公开(公告)号：US10967463B2

公开(公告)日：2021-04-06

申请号：US16381445

申请日：2019-04-11

申请人： The University of Toledo

发明人： Vamsi Borra ,  Daniel G. Georgiev ,  Srikanth Itapu

IPC分类号： H01L23/50 ,  B23K35/26 ,  B23K1/00 ,  H05K1/09 ,  B23K101/42 ,  B23K103/00 ,  B23K101/40 ,  H05K3/16 ,  H05K3/14

摘要： Semiconductor layers useable for minimizing or preventing the growth of metal whiskers, as well as devices and methods utilizing the same and kits for making the same, are described. The semiconductor layers may be nickel oxide layers. In some embodiments, an electronic device may include a substrate, a first metal layer on the substrate, a semiconductor layer comprising NiO on the first metal layer, and a second metal layer on the semiconductor layer. In some embodiments, an electronic device may include a substrate, a semiconductor layer comprising NiO directly on the substrate, and a metal layer directly on the semiconductor layer. A method for making an electronic device may include depositing a semiconductor layer comprising NiO on a substrate, and depositing a metal layer on the semiconductor layer, where the semiconductor layer substantially prevents the growth of whiskers on the metal layer.

公开(公告)号：US20190314937A1

公开(公告)日：2019-10-17

申请号：US16381445

申请日：2019-04-11

申请人： The University of Toledo

发明人： Vamsi Borra ,  Daniel G. Georgiev ,  Srikanth Itapu

IPC分类号： B23K35/26 ,  B23K1/00 ,  H05K1/09 ,  H01L23/50

摘要： Semiconductor layers useable for minimizing or preventing the growth of metal whiskers, as well as devices and methods utilizing the same and kits for making the same, are described.