公开(公告)号：US20150348969A1

公开(公告)日：2015-12-03

申请号：US14725869

申请日：2015-05-29

Applicant: Texas Instruments Incorporation

Inventor： Henry Litzmann Edwards ,  Greg Charles Baldwin

IPC: H01L27/092 ,  H01L29/10 ,  H01L29/12 ,  H01L29/423 ,  H01L21/265 ,  H01L29/66 ,  H01L29/08 ,  H01L29/78

CPC classification number: H01L27/092 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/823475 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/088 ,  H01L27/15 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/1083 ,  H01L29/122 ,  H01L29/41758 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/7391 ,  H01L29/7613 ,  H01L29/775 ,  H01L29/7833 ,  H01L29/7836

Abstract: Methods and apparatus for quantum point contacts. In an arrangement, a quantum point contact device includes at least one well region in a portion of a semiconductor substrate and doped to a first conductivity type; a gate structure disposed on a surface of the semiconductor substrate; the gate structure further comprising a quantum point contact formed in a constricted area, the constricted area having a width and a length arranged so that a maximum dimension is less than a predetermined distance equal to about 35 nanometers; a drain/source region in the well region doped to a second conductivity type opposite the first conductivity type; a source/drain region in the well region doped to the second conductivity type; a first and second lightly doped drain region in the at least one well region. Additional methods and apparatus are disclosed.

Abstract translation: 量子点接触的方法和装置。 在一种布置中，量子点接触装置包括半导体衬底的一部分中的至少一个阱区并掺杂到第一导电类型; 栅极结构，设置在所述半导体衬底的表面上; 栅极结构还包括形成在收缩区域中的量子点接触，所述收缩区域具有布置成使得最大尺寸小于等于约35纳米的预定距离的宽度和长度; 掺杂到与第一导电类型相反的第二导电类型的阱区中的漏极/源极区; 掺杂到第二导电类型的阱区中的源/漏区; 在所述至少一个阱区中的第一和第二轻掺杂漏极区。 公开了附加的方法和装置。