公开(公告)号：US20090263925A1

公开(公告)日：2009-10-22

申请号：US12495122

申请日：2009-06-30

申请人： Tatsuya KUNISATO ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya KUNISATO ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016

摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

摘要翻译： 提供了能够抑制光输出特性的降低以及制造成品率的降低的氮化物系发光元件。 这种氮化物系发光器件包括至少含有单一类型金属的导电衬底和具有比金属低的线性膨胀系数的单一类型的无机材料和与导电衬底结合的氮化物基半导体元件层。