公开(公告)号：US20060158822A1

公开(公告)日：2006-07-20

申请号：US11313277

申请日：2005-12-20

Applicant: Shunpei Kondo ,  Tetsuo Kitabayashi

Inventor： Shunpei Kondo ,  Tetsuo Kitabayashi

IPC: H01T23/00

CPC classification number: H02N13/00 ,  H01L21/6833

Abstract: The present invention relates to a method for using an electrostatic chuck which can achieve clamping force of 100 gf/cm2 within 60 seconds at low voltage of ±1 kV or less compared to high voltage of the conventional art such as 3 kV or 10 kV for electrostatically clamping a glass substrate. There is provided a method for clamping a glass substrate with an electrostatic chuck having a dielectric layer in which the upper surface of the dielectric layer of the electrostatic chuck has a surface roughness Ra of 0.8 μm or less and the volume resistivity of the dielectric layer of the electrostatic chuck is 108-1012 Ωcm, comprising the steps of increasing the temperature of the glass substrate so as to change the volume resistivity of the glass substrate to be 1014 Ωcm or less, and clamping the glass substrate to the upper surface of the dielectric layer of the electrostatic chuck.

Abstract translation: 本发明涉及一种使用静电卡盘的方法，该静电卡盘可以在±1kV或更低的低电压下在60秒内实现100gf / cm 2的夹紧力，与常规技术的高电压相比 例如用于静电夹持玻璃基板的3kV或10kV。 提供了一种用具有电介质层的静电卡盘夹持玻璃基板的方法，其中静电卡盘的电介质层的上表面具有0.8μm或更小的表面粗糙度Ra，并且电介质层的体积电阻率 静电吸盘是10×10 12Ω，包括以下步骤：增加玻璃基板的温度，以使玻璃基板的体积电阻率变为10 以下，将玻璃基板夹持到静电卡盘的电介质层的上表面。

公开(公告)号：US07248457B2

公开(公告)日：2007-07-24

申请号：US11272788

申请日：2005-11-15

Applicant: Jun Miyaji ,  Osamu Okamoto ,  Tetsuo Kitabayashi

Inventor： Jun Miyaji ,  Osamu Okamoto ,  Tetsuo Kitabayashi

IPC: H01T23/00

CPC classification number: H02N13/00

Abstract: The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 μm or less, and whose volume resistivity is 108-1011 Ωcm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100° C. or less.

公开(公告)号：US5151845A

公开(公告)日：1992-09-29

申请号：US774641

申请日：1991-10-11

Applicant: Toshiya Watanabe ,  Tetsuo Kitabayashi

Inventor： Toshiya Watanabe ,  Tetsuo Kitabayashi

IPC: B25J15/06 ,  B23Q3/08 ,  B23Q3/15 ,  H01L21/683

CPC classification number: H01L21/6833 ,  H01L21/6831 ,  Y10T279/23

Abstract: An electrostatic chuck for electrostatically attracting and holding an object such as a semiconductor wafer includes a base plate, at least two layers each including an electrically insulating film and an electrode attached to a lower surface thereof, the at least two layers being disposed as attractive layers on the base plate, and a voltage applying assembly for selectively applying a voltage to at least one of the electrodes to electrostatically attract the object to the insulating film of an uppermost one of the layers. The insulating films may have different insulation resistances to allow for a wider range of temperature changes.

公开(公告)号：USD561206S1

公开(公告)日：2008-02-05

申请号：US29243513

申请日：2005-11-25

Applicant: Tetsuo Kitabayashi

Designer： Tetsuo Kitabayashi

公开(公告)号：US5530616A

公开(公告)日：1996-06-25

申请号：US341001

申请日：1994-11-17

Applicant: Tetsuo Kitabayashi ,  Atsushi Obara ,  Jun Miyagi ,  Yasumi Sago ,  Masami Sasaki

Inventor： Tetsuo Kitabayashi ,  Atsushi Obara ,  Jun Miyagi ,  Yasumi Sago ,  Masami Sasaki

IPC: B23Q3/15 ,  H01L21/683 ,  H02N13/00

CPC classification number: H02N13/00 ,  H01L21/6831 ,  H01L21/6833

Abstract: An electrostatic chuck for electrostatically clamping a semiconductor wafer while minimizing any plane temperature difference thereof has a dielectric layer joined to a metal plate and an inner electrode disposed in the di-electric layer. The dielectric layer has a raised outer rim disposed on an upper surface thereof along an outer peripheral edge thereof, and a plurality of protrusions disposed on the upper surface radially inwardly of the outer rim, the protrusions having upper surfaces for clamping the semiconductor wafer in direct contact therewith. The volume resistivity of the dielectric layer is 10.sup.9 .OMEGA.m or less, and Rmax (maximum height) of the clamping surfaces of the protrusions 5 is 2.0 .mu.m or less and or Ra (center-line average roughness) thereof is 0.25 .mu.m or less. The ratio of the total area of the clamping surfaces of the protrusions to the entire area of the upper surface of the dielectric layer is equal to or greater than 1% and less than 10%.

Abstract translation: 用于静电夹持半导体晶片同时最小化其平面温度差的静电卡盘具有连接到设置在二电层中的金属板和内部电极的电介质层。 电介质层具有沿着其外周边缘设置在其上表面上的凸起的外边缘，以及设置在外边缘的径向内侧的上表面上的多个突起，所述突起具有用于将半导体晶片直接夹持的上表面 与其接触。 电介质层的体积电阻率为10 10Ω·m以下，突起5的夹持面的Rmax（最大高度）为2.0μm以下，Ra（中心线平均粗糙度）为0.25μm， 减。 突起的夹持表面的总面积与介电层的上表面的整个面积的比率等于或大于1％且小于10％。

公开(公告)号：US5104834A

公开(公告)日：1992-04-14

申请号：US343805

申请日：1989-04-26

Applicant: Toshiya Watanabe ,  Tetsuo Kitabayashi ,  Chiaki Nakayama

Inventor： Toshiya Watanabe ,  Tetsuo Kitabayashi ,  Chiaki Nakayama

IPC: C04B35/111 ,  C04B35/64 ,  H01L21/683

CPC classification number: C04B35/64 ,  C04B35/111 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

Abstract: A dielectric ceramic for use in an electrostatic chuck, formed by firing in a reducing atmosphere a ceramic material mainly comprised of alumina, wherein said ceramic material comprises an alkaline earth metal in an amount of from 1.0 to 6.0% by weight in terms of oxide and a transition metal in an amount of from 0.5 to 6.0% by weight in terms of oxide, while controlling the dew point of atmosphere gas to be not more than 45.degree. C.Also disclosed is a method of making a dielectric ceramic for use in an electrostatic chuck, comprising firing a ceramic material mainly comprised of alumina and containing from 1.0 to 6.0% by weight of an alkaline earth metal in terms of oxide and from 0.5 to 6.0% by weight of a transition metal in terms of oxide, in a reducing atmosphere while controlling the dew point of atmosphere gas.

公开(公告)号：US07450365B2

公开(公告)日：2008-11-11

申请号：US11879204

申请日：2007-07-16

Applicant: Jun Miyaji ,  Osamu Okamoto ,  Tetsuo Kitabayashi

Inventor： Jun Miyaji ,  Osamu Okamoto ,  Tetsuo Kitabayashi

IPC: H01T23/00

CPC classification number: H02N13/00

Abstract: The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 μm or less, and whose volume resistivity is 108-1011 Ωcm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100° C or less.

Abstract translation: 本发明的目的是提供一种静电卡盘，其中在暴露于等离子体之后该表面可以保持光滑，以保护被夹持的材料如硅晶片免受颗粒污染，并且这是优异的 夹紧和释放待夹紧的材料。 根据本发明，提供了一种静电卡盘，其包括电介质材料，其中氧化铝为99.4重量％以上，氧化钛大于0.2重量％且等于或小于0.6重量％，其平均粒径为2 在室温下体积电阻率为10 -8 -10 11Ω，其中静电卡盘的使用温度低于100℃或更低。

公开(公告)号：US20070109713A1

公开(公告)日：2007-05-17

申请号：US11272788

申请日：2005-11-15

Applicant: Jun Miyaji ,  Osamu Okamoto ,  Tetsuo Kitabayashi

Inventor： Jun Miyaji ,  Osamu Okamoto ,  Tetsuo Kitabayashi

IPC: H01T23/00

CPC classification number: H02N13/00

Abstract: The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 μm or less, and whose volume resistivity is 108-1011 Ωcm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100° C. or less.

Abstract translation: 本发明的目的是提供一种静电卡盘，其中在暴露于等离子体之后该表面可以保持光滑，以保护被夹持的材料如硅晶片免受颗粒污染，并且这是优异的 夹紧和释放待夹紧的材料。 根据本发明，提供了一种静电卡盘，其包括电介质材料，其中氧化铝为99.4重量％以上，氧化钛大于0.2重量％且等于或小于0.6重量％，其平均粒径为2 在室温下其体积电阻率为10 -8 -10 11Ω，其中静电吸盘在100℃以下的低温下使用 。

公开(公告)号：US07209339B2

公开(公告)日：2007-04-24

申请号：US10857068

申请日：2004-05-28

Applicant: Tetsuo Kitabayashi ,  Hiroaki Hori ,  Takeshi Uchimura ,  Noriaki Tateno ,  Koh Fuwa ,  Ken Maehara

Inventor： Tetsuo Kitabayashi ,  Hiroaki Hori ,  Takeshi Uchimura ,  Noriaki Tateno ,  Koh Fuwa ,  Ken Maehara

IPC: H01H1/00

CPC classification number: B23Q3/15 ,  B23Q3/154 ,  H01L21/6833 ,  H02N13/00

Abstract: An electrostatic chuck for attracting an insulative substrate to be processed, the electrostatic chuck comprising a dielectric layer having a first surface which attracts an insulative substrate, and a second surface on which are provided a plurality of electrodes, and an insulative support base plate fixing said dielectric layer. A distance between adjacent ones of the electrodes and the thickness of the dielectric layer are adjusted such that when a potential difference is established between the electrodes, a non-uniform electric field is formed in which the insulative substrate is partially polarized and attracted to the first surface by gradient force.

Abstract translation: 一种用于吸引待处理的绝缘基板的静电卡盘，所述静电卡盘包括具有吸引绝缘基板的第一表面的电介质层和设置有多个电极的第二表面，以及固定所述绝缘基板的绝缘支撑基板， 电介质层。 调整相邻的电极之间的距离和电介质层的厚度，使得当在电极之间建立电位差时，形成不均匀的电场，其中绝缘衬底被部分偏振并吸引到第一 由梯度力表示。

公开(公告)号：US5384682A

公开(公告)日：1995-01-24

申请号：US34076

申请日：1993-03-22

Applicant: Toshiya Watanabe ,  Tetsuo Kitabayashi

Inventor： Toshiya Watanabe ,  Tetsuo Kitabayashi

IPC: H01L21/683 ,  H02N13/00

CPC classification number: H02N13/00 ,  H01L21/6831 ,  Y10T279/23

Abstract: An electrostatic chuck has a substrate, an insulating layer disposed on the substrate for attracting a workpiece thereto, and an electrode interposed between the substrate and the insulating layer. The insulating layer having a volume resistivity .rho.(.OMEGA.m), a dielectric constant .epsilon..sub.r, and a thickness d (m), and being spaced from the workpiece which is attracted thereto by a gap having a distance .delta.(m). The volume resistivity .rho., the dielectric constant .epsilon..sub.r, the thickness d, and the distance .delta. satisfy the following relationship:1.731.times.10.sup.-11 .rho.{.epsilon..sub.r +d/.delta.}

Abstract translation: 静电卡盘具有基板，设置在基板上用于吸引工件的绝缘层，以及介于基板和绝缘层之间的电极。 具有体积电阻率rho（OMEGA m），介电常数εr和厚度d（m）的绝缘层，并且与工件间隔开，间隙具有距离δ（m）。 体积电阻率rho，介电常数εr，厚度d和距离δ满足以下关系：1.731×10-11 rho {εr + d /δ} <60。