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公开(公告)号：US20100164028A1
公开(公告)日：2010-07-01
申请号：US12722079
申请日：2010-03-11
IPC分类号： H01L29/84
CPC分类号： H01L29/84 , G01L9/0042 , G01L9/0054
摘要： A semiconductor pressure sensor includes a cavity disposed in one silicon substrate of a SOI substrate having two silicon substrates bonded to each other with an oxide film therebetween and a diaphragm formed from the other silicon substrate and the oxide film, wherein the oxide film, bordering the cavity, of the diaphragm includes an arc-shaped section at the boundary portion to the one silicon substrate defining the inner wall side surface of the cavity, the arc-shaped section having the same diameter as the diameter of the cavity in the one silicon substrate and reducing the cavity diameter from the boundary portion toward the diaphragm center.
摘要翻译： 半导体压力传感器包括设置在具有两个硅衬底的SOI衬底的一个硅衬底中的氧化膜之间具有氧化物膜的空腔和由另一硅衬底和氧化物膜形成的膜片，其中，氧化膜与 隔膜的空腔包括在限定空腔的内壁侧表面的一个硅衬底的边界部分处的弧形部分，该弧形部分具有与一个硅衬底中的腔的直径相同的直径 并且将腔体直径从边界部分朝向隔膜中心减小。
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公开(公告)号：US08552513B2
公开(公告)日：2013-10-08
申请号：US12722079
申请日：2010-03-11
IPC分类号： H01L29/84
CPC分类号： H01L29/84 , G01L9/0042 , G01L9/0054
摘要： A semiconductor pressure sensor includes a cavity disposed in one silicon substrate of a SOI substrate having two silicon substrates bonded to each other with an oxide film therebetween and a diaphragm formed from the other silicon substrate and the oxide film, wherein the oxide film, bordering the cavity, of the diaphragm includes an arc-shaped section at the boundary portion to the one silicon substrate defining the inner wall side surface of the cavity, the arc-shaped section having the same width as the width of the cavity at a desired section in the one silicon substrate and reducing the width of the cavity from the boundary portion toward the diaphragm center.
摘要翻译： 半导体压力传感器包括设置在具有两个硅衬底的SOI衬底的一个硅衬底中的氧化膜之间具有氧化物膜的空腔和由另一硅衬底和氧化物膜形成的膜片，其中，氧化膜与 隔膜的空腔包括在限定空腔的内壁侧表面的一个硅衬底的边界部分处的弧形部分，该弧形部分具有与在所需部分处的空腔宽度相同的宽度 一个硅衬底，并且从边界部分向隔膜中心减小空腔的宽度。
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公开(公告)号：USD689390S1
公开(公告)日：2013-09-10
申请号：US29415518
申请日：2012-03-12
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