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    Implantable device using ultra-nanocrystalline diamond
    3.
    发明授权
    Implantable device using ultra-nanocrystalline diamond 有权
    使用超微晶钻石的植入式装置

    公开(公告)号：US08630720B2

    公开(公告)日：2014-01-14

    申请号：US13474003

    申请日：2012-05-17

    申请人： Brian V. Mech ,  Robert J. Greenberg

    发明人： Brian V. Mech ,  Robert J. Greenberg

    IPC分类号： A61N1/00

    CPC分类号： C23C16/274 ,  A61K9/0009 ,  A61N1/0543 ,  A61N1/36046 ,  A61N1/375 ,  C23C16/277 ,  C23C16/278 ,  C23C16/279 ,  H01L23/29 ,  H01L23/3107 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An implantable biocompatible electrical device is uniformly covered with a coating approximately one-micron thick of ultra-nanocrystalline diamond, hermetically sealing the electrical device. Selected electrodes are either left uncovered during coating or uncovered by conventional patterning techniques, allowing the electrodes to be exposed to living tissue and fluids. The ultra-nanocrystalline diamond coating may be doped to create electrically conductive electrodes. These approaches eliminate the need for a hermetically sealed lid or cover to protect electrical circuitry, and thus allow the device to be thinner than otherwise possible. The conformal ultra-nanocrystalline diamond coating uniformly covers the device, providing relief from sharp edges and producing a strong, uniformly thick hermetic coating around sharp edges and on high aspect-ratio parts.

    摘要翻译： 植入式生物相容性电气装置均匀地覆盖有大约1微米厚的超微晶金刚石的涂层，气密地密封电气装置。 所选择的电极在涂覆期间未被覆盖或者通过常规图案化技术未被覆盖，允许电极暴露于活组织和流体。 超级纳米晶体金刚石涂层可以被掺杂以产生导电电极。 这些方法消除了对密封的盖或盖的需要以保护电路，并且因此允许该装置比其它可能的更薄。 保形的超纳米晶金刚石涂层均匀地覆盖了该装置，从尖锐的边缘提供浮雕，并在尖锐的边缘和高纵横比的部分上产生强而均匀的厚的密封涂层。

    CARBON MATERIAL COVERED WITH DIAMOND THIN FILM AND METHOD OF MANUFACTURING SAME
    4.
    发明申请
    CARBON MATERIAL COVERED WITH DIAMOND THIN FILM AND METHOD OF MANUFACTURING SAME 有权
    具有金刚石薄膜的碳材料及其制造方法

    公开(公告)号：US20120094117A1

    公开(公告)日：2012-04-19

    申请号：US13260065

    申请日：2010-03-19

    申请人： Takanori Kawano ,  Rie Tao

    发明人： Takanori Kawano ,  Rie Tao

    IPC分类号： B32B3/00 ,  C23C16/44 ,  C23C16/27

    CPC分类号： C01B31/06 ,  C01B32/25 ,  C23C16/0272 ,  C23C16/271 ,  C23C16/277 ,  Y10T428/273

    摘要： A carbon material and a method of manufacturing the carbon material are provided. By affixing diamond particles onto a carbonaceous substrate in a condition in which etching caused by hydrogen radicals is unlikely to occur, the substrate etching rate can be suppressed, and the carbon material is allowed to have a diamond thin film having excellent adhesion capability. The carbon material has a carbonaceous substrate showing a weight decrease under a diamond synthesis condition, diamond particles disposed on a surface of the carbonaceous substrate, and a diamond layer having the diamond particles as seeds. The weight of the diamond particles per unit area is set to from 1.0×10−4 g/cm2 to less than 3.0×10−3 g/cm2.

    摘要翻译： 提供碳材料和碳材料的制造方法。 通过在不可能发生由氢自由基引起的蚀刻的条件下将金刚石颗粒固定在碳质基材上，可以抑制基板蚀刻速率，并且使碳材料具有优异的粘附性能的金刚石薄膜。 碳材料具有显示在金刚石合成条件下重量减少的碳质基材，设置在碳质基材的表面上的金刚石颗粒和具有金刚石颗粒作为晶种的金刚石层。 每单位面积的金刚石颗粒的重量为1.0×10 -4 g / cm 2至小于3.0×10 -3 g / cm 2。

    Ultratough CVD single crystal diamond and three dimensional growth thereof
    6.
    发明授权
    Ultratough CVD single crystal diamond and three dimensional growth thereof 有权
    Ultratough CVD单晶金刚石及其三维生长

    公开(公告)号：US07594968B2

    公开(公告)日：2009-09-29

    申请号：US11222224

    申请日：2005-09-09

    申请人： Russell J. Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan

    发明人： Russell J. Hemley ,  Ho-kwang Mao ,  Chih-shiue Yan

    IPC分类号： C30B29/04

    CPC分类号： C30B25/105 ,  C23C16/274 ,  C23C16/277 ,  C23C16/279 ,  C30B29/04

    摘要： The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

    摘要翻译： 本发明涉及通过微波等离子体化学气相沉积生长的具有至少约30MPa m1 / 2的韧性的单晶金刚石。 本发明还涉及具有至少约30MPa m1 / 2的韧性的单晶金刚石的制造方法。 本发明还涉及在单晶金刚石基底上三维制造单晶CVD金刚石的方法。

    PROGRAMMED HIGH SPEED DEPOSITION OF AMORPHOUS, NANOCRYSTALLINE, MICROCRYSTALLINE, OR POLYCRYSTALLINE MATERIALS HAVING LOW INTRINSIC DEFECT DENSITY
    7.
    发明申请
    PROGRAMMED HIGH SPEED DEPOSITION OF AMORPHOUS, NANOCRYSTALLINE, MICROCRYSTALLINE, OR POLYCRYSTALLINE MATERIALS HAVING LOW INTRINSIC DEFECT DENSITY 审中-公开

    公开(公告)号：US20090050058A1

    公开(公告)日：2009-02-26

    申请号：US12199730

    申请日：2008-08-27

    申请人： Stanford R. Ovshinsky

    发明人： Stanford R. Ovshinsky

    IPC分类号： C23C16/54

    CPC分类号： C23C16/24 ,  C23C16/27 ,  C23C16/277 ,  C23C16/452 ,  C23C16/545 ,  H01J37/32357 ,  H05H1/46

    摘要： A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects. The apparatus has a control for the entire manufacturing process that includes a diagnostic element and a feedback control element to permit process programming to achieve and maintain the optimal distribution of one or more preferred species throughout the deposition process.