公开(公告)号：US20120230357A1

公开(公告)日：2012-09-13

申请号：US13438423

申请日：2012-04-03

申请人： Toshiyuki KAWAKAMI ,  Tomoki ONO ,  Shigetoshi ITO ,  Susumu OMI

发明人： Toshiyuki KAWAKAMI ,  Tomoki ONO ,  Shigetoshi ITO ,  Susumu OMI

IPC分类号： H01S5/10

CPC分类号： H01S5/22 ,  H01S5/10 ,  H01S5/32341 ,  H01S2301/176

摘要： In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

摘要翻译： 在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条结构，并且具有彼此相对的侧表面， 在其宽度方向夹着条形波导。 处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

公开(公告)号：US08170076B2

公开(公告)日：2012-05-01

申请号：US12982231

申请日：2010-12-30

申请人： Toshiyuki Kawakami ,  Tomoki Ono ,  Shigetoshi Ito

发明人： Toshiyuki Kawakami ,  Tomoki Ono ,  Shigetoshi Ito

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  H01S5/10 ,  H01S5/32341 ,  H01S2301/176

摘要： In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

摘要翻译： 在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条结构，并且具有彼此相对的侧表面， 在其宽度方向夹着条形波导。 处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

公开(公告)号：US07579627B2

公开(公告)日：2009-08-25

申请号：US11435932

申请日：2006-05-18

申请人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

发明人： Yoshihiro Ueta ,  Teruyoshi Takakura ,  Takeshi Kamikawa ,  Yuhzoh Tsuda ,  Shigetoshi Ito ,  Takayuki Yuasa ,  Mototaka Taneya ,  Kensaku Motoki

IPC分类号： H01L31/12

CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

摘要翻译： 氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜 和位于其顶部的氮化物半导体层。 氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层， 易于显示p型导电性，以及条状激光波导区域。 激光波导区域形成在低位错区域的上方。 这有助于实现提供更长寿命的氮化物半导体激光器件。

公开(公告)号：US20090095964A1

公开(公告)日：2009-04-16

申请号：US11922986

申请日：2006-06-02

申请人： Shigetoshi Ito ,  Kunihiro Takatani ,  Susumu Omi

发明人： Shigetoshi Ito ,  Kunihiro Takatani ,  Susumu Omi

IPC分类号： H01L33/00

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/34333

摘要： In one embodiment of the present invention, a long-life nitride semiconductor laser element is disclosed wherein voltage characteristics do not deteriorate even when the element is driven at high current density. Specifically disclosed is a nitride semiconductor laser element which includes a p-type nitride semiconductor and a p-side electrode formed on the p-type nitride semiconductor. In at least one embodiment, the p-side electrode has a first layer which is in direct contact with the p-type nitride semiconductor and a conductive second layer formed on the first layer, and the second layer contains a metal element selected from the group consisting of Ti, Zr, Hf, W, Mo and Nb, and an oxygen element.

摘要翻译： 在本发明的一个实施例中，公开了一种长寿命氮化物半导体激光元件，其中即使元件以高电流密度驱动，电压特性也不会劣化。 具体公开了一种氮化物半导体激光元件，其包括形成在p型氮化物半导体上的p型氮化物半导体和p侧电极。 在至少一个实施方案中，p侧电极具有与p型氮化物半导体直接接触的第一层和形成在第一层上的导电第二层，第二层含有选自以下的金属元素： 由Ti，Zr，Hf，W，Mo和Nb组成，以及氧元素。

公开(公告)号：US07515621B2

公开(公告)日：2009-04-07

申请号：US11702625

申请日：2007-02-06

申请人： Shigetoshi Ito ,  Yuhzoh Tsuda ,  Yoshihiro Ueta

发明人： Shigetoshi Ito ,  Yuhzoh Tsuda ,  Yoshihiro Ueta

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/028 ,  H01S5/2231 ,  H01S5/34333

摘要： A nitride semiconductor laser element includes a lower clad layer, a lower adjacent layer, a quantum well active layer, an upper adjacent layer and an upper clad layer in this order. The quantum well active layer includes a plurality of well layers formed of undoped InGaN, and an undoped barrier layer sandwiched between the well layers. The barrier layer includes a first layer formed of InGaN, a second layer formed of GaN, and a third layer formed of InGaN. The In composition ratio of the first layer and the In composition ratio of the third layer are less than half the In composition ratio of the well layer.

摘要翻译： 氮化物半导体激光元件依次包括下包层，下相邻层，量子阱有源层，上相邻层和上覆层。 量子阱活性层包括由未掺杂的InGaN形成的多个阱层和夹在阱层之间的未掺杂势垒层。 阻挡层包括由InGaN形成的第一层，由GaN形成的第二层和由InGaN形成的第三层。 第一层的In组成比和第三层的In组成比小于阱层的In组成比的一半。

公开(公告)号：US20090011530A1

公开(公告)日：2009-01-08

申请号：US12211577

申请日：2008-09-16

申请人： Shigetoshi ITO ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Mototaka Taneya ,  Zenpei Tani ,  Kensaku Motoki

发明人： Shigetoshi ITO ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Mototaka Taneya ,  Zenpei Tani ,  Kensaku Motoki

IPC分类号： H01L33/00

CPC分类号： H01S5/2018 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0207 ,  H01S5/2231 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173

摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.

摘要翻译： 一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。 首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域 。 接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。 此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

公开(公告)号：US20080304528A1

公开(公告)日：2008-12-11

申请号：US12155332

申请日：2008-06-03

申请人： Shuichiro Yamamoto ,  Shigetoshi Ito ,  Fumio Yamashita ,  Toshiyuki Kawakami

发明人： Shuichiro Yamamoto ,  Shigetoshi Ito ,  Fumio Yamashita ,  Toshiyuki Kawakami

IPC分类号： H01S5/026 ,  H01L21/02

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/3202 ,  H01S2301/173

摘要： In a nitride semiconductor laser device so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (11-20) plane as the principal plane, the resonator end surface is perpendicular to the principal plane, and, in the cleavage surface forming the resonator end surface, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.

摘要翻译： 在氮化物半导体激光装置中，为了抑制氮化物半导体层上的台阶的发展，基板具有（11-20）面作为主面，共振器端面垂直于主面，在 形成谐振器端面的解理面至少由条状波导的一侧形成为朝向氮化物半导体层的表面开口的蚀刻区域的蚀刻部分。

公开(公告)号：US20080283866A1

公开(公告)日：2008-11-20

申请号：US12216533

申请日：2008-07-07

申请人： Teruyoshi Takakura ,  Shigetoshi Ito ,  Takeshi Kamikawa

发明人： Teruyoshi Takakura ,  Shigetoshi Ito ,  Takeshi Kamikawa

IPC分类号： H01L33/00

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L33/007 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/0211 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333

摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

摘要翻译： 在本发明的氮化物半导体发光元件的制造方法中，首先，准备形成有槽部的氮化物半导体基板。 在包括沟槽部分的侧壁的氮化物半导体衬底上形成包括氮化物半导体的下层，使得下层在每个沟槽部分中具有晶体表面，并且晶体表面以 相对于基板的表面为53.5°〜63.4°。 在下层之上，形成由包含Al的下包层，有源层和含有Al的上包层组成的发光器件结构。 根据本发明，在氮化物半导体衬底上堆积具有氮化物半导体的发光器件结构的层时发生的厚度不均匀性和表面平坦度不足，同时抑制裂纹的发生。

公开(公告)号：US07410819B2

公开(公告)日：2008-08-12

申请号：US11296532

申请日：2005-12-08

申请人： Teruyoshi Takakura ,  Shigetoshi Ito ,  Takeshi Kamikawa

发明人： Teruyoshi Takakura ,  Shigetoshi Ito ,  Takeshi Kamikawa

IPC分类号： H01L21/20

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L33/007 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/0211 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333

摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

公开(公告)号：US20050157769A1

公开(公告)日：2005-07-21

申请号：US11038123

申请日：2005-01-21

申请人： Shigetoshi Ito ,  Daisuke Hanaoka

发明人： Shigetoshi Ito ,  Daisuke Hanaoka

IPC分类号： H01S5/022 ,  H01S5/00 ,  H01S5/02 ,  H01S5/024 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01S5/32341 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01S5/0021 ,  H01S5/02212 ,  H01S5/02484 ,  H01S5/2231 ,  H01L2924/00014

摘要： Provided is a semiconductor laser device that is free from or suffers less from deterioration resulting from a surge or that is less likely to suffer from deterioration resulting from a surge. The semiconductor laser device has a conductive stem 101, a submount 102 fixed to the stem 101, a nitride semiconductor laser chip 103 mounted on the submount 102, pins 104 and 105 fixed to the stem 101 but insulated therefrom, a wire connecting the pin 104 to a p-electrode of the nitride semiconductor laser chip 103, a wire connecting the pin 105 to an n-electrode of the nitride semiconductor laser chip 103, and a cap 106 enclosing the nitride semiconductor laser chip 103 and the submount 102 and fixed to the stem 101.

摘要翻译： 提供一种半导体激光器件，其免于或遭受由于浪涌导致的劣化或不太可能遭受由于浪涌引起的劣化的半导体激光器件。 半导体激光器件具有导电杆101，固定到杆101的底座102，安装在基座102上的氮化物半导体激光器芯片103，固定到杆101但与之绝缘的销104和105，连接销104 涉及氮化物半导体激光器芯片103的p电极，将引脚105连接到氮化物半导体激光器芯片103的n电极的引线以及封装氮化物半导体激光器芯片103和基座102的盖106，并固定到 杆101。