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公开(公告)号：US07871668B2
公开(公告)日：2011-01-18
申请号：US12066310
申请日：2006-09-22
申请人： Terry M. Tritt , Bo Zhang , Jian He
发明人： Terry M. Tritt , Bo Zhang , Jian He
CPC分类号： H01L35/32 , C30B25/005 , C30B35/00 , H01L35/26
摘要： The invention is directed to CVD methods and systems that can be utilized to form nanostructures. Exceptionally high product yields can be attained. In addition, the products can be formed with predetermined particle sizes and morphologies and within a very narrow particle size distribution. The systems of the invention include a CVD reactor designed to support the establishment of a convective flow field within the reactor at the expected carrier gas flow rates. In particular, the convective flow field within the reactor can include one or more flow vortices. The disclosed invention can be particularly beneficial for forming improved thermoelectric materials with high values for the figure of merit (ZT).
摘要翻译： 本发明涉及可用于形成纳米结构的CVD方法和系统。 可以获得极高的产品产量。 此外，产品可以以预定的粒度和形态形成并且在非常窄的粒度分布内。 本发明的系统包括设计成以预期的载气流量支持在反应器内建立对流流场的CVD反应器。 特别地，反应器内的对流流场可以包括一个或多个流动涡流。 所公开的发明可以特别有利于形成具有高品质因数（ZT）的改进的热电材料。
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公开(公告)号：US20090140211A1
公开(公告)日：2009-06-04
申请号：US12066310
申请日：2006-09-22
申请人： Terry M. Tritt , Bo Zhang , Jian He
发明人： Terry M. Tritt , Bo Zhang , Jian He
CPC分类号： H01L35/32 , C30B25/005 , C30B35/00 , H01L35/26
摘要： The invention is directed to CVD methods and systems that can be utilized to form nanostructures. Exceptionally high product yields can be attained. In addition, the products can be formed with predetermined particle sizes and morphologies and within a very narrow particle size distribution. The systems of the invention include a CVD reactor designed to support the establishment of a convective flow field within the reactor at the expected carrier gas flow rates. In particular, the convective flow field within the reactor can include one or more flow vortices. The disclosed invention can be particularly beneficial for forming improved thermoelectric materials with high values for the figure of merit (ZT).
摘要翻译： 本发明涉及可用于形成纳米结构的CVD方法和系统。 可以获得极高的产品产量。 此外，产品可以以预定的粒度和形态形成并且在非常窄的粒度分布内。 本发明的系统包括设计成以预期的载气流量支持在反应器内建立对流流场的CVD反应器。 特别地，反应器内的对流流场可以包括一个或多个流动涡流。 所公开的发明可以特别有利于形成具有高品质因数（ZT）的改进的热电材料。
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3.发明授权
公开(公告)号：US5104850A
公开(公告)日：1992-04-14
申请号：US486639
申请日：1990-02-28
申请人： Virgil Provenzano , Anand K. Singh , M. A. Imam , Terry M. Tritt
发明人： Virgil Provenzano , Anand K. Singh , M. A. Imam , Terry M. Tritt
IPC分类号： H01L39/24
CPC分类号： H01L39/248
摘要： A high temperature superconducting coating of material oxide is produced by melting the metal oxide mixture, dipping a substrate, e.g. a platinum wire, in the metal oxide melt, withdrawing the substrate with a layer of metal oxide coated thereon, slowly cooling the metal oxide coating to avoid thermal shock and hot cracking, and post-annealing the metal oxide coating.
摘要翻译： 材料氧化物的高温超导涂层是通过熔化金属氧化物混合物，浸渍基材，例如， 金属氧化物熔体中的铂丝，用涂覆有金属氧化物层的衬底取出衬底，缓慢冷却金属氧化物涂层，以避免热冲击和热裂纹，并对金属氧化物涂层进行后退火。
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公开(公告)号：US06552255B1
公开(公告)日：2003-04-22
申请号：US09390127
申请日：1999-09-03
IPC分类号： H01L3528
CPC分类号： H01L35/16
摘要： The thermoelectric properties (resistivity, thermopower and thermal conductivity) of single crystals of the low-dimensional pentatelluride materials are disclosed. The pentatellurides are well suited for use in thermoelectric devices. In general, the pentatellurides include hafnium pentatelluride and zirconium pentatelluride, which can both be substituted with selective amounts of various metals, including titanium, selenium, and antimony.
摘要翻译： 公开了低维度五碲化物材料的单晶的热电特性（电阻率，热电导率和导热系数）。 五卤化物非常适合用于热电装置。 通常，五元环化物包括五碲化铪和五碲化锆，它们都可以被选择量的各种金属（包括钛，硒和锑）取代。
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