公开(公告)号：US20220262848A1

公开(公告)日：2022-08-18

申请号：US17597698

申请日：2020-07-14

Applicant: The University of Sheffield

Inventor： Tao Wang

IPC: H01L27/15

Abstract: A method of producing a light emitting diode (LED) array comprises: forming a semiconductor layer (100) of group III nitride material; forming a dielectric mask layer (104) over the semiconductor layer, the dielectric mask layer having an array of holes (106) through it each exposing an area of the semiconductor layer; and growing an LED structure (108) in each of the holes. The array of holes comprises a first set of holes (106a) each having a first cross sectional area and a second set of holes (106b) each having a second cross sectional area different from the first cross sectional area.

公开(公告)号：US20220278165A1

公开(公告)日：2022-09-01

申请号：US17597699

申请日：2020-07-14

Applicant: The University of Sheffield

Inventor： Tao Wang

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/60

Abstract: A method of producing a light emitting diode (LED) array comprises: forming a plurality of layers (100, 101, 103) of semiconductor material; forming a dielectric mask layer (104) over the plurality of layers, the dielectric mask layer having an array of holes (106) through it each exposing an area of one of the layers of semiconductor material, and growing an LED structure (110, 112, 114) in each of the holes arranged to emit light over a range of wavelengths. At least some of the plurality layers (101) form a distributed Bragg reflector (DBR) arranged to reflect light of at least some of said range of wavelengths.

公开(公告)号：US20210335884A1

公开(公告)日：2021-10-28

申请号：US17250997

申请日：2019-10-08

Applicant: The University of Sheffield

Inventor： Tao Wang

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38

Abstract: A method of producing a light emitting diode (LED) array comprises: forming a semiconductor layer (100) of group III nitride material; forming a dielectric mask layer (104) over the semiconductor layer, the dielectric mask layer having an array of holes through it each exposing an area of the semiconductor layer; and growing an LED structure (108) in each of the holes.