Abstract:
A fiber optic phased array, as well as associated methods and apparatus for controllably adjusting the frequency of the optical signals emitted by a fiber optic phased array, are provided that permit wide band phase control and may be implemented utilizing conventional analog electronics. In this regard, the method and apparatus can independently control the phase of the optical signals propagating through each fiber optic amplifier of the fiber optic phased array, even as large optical phase disturbances occur. As such, the control method and apparatus permit a fiber optic phased array to generate a flat phase front that, in turn, can provide a diffraction limited output laser beam. Alternatively, the control method and apparatus may be designed such that the output signals emitted by an array of fiber optic amplifiers has any other desired phase front, such as to compensate for atmospheric perturbations or the like.
Abstract:
An optical fiber amplifier employing a prism to optimally couple pump energy into the pump core of a dual clad fiber. The optical fiber amplifier consists of a dual clad fiber having an inner (e.g., signal) core, an outer (e.g., pump) core surrounding the inner core, and a cladding layer at least partially surrounding the outer core. Pump energy can be injected into the outer core through the prism located adjacent to the outer core in order to amplify signals propagating through the inner core.
Abstract:
An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (AlxGa1nullx)Inp, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (GaxAl1nullx)yIn1nullyP that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of GaxAl1nullxAs that are epitaxially grown on the multi quantum well active gain region. The output mirror can also include a thin, final layer of GaAs to cap the structure and prevent degradation of the GaxAl1nullxAs layers. The semiconductor laser screen also includes a carrier that is affixed to the output mirror. Further, the laser screen includes a metallic mirror and, in one embodiment, a hybrid metallic-dielectric mirror on the etch stop layer opposite the output mirror. As such, a laser cavity is defined between the output mirror and the metallic mirror. The semiconductor laser screen may be integrated into an electron beam pumped semiconductor laser which forms the basis for a projection display. A fabrication method is also provided.
Abstract translation:描述了电子束泵浦半导体激光屏幕和相关联的制造方法,其提供具有相对长的工作寿命的显示屏,制造成本较低,并且在较低的电子电压和接近室温条件下操作。 激光屏幕包括具有GaInP的量子阱和(Al x Ga 1-x)Inp的势垒层的多量子阱活性增益区域,从而允许在可见红色光谱中操作。 此外,在牺牲衬底上外延生长的第一层是(GaxAl1-x)yIn1-yP的蚀刻停止层,其在牺牲衬底的随后蚀刻期间用作蚀刻停止层,并且还可以用于将腔长度调整为 正确的共振条件。 激光屏幕还包括输出镜,其具有在多量子阱活性增益区上外延生长的两种不同组成的GaxAl1-xAs的交替层。 输出反射镜还可以包括薄的最终的GaAs层,以覆盖该结构并防止GaxAl1-xAs层的劣化。 半导体激光屏幕还包括固定到输出镜的载体。 此外,激光屏幕包括金属镜,并且在一个实施例中,在与输出镜相对的蚀刻停止层上的复合金属 - 电介质镜。 因此,在输出镜和金属镜之间限定激光腔。 半导体激光屏可以集成到形成投影显示基础的电子束泵浦半导体激光器中。 还提供了制造方法。
Abstract:
A laser activated switch includes a substrate, such as a sapphire or a silicon carbide substrate, with two opposed major surfaces including a ground layer on one surface. Extending laterally across the first surface of the substrate, the laser activated switch includes at least one pair of first and second electrically conductive electrodes. Each electrode of the pair of electrodes is spaced apart from one another to thereby define a gap. Additionally, the laser activated switch includes at least one III-nitride-based photoconductor extending laterally across at least part of the surface of the substrate opposite the ground layer, and extending across the gap defined between the pairs of electrodes. Upon being illuminated, the photoconductor becomes conductive and changes the switch from an nulloffnull state to an nullonnull state. In one embodiment, the laser activated switch further includes first and second terminals electrically connected to the first and second electrodes, respectively.