公开(公告)号：US20060202342A1

公开(公告)日：2006-09-14

申请号：US11407550

申请日：2006-04-19

申请人： Tatyana Andreyushchenko ,  Kenneth Cadien ,  Paul Fischer ,  Valery Dubin

发明人： Tatyana Andreyushchenko ,  Kenneth Cadien ,  Paul Fischer ,  Valery Dubin

IPC分类号： H01L23/52

CPC分类号： H01L21/76843 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76888

摘要： A method includes forming a barrier layer on a substrate surface including at least one contact opening; forming an interconnect in the contact opening; and reducing the electrical conductivity of the barrier layer. A method including forming a barrier layer on a substrate surface including a dielectric layer and a contact opening, depositing a conductive material in the contact opening, removing the conductive material sufficient to expose the barrier layer on the substrate surface, and reducing the electrical conductivity of the barrier layer. An apparatus including a circuit substrate including at least one active layer including at least one contact point, a dielectric layer on the at least one active layer, a barrier layer on a surface of the dielectric layer, a portion of the barrier layer having been transformed from a first electrical conductivity to a second different and reduced electrical conductivity, and an interconnect coupled to the at least one contact point.

公开(公告)号：US20050146034A1

公开(公告)日：2005-07-07

申请号：US10748106

申请日：2003-12-24

申请人： Tatyana Andreyushchenko ,  Kenneth Cadien ,  Paul Fischer ,  Valery Dubin

发明人： Tatyana Andreyushchenko ,  Kenneth Cadien ,  Paul Fischer ,  Valery Dubin

IPC分类号： H01L21/288 ,  H01L21/768 ,  H01L21/4763 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/76843 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76888

摘要： A method includes forming a barrier layer on a substrate surface including at least one contact opening; forming an interconnect in the contact opening; and reducing the electrical conductivity of the barrier layer. A method including forming a barrier layer on a substrate surface including a dielectric layer and a contact opening, depositing a conductive material in the contact opening, removing the conductive material sufficient to expose the barrier layer on the substrate surface, and reducing the electrical conductivity of the barrier layer. An apparatus including a circuit substrate including at least one active layer including at least one contact point, a dielectric layer on the at least one active layer, a barrier layer on a surface of the dielectric layer, a portion of the barrier layer having been transformed from a first electrical conductivity to a second different and reduced electrical conductivity, and an interconnect coupled to the at least one contact point.

摘要翻译： 一种方法包括在包括至少一个接触开口的基板表面上形成阻挡层; 在所述接触开口中形成互连; 并降低阻挡层的导电性。 一种方法，包括在包括电介质层和接触开口的衬底表面上形成阻挡层，在接触开口中沉积导电材料，去除足以暴露衬底表面上的阻挡层的导电材料，以及降低导电材料的导电性 阻挡层。 一种包括电路基板的设备，包括至少一个有源层，包括至少一个接触点，至少一个有源层上的电介质层，介电层表面上的阻挡层，阻挡层的一部分已经被转变 从第一电导率到第二不同和降低的电导率，以及耦合到所述至少一个接触点的互连。