公开(公告)号：US20170210857A1

公开(公告)日：2017-07-27

申请号：US15326632

申请日：2015-06-30

Applicant: Thin Film Electronics ASA

Inventor： Masahisa ENDO ,  Gun SON ,  Yuichi GOTO ,  Kentaro NAGAI

IPC: C08G77/60 ,  C09D5/24 ,  B05D3/02 ,  C01B33/021 ,  C01B33/04 ,  H01L21/02 ,  C09D183/16

CPC classification number: C08G77/60 ,  B05D3/0254 ,  C01B33/02 ,  C01B33/021 ,  C01B33/04 ,  C03C17/22 ,  C09D5/24 ,  C09D183/16 ,  H01L21/02532

Abstract: There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100° C. to 425° C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex. The palladium-immobilized catalyst may be formed by microencapsulating a zero-valent palladium complex or a divalent palladium compound with a functional polystyrene. The zero-valent palladium complex may be a tetrakis(triphenylphosphine)palladium (0) complex.

公开(公告)号：US20170203970A1

公开(公告)日：2017-07-20

申请号：US15326634

申请日：2015-07-14

Applicant: Thin Film Electronics ASA

Inventor： Yuichi GOTO ,  Kentaro NAGAI ,  Masahisa ENDO ,  Gun SON

IPC: C01B33/04

CPC classification number: C01B33/04

Abstract: There is provided a cyclic silane having high purity, particularly cyclopentasilane having high purity, and a composition containing a polysilane obtained by polymerization of the cyclic silane which a highly conductive and good silicon thin film is formed by applying the composition in a form of a coating-type polysilane composition to a substrate, followed by baking. A method for producing a cyclic silane of Formula (3): (SiH2)n   Formula (3) (wherein n is an integer of 4 to 6) comprising an (A) step of reacting a cyclic silane compound of Formula (1): (SiR1R2)n   Formula (1) (wherein R1 and R2 are each a hydrogen atom, a C1-6 alkyl group, or an optionally substituted phenyl group, and n is an integer of 4 to 6) with hydrogen halide in cyclohexane in the presence of aluminum halide to obtain a solution containing a cyclic silane compound of Formula (2): (SiR3R4)n   Formula (2) (wherein R3 and R4 are each a halogen atom, and n is an integer of 4 to 6), and then distilling the solution to obtain a cyclic silane compound of Formula (2), and a (B) step of dissolving the cyclic silane compound of Formula (2) in an organic solvent, and reducing the cyclic silane compound of Formula (2) with hydrogen or lithium aluminum hydride. The distillation at the (A) step may be carried out at a temperature of 40 to 80° C. under a reduced pressure of 0 to 30 Torr.