto-resistive layer formed on one surface side of a base, and an insulating layer formed of two layers and deposited around the magneto-resistive layer. The layer of the insulating layer closest to the base is made of a metal or semiconductor oxide. This layer extends over end faces of a plurality of layers made of different materials from one another, which make up the magneto-resistive device, and is in contact with the end faces of the plurality of layers with the same materials.
摘要翻译： 一种用于制造磁阻装置的方法。 该磁阻装置用于减少由退火引起的器件特性的劣化。 磁阻装置具有形成在基底的一个表面侧上的磁阻层和由两层形成并且沉积在磁阻层周围的绝缘层。 最靠近基底的绝缘层的层由金属或半导体氧化物制成。 该层在由不同材料制成的多个层的端面上延伸，其构成磁阻装置，并且与相同材料的多个层的端面接触。
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公开(公告)号：US07436633B2
公开(公告)日：2008-10-14
申请号：US11205072
申请日：2005-08-17
申请人： Hiroshi Kiyono , Tetsuya Kuwashima , Takeo Kagami , Noriaki Kasahara , Naoki Ohta , Nozomu Hachisuka
发明人： Hiroshi Kiyono , Tetsuya Kuwashima , Takeo Kagami , Noriaki Kasahara , Naoki Ohta , Nozomu Hachisuka
IPC分类号： G11B5/245
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/31 , G11B5/3912 , G11B5/3967 , G11B5/4826 , G11B2005/3996
摘要： A parasitic capacity C4 generated between a slider substrate and the first shield layer with the first insulating layer as a capacity layer is made substantially equal to a parasitic capacity C2 occurring between a lower magnetic layer and the second shield layer with the third insulating layer as a capacity layer. Preferably, a connection is made between the lower magnetic layer and the slider substrate by a resistance of preferably 100 (Ω) or lower. Thus, it is possible to provide a thin-film magnetic head that can hold back deterioration in a reproducing device and the occurrence of errors due to crosstalk between a recording device and the reproducing device and extraneous noises.
摘要翻译： 在第一绝缘层作为电容层的滑块基板与第一屏蔽层之间产生的寄生电容C 4大体上等于具有第三绝缘层的下磁层与第二屏蔽层之间的寄生电容C 2 作为容量层。 优选地，通过优选100（Ω）或更低的电阻在下磁性层和滑块基板之间形成连接。 因此，可以提供能够抑制再现装置中的劣化的薄膜磁头和由于记录装置与再现装置之间的串扰而引起的错误的发生以及无关的噪声。
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6.发明申请公开(公告)号：US20060176618A1
公开(公告)日：2006-08-10
申请号：US11348487
申请日：2006-02-07
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3912 , G11B2005/3996
摘要： A composite thin-film magnetic head includes a substrate; a first insulation layer laminated on the substrate; an MR read head element formed on the first insulation layer and provided with a lower shield layer, an upper shield layer and an MR layer in which a sense current flows in a direction perpendicular to a surface of the MR layer through the upper shield layer and the lower shield layer; a second insulation layer laminated on the MR read head element; an inductive write head element formed on the second insulation layer and provided with a lower magnetic pole layer, a recording gap layer, an upper magnetic pole layer whose end portion is opposed to an end portion of the lower magnetic pole layer through the recording gap layer and a write coil; and a nonmagnetic conductive layer electrically conducted with the lower shield layer and opposed to the substrate in order to increase substantially countered area between the lower shield layer and the substrate.
摘要翻译： 复合薄膜磁头包括基板; 层叠在所述基板上的第一绝缘层; 形成在第一绝缘层上并具有下屏蔽层，上屏蔽层和MR层的MR读头元件，其中感测电流通过上屏蔽层沿垂直于MR层的表面的方向流动， 下屏蔽层; 层叠在MR读取头元件上的第二绝缘层; 形成在第二绝缘层上并具有下磁极层的感应写头元件，记录间隙层，其上端部通过记录间隙层与下磁极层的端部相对的上磁极层 和一个写入线圈; 以及与下屏蔽层电连接并与基板相对的非磁性导电层，以便增加下屏蔽层和基板之间的基本上反向的面积。
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公开(公告)号：US06669983B2
公开(公告)日：2003-12-30
申请号：US10279125
申请日：2002-10-24
申请人： Takeo Kagami , Naoki Ohta , Tetsuya Kuwashima
发明人： Takeo Kagami , Naoki Ohta , Tetsuya Kuwashima
IPC分类号： B05D512
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996
摘要： A manufacturing method of a thin-film magnetic head provided with an MR element includes a step of forming an MR multi-layered structure in which a current flows in a direction perpendicular to surfaces of layers of the MR multi-layered structure, on a lower electrode film, a step of depositing an insulation film on the formed MR multi-layered structure and the lower electrode film, a step of flattening the deposited insulation film until at least upper surface of the MR multi-layered structure is exposed, and a step of forming an upper electrode film on the flattened insulation film and the MR multi-layered structure.
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8.发明授权公开(公告)号：US07308751B2
公开(公告)日：2007-12-18
申请号：US11711120
申请日：2007-02-27
申请人： Takeo Kagami , Tetsuya Kuwashima , Kentaro Nagai
发明人： Takeo Kagami , Tetsuya Kuwashima , Kentaro Nagai
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043
摘要： A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of the characteristics of the magnetic head against a high temperature environment. A TMR device includes a tunnel barrier layer made of an oxide layer. A DLC film serving as a protection film and an underlying layer therefor are formed on an end face of the TMR device on an air bearing surface side. A layer made of an oxide of a metal or an oxide of a semiconductor is formed between the underlying layer and the end face of the tunnel barrier layer on the air bearing surface side to be in contact with the end face of the tunnel barrier layer.
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公开(公告)号：US07253994B2
公开(公告)日：2007-08-07
申请号：US10746045
申请日：2003-12-29
申请人： Takeo Kagami , Tetsuya Kuwashima
发明人： Takeo Kagami , Tetsuya Kuwashima
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01L43/08
摘要： A magnetic head has a base, and a magneto-resistive device supported by the base. The magneto-resistive device includes a magneto-resistive layer formed on one surface side of the base, and a first film. The first film is formed to be in contact with an effective region effectively involved in detection of magnetism in the magneto-resistive layer on both sides or one side of the effective region in a track width direction without overlapping with the effective region. The track width direction is substantially parallel to a film surface of the magneto-resistive layer. The first film is a single-layer film or a multiple-layer film. The first film includes a soft magnetic layer which does not form part of a layer for applying a biasing magnetic field to the free layer. The soft magnetic layer contributes to a reduction in side reading.
摘要翻译： 磁头具有基座和由基座支撑的磁阻装置。 磁阻装置包括形成在基底的一个表面侧上的磁阻层和第一膜。 第一膜被形成为与有效区域有效地相关联，该有效区域有效地涉及在轨道宽度方向上的有效区域的两侧或一侧的磁阻层中的磁性的检测，而不与有效区域重叠。 轨道宽度方向基本上平行于磁阻层的膜表面。 第一膜是单层膜或多层膜。 第一膜包括不形成用于向自由层施加偏置磁场的层的一部分的软磁性层。 软磁性层有助于减少侧面读数。
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10.发明申请公开(公告)号：US20070163103A1
公开(公告)日：2007-07-19
申请号：US11711120
申请日：2007-02-27
申请人： Takeo Kagami , Tetsuya Kuwashima , Kentaro Nagai
发明人： Takeo Kagami , Tetsuya Kuwashima , Kentaro Nagai
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043
摘要： A magnetic head has less variations in the resistance of a magneto-resistive device before and after the magnetic head is left in a high temperature environment so as to have higher stability of the characteristics of the magnetic head against a high temperature environment. A TMR device includes a tunnel barrier layer made of an oxide layer. A DLC film serving as a protection film and an underlying layer therefor are formed on an end face of the TMR device on an air bearing surface side. A layer made of an oxide of a metal or an oxide of a semiconductor is formed between the underlying layer and the end face of the tunnel barrier layer on the air bearing surface side to be in contact with the end face of the tunnel barrier layer.
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