摘要:
A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.
摘要:
A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.
摘要:
A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.
摘要:
A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.
摘要:
A fuel injection pump 100 comprises a thermoelement CSD 47 for advancing injection timing in a cold temperature condition. The CSD 47 uses a piston 46 for opening and closing a sub port 42 formed in a plunger barrel 8. An electronic governor 2 is provided with a mechanism for decreasing an injected fuel quantity when an engine starts in a cold temperature condition. The mechanism shifts a rack position in a fuel-decrease direction in a cold temperature condition, and switches the rack position to a normal position in a normal temperature condition. A timing TR for shifting the rack position is set before or simultaneous to a timing TC for switch-off of the CSD 47.
摘要:
The directional coupler switch is configured by a parallel waveguide including a first region which is subjected to a nonlinear action and a second region which is not subjected to a nonlinear action. A dispersion relationship of the first region is varied due to the nonlinear action to switch over an exit of light entering from an input side to cause the switch to function as an optical switch. A dispersion curve of the first region has: a region of a constant frequency in one of an even mode and an odd mode which are two kinds of eigen modes of the parallel waveguide; and a region in which gradients of the two eigen modes at frequencies belonging to a region other than the region of a constant frequency are substantially equal to each other. The gradients of the two kinds of eigen modes indicate monotone decreasing or monotone increasing.
摘要:
A limiter is connected with the output of a PLL to limit the amplitude of the output from the PLL. The output from limiter is supplied to a voltage-controlled oscillator (VCXO). The limiter determines the difference between the input signal and the output signal. If the difference exceeds a predetermined value, the change in the output from the limiter is limited to the predetermined value. If the difference does not exceed the predetermined value, the change in the output is considered to be a difference value.
摘要:
An automatic gain control circuit which is provided in a demodulation section of a modem to adjust the loop gain so that the level of a band-limited receive signal may have a predetermined reference value and to output the receive signal to an automatic equalization section of the modem. The automatic gain control circuit is improved in that, even when a disturbance of the circuit such as a gain hit or a drop-out occurs, regular communication can be continued without requiring a data mode leading-in operation. The automatic gain control circuit includes a reference value setting unit for generating a reference value, an error calculation unit for determining an error signal between the receive signal and the reference value, a receive level variation correcting controlling force setting unit for setting a receive level variation correcting controlling force to be added to the error signal, an error signal correction unit for correcting the error signal, an error signal averaging unit for averaging the corrected error signal and a feedback unit for feeding back, as the receive signal, the averaged corrected error signal. The receive level variation correcting controlling force to be set by the receive level variation correcting controlling force setting unit is varied in response to the error signal.
摘要:
An object of the present invention is to provide an immunomodulating agent in gut that can be ingested continuously in daily diet without adverse side effect. The object is attained by providing an immunomodulating agent in gut comprising a cyclic tetrasaccharide as an effective ingredient.
摘要:
A pattern formation method and method and apparatus for production of a semiconductor device using that method which irradiate light from a light source to a phase shifting mask through a fly's-eye lens comprised of an assembly of a plurality of lenses, transfer the pattern of the phase shifting mask onto the substrate, and form the pattern on the substrate, wherein the amount of light made incident upon the center portion of the fly's-eye lens is lowered by 2 to 90 percent, preferably 10 to 90 percent, further preferably 20 to 80 percent or 20 to 60 percent, relative to the amount of light incident upon the peripheral portion of the fly's-eye lens.