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    High voltage level shifter with short propagation delay
    1.
    发明授权
    High voltage level shifter with short propagation delay 有权

    公开(公告)号：US10230372B2

    公开(公告)日：2019-03-12

    申请号：US15959176

    申请日：2018-04-21

    Applicant: Texas Instruments Incorporated

    Inventor： Danyang Zhu ,  Jie Feng ,  Xiaonan Wang ,  Ball Fan

    IPC: H03K19/0185 ,  H03K5/003 ,  H03K19/0175 ,  H03K5/19 ,  H03K17/0412

    Abstract: A lever shifter includes an output driver and a high-side gate driver. The high-side gate driver is configured to drive the high-side output transistor, and is coupled to an on pulse signal line that conducts an on pulse, and is coupled to an off pulse signal line that conducts an off pulse. The high-side gate driver includes a blocking circuit configured to enable generation of a drive signal to the high-side output transistor based on a voltage of a first of the on or off pulse signal line being greater than a first predetermined amount and a voltage of a second of the on or off signal line being less than a second predetermined amount.

    High voltage level shifter with short propagation delay
    3.
    发明授权
    High voltage level shifter with short propagation delay 有权

    公开(公告)号：US10374606B2

    公开(公告)日：2019-08-06

    申请号：US16260428

    申请日：2019-01-29

    Applicant: Texas Instruments Incorporated

    Inventor： Danyang Zhu ,  Jie Feng ,  Xiaonan Wang ,  Ball Fan

    IPC: H03K19/0185 ,  H03K5/19 ,  H03K19/0175 ,  H03K17/0412 ,  H03K5/003

    Abstract: A lever shifter includes an output driver and a high-side gate driver. The high-side gate driver is configured to drive the high-side output transistor, and is coupled to an on pulse signal line that conducts an on pulse, and is coupled to an off pulse signal line that conducts an off pulse. The high-side gate driver includes a blocking circuit configured to enable generation of a drive signal to the high-side output transistor based on a voltage of a first of the on or off pulse signal line being greater than a first predetermined amount and a voltage of a second of the on or off signal line being less than a second predetermined amount.

    Bootstrap diode circuits
    5.
    发明授权
    Bootstrap diode circuits 有权

    公开(公告)号：US11050420B2

    公开(公告)日：2021-06-29

    申请号：US15879231

    申请日：2018-01-24

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Rajarshi Mukhopadhyay ,  Nathan Schemm ,  Xiaonan Wang

    IPC: H03K17/74 ,  G05F1/46 ,  H03K5/24

    Abstract: In described examples, bootstrap diode circuits include a first diode having a first diode input coupled to a voltage supply and a first diode output. Described bootstrap diode circuits additionally include a second diode having a second diode input coupled to the first diode output and a second diode output and a plurality of zener diodes coupled in series. The series-coupled zener diodes are further coupled in parallel with the second diode.

    BOOTSTRAP DIODE CIRCUITS
    7.
    发明申请
    BOOTSTRAP DIODE CIRCUITS 有权
    引脚二极管电路

    公开(公告)号：US20160359483A1

    公开(公告)日：2016-12-08

    申请号：US14733655

    申请日：2015-06-08

    Applicant: Texas Instruments Incorporated

    Inventor： Rajarshi Mukhopadhyay ,  Nathan Schemm ,  Xiaonan Wang

    IPC: H03K17/74 ,  H03K5/24 ,  G05F1/46

    CPC classification number: H03K17/74 ,  G05F1/46 ,  H03K5/2472 ,  H03K2217/0081

    Abstract: Bootstrap diode circuits are disclosed. Example bootstrap diode circuits disclosed herein include a first diode having a first diode input coupled to a voltage supply and a first diode output. Disclosed bootstrap diode circuits additionally include a second diode having a second diode input coupled to the first diode output and a second diode output and a plurality of zener diodes coupled in series. The plurality of series-coupled zener diodes are further coupled in parallel with the second diode.

    Abstract translation: 自举二极管电路被公开。 本文公开的示例性自举二极管电路包括具有耦合到电压源的第一二极管输入和第一二极管输出的第一二极管。 公开的自举二极管电路还包括具有耦合到第一二极管输出的第二二极管输入和第二二极管输出以及串联耦合的多个齐纳二极管的第二二极管。 多个串联耦合齐纳二极管进一步与第二二极管并联耦合。

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