公开(公告)号：US20240137038A1

公开(公告)日：2024-04-25

申请号：US18156171

申请日：2023-01-18

申请人： TetraMem Inc.

发明人： Ning Ge ,  Hengfang Zhu ,  Sangsoo Lee ,  Wenbo Yin

IPC分类号： H03M1/36

CPC分类号： H03M1/365

摘要： The present disclosure provides a voltage divider circuit utilizing non-volatile memory devices. The non-volatile memory device may include, for example, a memristor device, an MRAM (Magnetoresistive random access memory) device, a phase-change memory (PCM) device, a floating gate, a spintronic device, etc. The voltage divider circuit may include one or more first non-volatile memory devices that form a resistor ladder. The resistor ladder may produce a plurality of reference voltages when the resistor ladder is connected between two voltages.

公开(公告)号：US20240355386A1

公开(公告)日：2024-10-24

申请号：US18302278

申请日：2023-04-18

申请人： TetraMem Inc.

发明人： Hengfang Zhu ,  Wenbo Yin ,  Miao Hu

IPC分类号： G11C13/00

CPC分类号： G11C13/003 ,  G11C13/004 ,  G11C2213/79

摘要： The present disclosure relates to voltage-mode crossbar circuits that may include a plurality of bit lines intersecting with a plurality of word lines, a plurality of cross-point devices, and a plurality of sensing circuits configured to amplify bit line voltages settled on the bit lines in response to an application of input voltages to the cross-point devices via the word lines and generate digital outputs representative of the amplified bit line voltages. Each cross-point device is connected to one of the word lines and one of the bit lines and may include a resistive random-access memory (RRAM) device. Each cross-point device may further be connected to a local select line that may enable a group of cross-point devices connected to one or more bit lines. A cross-point device may be enabled when both a global select line and the local select line connected to the cross-point device are enabled.

公开(公告)号：US20240137037A1

公开(公告)日：2024-04-25

申请号：US18147576

申请日：2022-12-28

申请人： TetraMem Inc.

发明人： Ning Ge ,  Hengfang Zhu ,  Sangsoo Lee ,  Wenbo Yin

IPC分类号： H03M1/34

CPC分类号： H03M1/34

摘要： The present disclosure provides a comparator including a non-volatile memory device. The comparator is configured to compare an analog input voltage and a reference voltage and produce a digital output indicative of the comparison result. The digital output may represent a resistance state of the non-volatile memory device in response to the application of the reference voltage and the analog input voltage to the comparator. The present disclosure further provides analog-to-digital converters (ADCs) utilizing the comparator. The non-volatile memory device includes, for example, a memristor device, an MRAM (Magnetoresistive random access memory) device, a phase-change memory (PCM) device, a floating gate, a spintronic device, etc.