公开(公告)号：US20070128852A1

公开(公告)日：2007-06-07

申请号：US11472384

申请日：2006-06-22

申请人： Takeo Shirahama ,  Toshihiko Shiga ,  Kouichirou Hori

发明人： Takeo Shirahama ,  Toshihiko Shiga ,  Kouichirou Hori

IPC分类号： H01L21/4763

CPC分类号： H01L21/76898 ,  H01L21/0475

摘要： In a method for manufacturing a semiconductor device wherein via holes are formed in an SiC substrate, a stacked film consisting of a Ti film and an Au film is formed on the back face of the SiC substrate, and a Pd film is formed thereon. Then, an Ni film is formed by non-electrolytic plating, using the Pd film as a catalyst. Thereafter, via holes penetrating through the SiC substrate are formed by etching, using the Ni film as a mask.

摘要翻译： 在SiC衬底中形成通孔的半导体器件的制造方法中，在SiC衬底的背面上形成由Ti膜和Au膜构成的层叠膜，在其上形成Pd膜。 然后，使用Pd膜作为催化剂，通过非电解电镀形成Ni膜。 此后，使用Ni膜作为掩模，通过蚀刻形成贯穿SiC衬底的通孔。

公开(公告)号：US07288486B2

公开(公告)日：2007-10-30

申请号：US11472384

申请日：2006-06-22

申请人： Takeo Shirahama ,  Toshihiko Shiga ,  Kouichirou Hori

发明人： Takeo Shirahama ,  Toshihiko Shiga ,  Kouichirou Hori

IPC分类号： H01L21/461

CPC分类号： H01L21/76898 ,  H01L21/0475

摘要： In a method for manufacturing a semiconductor device wherein via holes are formed in an SiC substrate, a stacked film consisting of a Ti film and an Au film is formed on the back face of the SiC substrate, and a Pd film is formed thereon. Then, an Ni film is formed by non-electrolytic plating, using the Pd film as a catalyst. Thereafter, via holes penetrating through the SiC substrate are formed by etching, using the Ni film as a mask.

公开(公告)号：US20090185595A1

公开(公告)日：2009-07-23

申请号：US12348061

申请日：2009-01-02

申请人： Yasuyuki Nakagawa ,  Harumi Nishiguchi ,  Kyosuke Kuramoto ,  Masatsugu Kusunoki ,  Takeo Shirahama ,  Yosuke Suzuki ,  Hiromasu Matsuoka

发明人： Yasuyuki Nakagawa ,  Harumi Nishiguchi ,  Kyosuke Kuramoto ,  Masatsugu Kusunoki ,  Takeo Shirahama ,  Yosuke Suzuki ,  Hiromasu Matsuoka

IPC分类号： H01S5/028

CPC分类号： H01S5/32341 ,  H01S5/028

摘要： A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film; to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.

摘要翻译： GaN激光器包括在发射激光的前端表面上的涂膜。 涂膜包括与前端表面接触的第一绝缘膜和第一绝缘膜上的第二绝缘膜。 第二绝缘膜的光学膜厚度相对于半导体激光器产生的激光的波长λ为λ/ 4的奇数倍。 第一绝缘膜对GaN的附着力比第二绝缘膜的粘附强; 到GaN。 第二绝缘膜的折射率为2〜2.3μm。 第一绝缘膜为10nm以下。 第一绝缘膜是具有化学计量组成的氧化膜。

公开(公告)号：US07796664B2

公开(公告)日：2010-09-14

申请号：US12348061

申请日：2009-01-02

申请人： Yasuyuki Nakagawa ,  Harumi Nishiguchi ,  Kyosuke Kuramoto ,  Masatsugu Kusunoki ,  Takeo Shirahama ,  Yosuke Suzuki ,  Hiromasu Matsuoka

发明人： Yasuyuki Nakagawa ,  Harumi Nishiguchi ,  Kyosuke Kuramoto ,  Masatsugu Kusunoki ,  Takeo Shirahama ,  Yosuke Suzuki ,  Hiromasu Matsuoka

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  H01S5/028

摘要： A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.

摘要翻译： GaN激光器包括在发射激光的前端表面上的涂膜。 涂膜包括与前端表面接触的第一绝缘膜和第一绝缘膜上的第二绝缘膜。 第二绝缘膜的光学膜厚度相对于由半导体激光器产生的激光的波长λ为λ/ 4的奇数倍。 第一绝缘膜对GaN的附着力比第二绝缘膜对GaN的粘合强。 第二绝缘膜的折射率为2〜2.3μm。 第一绝缘膜为10nm以下。 第一绝缘膜是具有化学计量组成的氧化膜。

公开(公告)号：US07544611B2

公开(公告)日：2009-06-09

申请号：US11935494

申请日：2007-11-06

申请人： Takeo Shirahama

发明人： Takeo Shirahama

IPC分类号： H01L21/3065

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

摘要： An aluminum gallium nitride/gallium nitride layer (III-V nitride semiconductor layer) is formed on the surface of a silicone carbide substrate. The aluminum gallium nitride/gallium nitride layer is dry-etched from an exposed surface, using a chlorine-based gas (first gas) and a surface via hole is thereby formed. A back via hole, which is to be connected to the surface via hole, is formed by dry-etching the silicon carbide substrate from an exposed back side using a fluorine-based gas (second gas).

摘要翻译： 在碳化硅基板的表面上形成氮化镓镓/氮化镓层（III-V族氮化物半导体层）。 由此，利用氯系气体（第一气体），从露出的表面干蚀刻氮化镓/氮化镓层，形成表面通孔。 通过使用氟系气体（第二气体）从暴露的背面对碳化硅基板进行干式蚀刻，形成与表面通孔连接的背面通孔。

公开(公告)号：US20070082427A1

公开(公告)日：2007-04-12

申请号：US11472324

申请日：2006-06-22

申请人： Takeo Shirahama ,  Shinichi Miyakuni ,  Toshiaki Kitano ,  Takahiro Iino ,  Kouichirou Nishizawa

发明人： Takeo Shirahama ,  Shinichi Miyakuni ,  Toshiaki Kitano ,  Takahiro Iino ,  Kouichirou Nishizawa

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/469

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L2221/68345

摘要： In a method for manufacturing a compound semiconductor device, a principal surface of a SiC wafer, on which a compound semiconductor device is located, is bonded to a support substrate with an adhesive having a softening point higher than 200° C. A via hole is formed dry etching, including supplying a fluorine-containing etching gas to a rear side of the SiC wafer. Thereafter, the support substrate and the adhesive are removed. Preferably, the adhesive is formed by reacting one material coating the principal surface of the SiC wafer, and another material coating the support substrate.

摘要翻译： 在化合物半导体器件的制造方法中，将化合物半导体器件所位于的SiC晶片的主面用软化点高于200℃的粘合剂与支撑基板接合。通孔为 形成干蚀刻，包括向SiC晶片的后侧供给含氟蚀刻气体。 此后，除去支撑基板和粘合剂。 优选地，粘合剂通过使涂覆在SiC晶片的主表面上的一种材料和涂覆在支撑衬底上的另一种材料反应而形成。

公开(公告)号：US20080318422A1

公开(公告)日：2008-12-25

申请号：US11935494

申请日：2007-11-06

申请人： Takeo Shirahama

发明人： Takeo Shirahama

IPC分类号： H01L21/4763

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

摘要： An aluminum gallium nitride/gallium nitride layer (III-V nitride semiconductor layer) is formed on the surface of a silicone carbide substrate. The aluminum gallium nitride/gallium nitride layer is dry-etched from an exposed surface, using a chlorine-based gas (first gas) and a surface via hole is thereby formed. A back via hole, which is to be connected to the surface via hole, is formed by dry-etching the silicon carbide substrate from an exposed back side using a fluorine-based gas (second gas).

摘要翻译： 在碳化硅基板的表面上形成氮化镓镓/氮化镓层（III-V族氮化物半导体层）。 由此，利用氯系气体（第一气体），从露出的表面干蚀刻氮化镓/氮化镓层，形成表面通孔。 通过使用氟系气体（第二气体）从暴露的背面对碳化硅基板进行干式蚀刻，形成与表面通孔连接的背面通孔。