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公开(公告)号:US20120273462A1
公开(公告)日:2012-11-01
申请号:US13095956
申请日:2011-04-28
CPC分类号: H01L21/67086 , H01L21/67017 , H01L21/6704 , H01L21/67057 , H01L21/67075
摘要: An etching device is provided, the etching device including a process chamber including an etchant, a structure configured to provide a laminar flow of the etchant, and a workpiece handler configured to move a workpiece through the laminar flow of the etchant along a predefined track.
摘要翻译: 提供了一种蚀刻装置,该蚀刻装置包括一个包括蚀刻剂的处理室,被配置为提供蚀刻剂层流的结构,以及一个被配置为沿着预定轨迹使工件移动通过蚀刻剂的层流的工件处理器。
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公开(公告)号:US09318358B2
公开(公告)日:2016-04-19
申请号:US13095956
申请日:2011-04-28
CPC分类号: H01L21/67086 , H01L21/67017 , H01L21/6704 , H01L21/67057 , H01L21/67075
摘要: An etching device is provided, the etching device including a process chamber including an etchant, a structure configured to provide a laminar flow of the etchant, and a workpiece handler configured to move a workpiece through the laminar flow of the etchant along a predefined track.
摘要翻译: 提供了一种蚀刻装置,该蚀刻装置包括一个包括蚀刻剂的处理室,被配置为提供蚀刻剂层流的结构,以及一个被配置为沿着预定轨迹使工件移动通过蚀刻剂的层流的工件处理器。
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