Abstract:
A method of manufacturing semiconductor circuits seeks timing closure on a preliminarily select, placed and routed set of cells using a delay for each cell as derated by a derate value obtained from a timing model table having a derate value corresponding to a circuit path depth in the netlist. The derate value for a predetermined number of circuit path depths below k are identical. The derate values are monotonically decreasing for increasing circuit depths in a range between 1.0 and 1.5. Separate timing model tables with differing identical values can be employed for standard and clock tree cells.
Abstract:
Methods for testing an application specific integrated circuit (ASIC). A set of representations is created that overlays power density information and clock gate physical locations of a set of clock gates in a critical sub-chip of the ASIC for test mode power analysis. The set of representations are further grouped in the sub-chip into various groups based on overlapping of the set of representations. Then, a set of test control signals is generated corresponding to each of the set of clock gates during at-speed test mode of operation such that each clock gate with overlapping representations receive different test control signals. Further, patterns are generated using a virtual constraint function to selectively enable the set of test control signals such that the set of test control signals are not activated simultaneously.
Abstract:
A method of manufacturing a system on a chip and a system on a chip including a set of pre-designed modules. These modules are place on a semiconductor and connecting by a set of busses formed according to a set of design rules specifying tracks having a minimum size of conductors and a minimum spacing between conductors. The busses are routed in a preferred direction. The busses include minimum size conductors at alternate tracks within a selected metal layer of the semiconductor and minimum size conductors at alternate tracks in a different metal layer. The conductors in the different metal layer are connected to corresponding connectors in the selected metal layer by vias. Shields of conductors not connected to the bus may be included in tracks not including bus conductors.
Abstract:
Methods for testing an application specific integrated circuit (ASIC). A set of representations is created that overlays power density information and clock gate physical locations of a set of clock gates in a critical sub-chip of the ASIC for test mode power analysis. The set of representations are further grouped in the sub-chip into various groups based on overlapping of the set of representations. Then, a set of test control signals is generated corresponding to each of the set of clock gates during at-speed test mode of operation such that each clock gate with overlapping representations receive different test control signals. Further, patterns are generated using a virtual constraint function to selectively enable the set of test control signals such that the set of test control signals are not activated simultaneously.
Abstract:
A method of manufacturing semiconductor circuits seeks timing closure on a preliminarily select, placed and routed set of cells using a delay for each cell as derated by a derate value obtained from a timing model table having a derate value corresponding to a circuit path depth in the netlist. The derate value for a predetermined number of circuit path depths below k are identical. The derate values are monotonically decreasing for increasing circuit depths in a range between 1.0 and 1.5. Separate timing model tables with differing identical values can be employed for standard and clock tree cells.
Abstract:
A method of manufacturing a system on a chip and a system on a chip including a set of pre-designed modules. These modules are place on a semiconductor and connecting by a set of busses formed according to a set of design rules specifying tracks having a minimum size of conductors and a minimum spacing between conductors. The busses are routed in a preferred direction. The busses include minimum size conductors at alternate tracks within a selected metal layer of the semiconductor and minimum size conductors at alternate tracks in a different metal layer. The conductors in the different metal layer are connected to corresponding connectors in the selected metal layer by vias. Shields of conductors not connected to the bus may be included in tracks not including bus conductors.