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公开(公告)号：US11905594B2
公开(公告)日：2024-02-20
申请号：US17639490
申请日：2020-09-02
CPC分类号： C23C16/274 , C23C16/272 , C23C16/277 , C23C16/52
摘要： A chemical vapor deposition (CVD) process for producing diamond includes providing a CVD Growth Chamber containing a growth substrate, charging the CVD growth chamber with a source gas mixture that includes a carbon source gas, activating the gas mixture to facilitate growth of diamond on the growth substrate, and providing for a period of diamond growth in a static mode during which the gas mixture is sealed within the CVD growth chamber.
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公开(公告)号：US11798703B2
公开(公告)日：2023-10-24
申请号：US17710062
申请日：2022-03-31
发明人： Thomas Scott , Neil Fox , Liam Payne , Chris Hutson , Hugo Dominguez Andrade
摘要： A radiation powered device includes a first electrode, a second electrode, a semiconductor disposed between the first and second electrodes, and a radioactive source configured to generate a flow of electrons through the semiconductor between the first and second electrodes, wherein the semiconductor comprises diamond material, wherein the radioactive source is embedded within the diamond material, wherein the radioactive source comprises a beta-emitting radioisotope, and atoms of the radioisotope are either substitutionally or interstitially integrated into the diamond material, wherein the diamond material comprises a plurality of regions in the form of layers within a continuous crystal lattice of the diamond material, and wherein at least one layer of the diamond material comprises the radioactive source and at least one layer of the diamond material does not comprise the radioactive source.
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公开(公告)号：US11302456B2
公开(公告)日：2022-04-12
申请号：US16612513
申请日：2018-05-10
发明人： Thomas Scott , Neil Fox , Liam Payne , Chris Hutson , Hugo Dominguez Andrade
摘要： Provided herein is a radiation powered device comprising a semiconductor comprising a diamond material.
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