公开(公告)号：US11997430B2

公开(公告)日：2024-05-28

申请号：US17146363

申请日：2021-01-11

Applicant: Texas Instruments Incorporated

Inventor： Noah Alan Robb ,  Harsh Dinesh Jhaveri ,  Priyankar Mathuria

IPC: G02B26/08 ,  B81B7/02 ,  G02B26/10 ,  G11C5/06 ,  G11C11/413 ,  H04N9/31

CPC classification number: H04N9/312 ,  B81B7/02 ,  G02B26/0816 ,  G02B26/0833 ,  G02B26/105 ,  G11C5/063 ,  G11C11/413 ,  H04N9/3152 ,  B81B2201/042 ,  B81B2201/07

Abstract: In a described example, a device includes: a semiconductor substrate; a memory array on the semiconductor substrate, the memory array comprising rows and columns of memory cells in a Manhattan pattern, the memory cells having a pitch in a direction along the columns; and an array of micromirrors in a diamond pattern over the memory cells, the micromirrors coupled to corresponding memory cells, the micromirrors having a diagonal pitch length in the direction along the columns that is between 1.8 times the pitch and 2.2 times the pitch.

公开(公告)号：US20220224868A1

公开(公告)日：2022-07-14

申请号：US17146363

申请日：2021-01-11

Applicant: Texas Instruments Incorporated

Inventor： Noah Alan Robb ,  Harsh Dinesh Jhaveri ,  Priyankar Mathuria

IPC: H04N9/31 ,  B81B7/02 ,  G11C11/413 ,  G11C5/06 ,  G02B26/08

Abstract: In a described example, a device includes: a semiconductor substrate; a memory array on the semiconductor substrate, the memory array comprising rows and columns of memory cells in a Manhattan pattern, the memory cells having a pitch in a direction along the columns; and an array of micromirrors in a diamond pattern over the memory cells, the micromirrors coupled to corresponding memory cells, the micromirrors having a diagonal pitch length in the direction along the columns that is between 1.8 times the pitch and 2.2 times the pitch.