公开(公告)号：US11993864B2

公开(公告)日：2024-05-28

申请号：US17516956

申请日：2021-11-02

申请人： The Johns Hopkins University

发明人： John B. Abraham ,  Brian D. Clader ,  Robert Osiander ,  Cameron A. Gutgsell ,  Dalibor J. Todorovski ,  Scott A. Sperling ,  Jacob E. Epstein ,  Timothy M. Sweeney ,  Elizabeth A. Pogue ,  Tyrel M. McQueen

IPC分类号： C30B33/02 ,  C30B29/36 ,  C30B33/04 ,  G01R33/032

CPC分类号： C30B33/02 ,  C30B29/36 ,  C30B33/04 ,  G01R33/032

摘要： A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects includes irradiating a silicon carbide sample, annealing the irradiated silicon carbide sample in an annealing operation, and quenching the annealed silicon carbide sample. Quenching may include heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects.

公开(公告)号：US20220136135A1

公开(公告)日：2022-05-05

申请号：US17516956

申请日：2021-11-02

申请人： The Johns Hopkins University

发明人： John B. Abraham ,  Brian D. Clader ,  Robert Osiander ,  Cameron A. Gutgsell ,  Dalibor J. Todorovski ,  Scott A. Sperling ,  Jacob E. Epstein ,  Timothy M. Sweeney ,  Elizabeth A. Pogue ,  Tyrel M. McQueen

IPC分类号： C30B33/02 ,  G01R33/032 ,  C30B33/04 ,  C30B29/36

摘要： A method for forming a silicon carbide material with a plurality of negatively charged silicon mono-vacancy defects includes irradiating a silicon carbide sample, annealing the irradiated silicon carbide sample in an annealing operation, and quenching the annealed silicon carbide sample. Quenching may include heating the annealed silicon carbide sample to a maximum temperature and quenching the annealed silicon carbide sample to form the silicon carbide sample with the plurality of negatively charged silicon mono-vacancy defects.