公开(公告)号：US20170313592A1

公开(公告)日：2017-11-02

申请号：US15523921

申请日：2015-10-13

Applicant: Thin Film Electronics ASA

Inventor： Yuichi GOTO ,  Masahisa ENDO ,  Gun SON ,  Kentaro NEGAI

IPC: C01B33/113 ,  C01B33/04 ,  B01J23/46

CPC classification number: C01B33/113 ,  B01J23/464 ,  C01B33/04 ,  C08G77/60 ,  H01L21/0217 ,  H01L21/02214 ,  H01L21/02282

Abstract: A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si—H groups)/(Si—H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.