Semiconductor device containing Si, O and N anti-reflective layer
    1.
    发明授权
    Semiconductor device containing Si, O and N anti-reflective layer 失效
    含有Si,O和N抗反射层的半导体器件

    公开(公告)号:US5698352A

    公开(公告)日:1997-12-16

    申请号:US820180

    申请日:1997-03-19

    摘要: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.

    摘要翻译: 通过用单色光曝光形成抗蚀剂图案来确定抗反射层的最佳条件的方法,在这些条件下形成抗反射层,并使用新的抗反射层形成抗蚀剂图案。 该方法包括:(I)使用抗反射层的光学条件作为参数,形成关于可选膜厚度的光致抗蚀剂的吸收光量的等轮线,(II)进行与( 对于多个抗蚀剂膜厚度,(III)找到相对于所获得的每个迹线的吸收光量的公共区域,从而确定抗反射层的光学条件,(IV)施加相同的光刻条件 改变抗反射层的状态,从而确定抗反射层的光学条件,和(V)确定最佳光学条件,例如抗反射层的种类和厚度, 防反射层的一定条件。

    Method of forming a resist pattern using an anti-reflective layer
    2.
    发明授权
    Method of forming a resist pattern using an anti-reflective layer 失效
    使用抗反射层形成抗蚀剂图案的方法

    公开(公告)号:US5472827A

    公开(公告)日:1995-12-05

    申请号:US175299

    申请日:1993-12-29

    摘要: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.

    摘要翻译: 通过用单色光曝光形成抗蚀剂图案来确定抗反射层的最佳条件的方法,在这些条件下形成抗反射层,并使用新的抗反射层形成抗蚀剂图案。 该方法包括:(I)使用抗反射层的光学条件作为参数,形成关于可选膜厚度的光致抗蚀剂的吸收光量的等轮线,(II)进行与( 对于多个抗蚀剂膜厚度,(III)找到相对于所获得的每个迹线的吸收光量的公共区域,从而确定抗反射层的光学条件,(IV)施加相同的光刻条件 改变抗反射层的状态,从而确定抗反射层的光学条件,和(V)确定最佳光学条件,例如抗反射层的种类和厚度, 防反射层的一定条件。

    Anti-reflective layer used to form a semiconductor device
    3.
    发明授权
    Anti-reflective layer used to form a semiconductor device 失效
    用于形成半导体器件的抗反射层

    公开(公告)号:US5641607A

    公开(公告)日:1997-06-24

    申请号:US535377

    申请日:1995-09-28

    摘要: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.

    摘要翻译: 通过用单色光曝光形成抗蚀剂图案来确定抗反射层的最佳条件的方法,在这些条件下形成抗反射层,并使用新的抗反射层形成抗蚀剂图案。 该方法包括:(I)使用抗反射层的光学条件作为参数,形成关于可选膜厚度的光致抗蚀剂的吸收光量的等轮线,(II)进行与( 对于多个抗蚀剂膜厚度,(III)找到相对于所获得的每个迹线的吸收光量的公共区域,从而确定抗反射层的光学条件,(IV)施加相同的光刻条件 改变抗反射层的状态,从而确定抗反射层的光学条件,和(V)确定最佳光学条件,例如抗反射层的种类和厚度, 防反射层的一定条件。

    Method of forming a photoresist pattern using an anti-reflective
    4.
    发明授权
    Method of forming a photoresist pattern using an anti-reflective 失效
    使用防反射膜形成光致抗蚀剂图案的方法

    公开(公告)号:US5648202A

    公开(公告)日:1997-07-15

    申请号:US535965

    申请日:1995-09-28

    摘要: A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.

    摘要翻译: 通过用单色光曝光形成抗蚀剂图案来确定抗反射层的最佳条件的方法,在这些条件下形成抗反射层,并使用新颖的抗反射层形成抗蚀剂图案。 该方法包括:(I)使用抗反射层的光学条件作为参数,形成关于可选膜厚度的光致抗蚀剂的吸收光量的等轮线,(II)进行与( 对于多个抗蚀剂膜厚度,(III)找到相对于所获得的每个迹线的吸收光量的公共区域,从而确定抗反射层的光学条件,(IV)施加相同的光刻条件 改变抗反射层的状态,从而确定抗反射层的光学条件,和(V)确定最佳光学条件,例如抗反射层的种类和厚度, 防反射层的一定条件。

    Fuel injection pump
    5.
    发明授权
    Fuel injection pump 有权
    燃油喷射泵

    公开(公告)号:US07350503B2

    公开(公告)日:2008-04-01

    申请号:US10535625

    申请日:2003-11-14

    摘要: A fuel injection pump 100 comprises a thermoelement CSD 47 for advancing injection timing in a cold temperature condition. The CSD 47 uses a piston 46 for opening and closing a sub port 42 formed in a plunger barrel 8. An electronic governor 2 is provided with a mechanism for decreasing an injected fuel quantity when an engine starts in a cold temperature condition. The mechanism shifts a rack position in a fuel-decrease direction in a cold temperature condition, and switches the rack position to a normal position in a normal temperature condition. A timing TR for shifting the rack position is set before or simultaneous to a timing TC for switch-off of the CSD 47.

    摘要翻译: 燃料喷射泵100包括用于在冷温度条件下提前喷射正时的热电偶CSD47。 CSD47使用活塞46打开和关闭形成在柱塞筒8中的副口42.电子调速器2设置有用于在发动机在低温条件下起动时减少喷射燃料量的机构。 该机构在冷温度条件下使燃料减少方向上的齿条位置偏移,并且在正常温度条件下将齿条位置切换到正常位置。 用于移动机架位置的定时TR设置在CSD 47的关闭的定时TC之前或同时。

    Directional coupler switch
    6.
    发明申请
    Directional coupler switch 失效
    定向耦合器开关

    公开(公告)号:US20060188199A1

    公开(公告)日:2006-08-24

    申请号:US11209856

    申请日:2005-08-24

    IPC分类号: G02B6/26 G02B6/42

    CPC分类号: G02B6/2804 G02B6/12007

    摘要: The directional coupler switch is configured by a parallel waveguide including a first region which is subjected to a nonlinear action and a second region which is not subjected to a nonlinear action. A dispersion relationship of the first region is varied due to the nonlinear action to switch over an exit of light entering from an input side to cause the switch to function as an optical switch. A dispersion curve of the first region has: a region of a constant frequency in one of an even mode and an odd mode which are two kinds of eigen modes of the parallel waveguide; and a region in which gradients of the two eigen modes at frequencies belonging to a region other than the region of a constant frequency are substantially equal to each other. The gradients of the two kinds of eigen modes indicate monotone decreasing or monotone increasing.

    摘要翻译: 定向耦合器开关由包括经受非线性动作的第一区域和不经受非线性动作的第二区域的平行波导构成。 第一区域的色散关系由于非线性动作而变化,以切换从输入侧进入的光的出射,从而使开关用作光学开关。 第一区域的色散曲线具有:作为平行波导的两种本征模式的偶数模式和奇数模式之一的恒定频率的区域; 以及属于不同频率区域以外的区域的两个本征模式的梯度基本相等的区域。 两种本征模式的梯度表示单调递减或单调递增。

    PLL controller, method of PLL control, and limiter
    7.
    发明授权
    PLL controller, method of PLL control, and limiter 失效
    PLL控制器,PLL控制方法和限幅器

    公开(公告)号:US06448861B2

    公开(公告)日:2002-09-10

    申请号:US09788841

    申请日:2001-02-20

    IPC分类号: H03L706

    CPC分类号: H03L7/091 H03L7/093

    摘要: A limiter is connected with the output of a PLL to limit the amplitude of the output from the PLL. The output from limiter is supplied to a voltage-controlled oscillator (VCXO). The limiter determines the difference between the input signal and the output signal. If the difference exceeds a predetermined value, the change in the output from the limiter is limited to the predetermined value. If the difference does not exceed the predetermined value, the change in the output is considered to be a difference value.

    摘要翻译: 限幅器与PLL的输出端相连以限制PLL输出的幅度。 限幅器的输出被提供给压控振荡器(VCXO)。 限幅器确定输入信号和输出信号之间的差异。 如果差异超过预定值,则限制器的输出的变化被限制为预定值。 如果该差异不超过预定值,则输出的变化被认为是差值。

    Automatic gain control circuit for a demodulation section of a modem
    8.
    发明授权
    Automatic gain control circuit for a demodulation section of a modem 失效
    用于调制解调器解调部分的自动增益控制电路

    公开(公告)号:US5448595A

    公开(公告)日:1995-09-05

    申请号:US109044

    申请日:1993-08-19

    CPC分类号: H03G3/3052 H03G3/3042

    摘要: An automatic gain control circuit which is provided in a demodulation section of a modem to adjust the loop gain so that the level of a band-limited receive signal may have a predetermined reference value and to output the receive signal to an automatic equalization section of the modem. The automatic gain control circuit is improved in that, even when a disturbance of the circuit such as a gain hit or a drop-out occurs, regular communication can be continued without requiring a data mode leading-in operation. The automatic gain control circuit includes a reference value setting unit for generating a reference value, an error calculation unit for determining an error signal between the receive signal and the reference value, a receive level variation correcting controlling force setting unit for setting a receive level variation correcting controlling force to be added to the error signal, an error signal correction unit for correcting the error signal, an error signal averaging unit for averaging the corrected error signal and a feedback unit for feeding back, as the receive signal, the averaged corrected error signal. The receive level variation correcting controlling force to be set by the receive level variation correcting controlling force setting unit is varied in response to the error signal.

    摘要翻译: 一种自动增益控制电路,其设置在调制解调器的解调部分中,以调整环路增益,使得带限接收信号的电平可以具有预定的参考值,并将接收信号输出到 调制解调器。 自动增益控制电路的改进在于,即使发生诸如增益命中或丢失之类的电路的干扰,可以继续进行常规通信,而不需要数据模式导入操作。 自动增益控制电路包括用于产生参考值的参考值设置单元,用于确定接收信号和参考值之间的误差信号的误差计算单元,用于设置接收电平变化的接收电平变化校正控制力设置单元 校正误差信号中的加权控制力,用于校正误差信号的误差信号校正单元,用于对校正误差信号进行平均的误差信号平均单元和用于反馈的反馈单元作为接收信号的平均校正误差 信号。 由接收电平变化校正控制力设定单元设定的接收电平变化校正控制力响应于误差信号而变化。

    Pattern formation method and method and apparatus for production of a semiconductor device using said method
    10.
    发明授权
    Pattern formation method and method and apparatus for production of a semiconductor device using said method 失效
    用于使用所述方法制造半导体器件的图案形成方法和方法和装置

    公开(公告)号:US06673526B1

    公开(公告)日:2004-01-06

    申请号:US08518363

    申请日:1995-08-23

    IPC分类号: G03B2754

    CPC分类号: G03F7/70125 G03F7/70283

    摘要: A pattern formation method and method and apparatus for production of a semiconductor device using that method which irradiate light from a light source to a phase shifting mask through a fly's-eye lens comprised of an assembly of a plurality of lenses, transfer the pattern of the phase shifting mask onto the substrate, and form the pattern on the substrate, wherein the amount of light made incident upon the center portion of the fly's-eye lens is lowered by 2 to 90 percent, preferably 10 to 90 percent, further preferably 20 to 80 percent or 20 to 60 percent, relative to the amount of light incident upon the peripheral portion of the fly's-eye lens.

    摘要翻译: 一种用于制造半导体器件的图案形成方法和方法,该半导体器件使用通过由多个透镜的组件构成的蝇眼透镜将来自光源的光照射到相移掩模的方法, 相移掩模到基板上,并且在基板上形成图案,其中入射在飞眼镜片的中心部分上的光量降低了2%到90%,优选地是10%到90%,进一步优选地是20到 80%或20%至60%,相对于入射到飞眼镜片的周边部分的光量。