Method for the selective oxidation of silicon nanoparticle semiconductor films in the presence of titanium
    1.
    发明授权
    Method for the selective oxidation of silicon nanoparticle semiconductor films in the presence of titanium 有权
    在钛存在下选择性氧化硅纳米颗粒半导体膜的方法

    公开(公告)号:US08691672B2

    公开(公告)日:2014-04-08

    申请号:US13433072

    申请日:2012-03-28

    IPC分类号: B82Y30/00

    摘要: A method is provided for consuming oxides in a silicon (Si) nanoparticle film. The method forms a colloidal solution film of Si nanoparticles overlying a substrate. The Si nanoparticle colloidal solution film is annealed at a high temperature in the presence of titanium (Ti). In response to the annealing, Si oxide is consumed in a resultant Si nanoparticle film. In one aspect, the consuming the Si oxide in the Si nanoparticle film includes forming Ti oxide in the Si nanoparticle film. Also in response to a low temperature annealing, solvents are evaporated in the colloidal solution film of Si nanoparticles. Si and Ti oxide molecules are sintered in the Si nanoparticle film in response to the high temperature annealing.

    摘要翻译: 提供一种消耗硅(Si)纳米颗粒膜中的氧化物的方法。 该方法形成了覆盖衬底的Si纳米颗粒的胶体溶液膜。 在钛(Ti)存在下,在高温下对Si纳米颗粒胶体溶液膜进行退火。 响应于退火,在所得Si纳米颗粒膜中消耗Si氧化物。 在一个方面,消耗Si纳米颗粒膜中的Si氧化物包括在Si纳米颗粒膜中形成Ti氧化物。 另外响应于低温退火,溶剂在Si纳米颗粒的胶体溶液膜中蒸发。 响应于高温退火,Si和Ti氧化物分子在Si纳米颗粒膜中烧结。

    Method for Consuming Silicon Nanoparticle Film Oxidation
    2.
    发明申请
    Method for Consuming Silicon Nanoparticle Film Oxidation 有权
    消耗硅纳米颗粒膜氧化的方法

    公开(公告)号:US20130256675A1

    公开(公告)日:2013-10-03

    申请号:US13433072

    申请日:2012-03-28

    摘要: A method is provided for consuming oxides in a silicon (Si) nanoparticle film. The method forms a colloidal solution film of Si nanoparticles overlying a substrate. The Si nanoparticle colloidal solution film is annealed at a high temperature in the presence of titanium (Ti). In response to the annealing, Si oxide is consumed in a resultant Si nanoparticle film. In one aspect, the consuming the Si oxide in the Si nanoparticle film includes forming Ti oxide in the Si nanoparticle film. Also in response to a low temperature annealing, solvents are evaporated in the colloidal solution film of Si nanoparticles. Si and Ti oxide molecules are sintered in the Si nanoparticle film in response to the high temperature annealing.

    摘要翻译: 提供一种消耗硅(Si)纳米颗粒膜中的氧化物的方法。 该方法形成了覆盖衬底的Si纳米颗粒的胶体溶液膜。 在钛(Ti)存在下,在高温下对Si纳米颗粒胶体溶液膜进行退火。 响应于退火,在所得Si纳米颗粒膜中消耗Si氧化物。 在一个方面,消耗Si纳米颗粒膜中的Si氧化物包括在Si纳米颗粒膜中形成Ti氧化物。 另外响应于低温退火,溶剂在Si纳米颗粒的胶体溶液膜中蒸发。 响应于高温退火,Si和Ti氧化物分子在Si纳米颗粒膜中烧结。

    Tandem Dye-Sensitized Solar Cell and Method for Making Same
    3.
    发明申请
    Tandem Dye-Sensitized Solar Cell and Method for Making Same 审中-公开
    串联染料敏化太阳能电池及其制造方法

    公开(公告)号:US20120073635A1

    公开(公告)日:2012-03-29

    申请号:US12892779

    申请日:2010-09-28

    摘要: A method is provided for forming a tandem dye-sensitized solar cell (DSC) using a bonding process. The method forms a first photovoltaic (PV) cell including a cathode, a first dye, and an anode. A second PV cell is also formed including a cathode, a second dye, and an anode. The second PV cell anode is bonded to the first PV cell cathode, at a temperature of less than 100 degrees C., using a transparent conductive adhesive. In response to the bonding, an internal series electrical connection is formed between the first PV cell and the second PV cell. In one aspect, the second PV cell is formed from a first titanium oxide (TiO2) nanotube (TNT) layer anode.

    摘要翻译: 提供了使用接合工艺形成串联染料敏化太阳能电池(DSC)的方法。 该方法形成包括阴极,第一染料和阳极的第一光伏(PV)电池。 还形成第二PV电池,包括阴极,第二染料和阳极。 使用透明导电粘合剂,第二PV电池阳极在小于100摄氏度的温度下结合到第一PV电池阴极。 响应于接合,在第一PV电池和第二PV电池之间形成内部串联电连接。 一方面,第二PV电池由第一氧化钛(TiO 2)纳米管(TNT)层阳极形成。