公开(公告)号：US20050173725A1

公开(公告)日：2005-08-11

申请号：US11047580

申请日：2005-02-02

申请人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L33/32 ,  H01L29/221

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016

摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

摘要翻译： 提供了能够抑制光输出特性的降低以及制造成品率的降低的氮化物系发光元件。 这种氮化物系发光器件包括至少含有单一类型金属的导电衬底和具有比金属低的线性膨胀系数的单一类型的无机材料和与导电衬底结合的氮化物基半导体元件层。

公开(公告)号：US07892874B2

公开(公告)日：2011-02-22

申请号：US12495122

申请日：2009-06-30

申请人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L21/00 ,  H01L31/12

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016

摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

摘要翻译： 提供了能够抑制光输出特性的降低以及制造成品率的降低的氮化物系发光元件。 这种氮化物系发光器件包括至少含有单一类型金属的导电衬底和具有比金属低的线性膨胀系数的单一类型的无机材料和与导电衬底结合的氮化物基半导体元件层。

公开(公告)号：US07488613B2

公开(公告)日：2009-02-10

申请号：US11907649

申请日：2007-10-16

申请人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016

摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

公开(公告)号：US20090263925A1

公开(公告)日：2009-10-22

申请号：US12495122

申请日：2009-06-30

申请人： Tatsuya KUNISATO ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya KUNISATO ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016

摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

摘要翻译： 提供了能够抑制光输出特性的降低以及制造成品率的降低的氮化物系发光元件。 这种氮化物系发光器件包括至少含有单一类型金属的导电衬底和具有比金属低的线性膨胀系数的单一类型的无机材料和与导电衬底结合的氮化物基半导体元件层。

公开(公告)号：US07592630B2

公开(公告)日：2009-09-22

申请号：US11047580

申请日：2005-02-02

申请人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L33/00 ,  H01L31/12

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016

摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

摘要翻译： 提供了能够抑制光输出特性的降低以及制造成品率的降低的氮化物系发光元件。 这种氮化物系发光器件包括至少含有单一类型金属的导电衬底和具有比金属低的线性膨胀系数的单一类型的无机材料和与导电衬底结合的氮化物基半导体元件层。

公开(公告)号：US20080064130A1

公开(公告)日：2008-03-13

申请号：US11907649

申请日：2007-10-16

申请人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016

摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

摘要翻译： 提供了能够抑制光输出特性的降低以及制造成品率的降低的氮化物系发光元件。 这种氮化物系发光器件包括至少含有单一类型金属的导电衬底和具有比金属低的线性膨胀系数的单一类型的无机材料和与导电衬底结合的氮化物基半导体元件层。

公开(公告)号：US07154123B2

公开(公告)日：2006-12-26

申请号：US11060484

申请日：2005-02-18

申请人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L29/167

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44

摘要： A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.

摘要翻译： 提供了能够提高光提取效率的氮化物系半导体发光元件。 该氮化物系半导体发光元件包括形成在导电性基板的表面上的第一氮化物系半导体层，形成在第一氮化物系半导体层上的活性层，形成在活性物质上的第二氮化物系半导体层 层和透光层，形成在第二氮化物系半导体层上，载流子浓度低于第二氮化物系半导体层的载流子浓度。

公开(公告)号：US20050199891A1

公开(公告)日：2005-09-15

申请号：US11060484

申请日：2005-02-18

申请人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Tatsuya Kunisato ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01L23/58 ,  H01L27/15 ,  H01L29/165 ,  H01L29/167 ,  H01L29/22 ,  H01L31/12 ,  H01L31/153 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44

摘要： A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the surface of a conductive substrate, an active layer formed on the first nitride-based semiconductor layer, a second nitride-based semiconductor layer formed on the active layer and a light transmission layer, formed on the second nitride-based semiconductor layer, having a carrier concentration lower than the carrier concentration of the second nitride-based semiconductor layer.

摘要翻译： 提供了能够提高光提取效率的氮化物系半导体发光元件。 该氮化物系半导体发光元件包括形成在导电性基板的表面上的第一氮化物系半导体层，形成在第一氮化物系半导体层上的活性层，形成在活性物质上的第二氮化物系半导体层 层和透光层，形成在第二氮化物系半导体层上，载流子浓度低于第二氮化物系半导体层的载流子浓度。

公开(公告)号：US07512167B2

公开(公告)日：2009-03-31

申请号：US11219875

申请日：2005-09-07

申请人： Hiroaki Izu ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Hiroaki Izu ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/4025 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

摘要翻译： 提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。 该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。 第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。

公开(公告)号：US20060078020A1

公开(公告)日：2006-04-13

申请号：US11219875

申请日：2005-09-07

申请人： Hiroaki Izu ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

发明人： Hiroaki Izu ,  Tsutomu Yamaguchi ,  Hiroki Ohbo ,  Ryoji Hiroyama ,  Masayuki Hata ,  Kiyoshi Oota

IPC分类号： H01S5/00

CPC分类号： H01S5/4025 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.