公开(公告)号：US20090236585A1

公开(公告)日：2009-09-24

申请号：US12366480

申请日：2009-02-05

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L33/00 ,  H01S5/00 ,  H01L29/06

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US07579627B2

公开(公告)日：2009-08-25

申请号：US11435932

申请日：2006-05-18

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L31/12

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US20080283866A1

公开(公告)日：2008-11-20

申请号：US12216533

申请日：2008-07-07

申请人： Teruyoshi Takakura ,  Shigetoshi Ito ,  Takeshi Kamikawa

发明人： Teruyoshi Takakura ,  Shigetoshi Ito ,  Takeshi Kamikawa

IPC分类号： H01L33/00

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L33/007 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/0211 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333

摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

摘要翻译： 在本发明的氮化物半导体发光元件的制造方法中，首先，准备形成有槽部的氮化物半导体基板。 在包括沟槽部分的侧壁的氮化物半导体衬底上形成包括氮化物半导体的下层，使得下层在每个沟槽部分中具有晶体表面，并且晶体表面以 相对于基板的表面为53.5°〜63.4°。 在下层之上，形成由包含Al的下包层，有源层和含有Al的上包层组成的发光器件结构。 根据本发明，在氮化物半导体衬底上堆积具有氮化物半导体的发光器件结构的层时发生的厚度不均匀性和表面平坦度不足，同时抑制裂纹的发生。

公开(公告)号：US07410819B2

公开(公告)日：2008-08-12

申请号：US11296532

申请日：2005-12-08

申请人： Teruyoshi Takakura ,  Shigetoshi Ito ,  Takeshi Kamikawa

发明人： Teruyoshi Takakura ,  Shigetoshi Ito ,  Takeshi Kamikawa

IPC分类号： H01L21/20

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L33/007 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/0211 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333

摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

公开(公告)号：US07700963B2

公开(公告)日：2010-04-20

申请号：US12216533

申请日：2008-07-07

申请人： Teruyoshi Takakura ,  Shigetoshi Ito ,  Takeshi Kamikawa

发明人： Teruyoshi Takakura ,  Shigetoshi Ito ,  Takeshi Kamikawa

IPC分类号： H01L33/00

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L33/007 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/0211 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333

摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

摘要翻译： 在本发明的氮化物半导体发光元件的制造方法中，首先，准备形成有槽部的氮化物半导体基板。 在包括沟槽部分的侧壁的氮化物半导体衬底上形成包括氮化物半导体的下层，使得下层在每个沟槽部分中具有晶体表面，并且晶体表面以 相对于基板的表面为53.5°〜63.4°。 在下层之上，形成由包含Al的下包层，有源层和含有Al的上包层组成的发光器件结构。 根据本发明，在氮化物半导体衬底上堆积具有氮化物半导体的发光器件结构的层时发生的厚度不均匀性和表面平坦度不足，同时抑制裂纹的发生。

公开(公告)号：US20060131590A1

公开(公告)日：2006-06-22

申请号：US11296532

申请日：2005-12-08

申请人： Teruyoshi Takakura ,  Shigetoshi Ito ,  Takeshi Kamikawa

发明人： Teruyoshi Takakura ,  Shigetoshi Ito ,  Takeshi Kamikawa

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L33/007 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/0211 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333

摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

摘要翻译： 在本发明的氮化物半导体发光元件的制造方法中，首先，准备形成有槽部的氮化物半导体基板。 在包括沟槽部分的侧壁的氮化物半导体衬底上形成包括氮化物半导体的下层，使得下层在每个沟槽部分中具有晶体表面，并且晶体表面以 相对于基板的表面为53.5°〜63.4°。 在下层之上，形成由包含Al的下包层，有源层和含有Al的上包层组成的发光器件结构。 根据本发明，在氮化物半导体衬底上堆积具有氮化物半导体的发光器件结构的层时发生的厚度不均匀性和表面平坦度不足，同时抑制裂纹的发生。

公开(公告)号：US20050141577A1

公开(公告)日：2005-06-30

申请号：US10831659

申请日：2004-04-26

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/22 ,  H01S5/32 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US07462882B2

公开(公告)日：2008-12-09

申请号：US10831659

申请日：2004-04-26

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US20060202188A1

公开(公告)日：2006-09-14

申请号：US11435932

申请日：2006-05-18

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L31/109 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

公开(公告)号：US07858992B2

公开(公告)日：2010-12-28

申请号：US12366480

申请日：2009-02-05

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L29/04 ,  H01L29/06

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。