公开(公告)号：US20250140560A1

公开(公告)日：2025-05-01

申请号：US18496697

申请日：2023-10-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jackson Bauer ,  Sheldon Douglas Haynie ,  John Arch ,  Asad Haider

IPC: H01L21/266 ,  H01L21/265 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

Abstract: An integrated circuit (IC) device including one or more corrugated channel structures formed in a top portion of a semiconductor substrate, where a corrugated channel structure includes a first sidewall, a second sidewall and an upper portion. In an example, the corrugated channel structure is provided with a substantially uniform distribution profile of a dopant across a horizontal plane from the first sidewall to the second sidewall.

公开(公告)号：US20250006836A1

公开(公告)日：2025-01-02

申请号：US18344769

申请日：2023-06-29

Applicant: Texas Instruments Incorporated

Inventor： Jackson Bauer ,  Yanbiao Pan ,  Bhaskar Srinivasan ,  Pushpa Mahalingam

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/66

Abstract: Semiconductor devices including a nitrogen doped field relief dielectric layer are described. The microelectronic device comprises a substrate including a body region having a first conductivity type and a drain drift region having a second conductivity type opposite the first conductivity type; a gate dielectric layer on the substrate, the gate dielectric layer extending over the body region and the drift region and a doped field relief dielectric layer on the drift region. Doping of the field relief dielectric layer with nitrogen raises the dielectric constant of the field relief dielectric above that of pure silicon dioxide. Increasing the dielectric constant of the field relief dielectric layer may improve channel hot carrier performance, improve breakdown voltage, and reduce the specific on resistance of the microelectronic device compared to a microelectronic device of similar size with a field relief dielectric which is not doped with nitrogen.