公开(公告)号：US20140248748A1

公开(公告)日：2014-09-04

申请号：US14278358

申请日：2014-05-15

申请人： Tetsufumi KAWAMURA ,  Takeshi SATO ,  Mutsuko HATANO ,  Yoshiaki TOYOTA, I

发明人： Tetsufumi KAWAMURA ,  Takeshi SATO ,  Mutsuko HATANO ,  Yoshiaki TOYOTA, I

IPC分类号： H01L27/12

CPC分类号： H01L27/127 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869

摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

公开(公告)号：US20110042667A1

公开(公告)日：2011-02-24

申请号：US12838451

申请日：2010-07-17

申请人： Tetsufumi KAWAMURA ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano ,  Takeshi Sato

发明人： Tetsufumi KAWAMURA ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano ,  Takeshi Sato

IPC分类号： H01L29/24 ,  H01L21/34

CPC分类号： H01L29/7869

摘要： A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask.

摘要翻译： 一种通过包括反向曝光的工艺制造薄膜晶体管（TFT）的方法，其中将氧化物半导体用于沟道层; 使用基板上的电极作为掩模，负光刻胶从基板的背面暴露于光; 去除其外露部分的负光刻胶; 并且通过使用暴露部分作为蚀刻掩模蚀刻导电膜来成形电极。

公开(公告)号：US20140106490A1

公开(公告)日：2014-04-17

申请号：US14106287

申请日：2013-12-13

申请人： Tetsufumi KAWAMURA ,  Takeshi SATO ,  Mutsuko HATANO ,  Yoshiaki TOYOTA

发明人： Tetsufumi KAWAMURA ,  Takeshi SATO ,  Mutsuko HATANO ,  Yoshiaki TOYOTA

IPC分类号： H01L27/12

CPC分类号： H01L27/127 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869

摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

摘要翻译： 提供了一种用于提高像素的开口率的显示装置。 在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极， 透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分 像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

公开(公告)号：US20110049508A1

公开(公告)日：2011-03-03

申请号：US12843977

申请日：2010-07-27

申请人： Tetsufumi KAWAMURA ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano

发明人： Tetsufumi KAWAMURA ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

摘要： In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry etching; and the portion of the sacrifice layer exposed by this dry etching is subjected to wet etching.

摘要翻译： 在薄膜晶体管的制造方法中，采取以下步骤：在由金属氧化物半导体构成的导电层上形成由金属氧化物半导体构成的牺牲层; 在牺牲层上形成金属膜; 金属膜通过干蚀刻加工; 并且通过该干蚀刻暴露的牺牲层的部分进行湿蚀刻。

公开(公告)号：US20100210070A1

公开(公告)日：2010-08-19

申请号：US12695361

申请日：2010-01-28

申请人： HIRONORI WAKANA ,  Hiroyuki UCHIYAMA ,  Tetsufumi KAWAMURA ,  Shinichi SAITO

发明人： HIRONORI WAKANA ,  Hiroyuki UCHIYAMA ,  Tetsufumi KAWAMURA ,  Shinichi SAITO

IPC分类号： H01L21/34

CPC分类号： H01L21/02631 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/7869

摘要： A method of manufacturing a field effect transistor, which has high alignment accuracy between a gate electrode and source and drain electrodes and can provide a transparent device at a low cost. Since a patterned light blocking film is formed on the rear side of a substrate and used as a photomask for forming a gate electrode pattern and a source and drain electrode pattern on the front side of the substrate, the number of photomasks is reduced, and self-alignment between the gate electrode and the source and drain electrodes is carried out, thereby improving the alignment accuracy of these electrodes. Thereby, a method of manufacturing a high-accuracy low-cost field effect transistor can be provided.

摘要翻译： 一种制造场效应晶体管的方法，其在栅极和源极和漏极之间具有高对准精度，并且可以以低成本提供透明器件。 由于在基板的背面形成图案遮光膜，作为形成栅极电极图案的光掩模和基板前侧的源极和漏极电极图案，因此光掩模的数量减少， 进行栅电极与源漏电极之间的对准，从而提高这些电极的对准精度。 由此，可以提供制造高精度低成本场效应晶体管的方法。