摘要:
A method of manufacturing an electro-optical device having a plurality of unit regions arranged in a matrix on a surface of a flat plate-shaped base substrate. In each of the plurality of unit regions, a pixel electrode is formed. A counter electrode is formed on an opposite side to the base substrate with respect to the pixel electrodes. In pixel regions, which are first unit regions constituting a predetermined image among the plurality of unit regions, OLED elements are selectively formed. The OLED elements are interposed between the respective pixel electrodes and the counter electrode. In non-pixel regions, which are second unit regions other than the first unit regions among the plurality of unit regions, insulators are formed. The insulators are interposed between the respective pixel electrodes and the counter electrode.
摘要:
A method of manufacturing an electro-optical device having a plurality of unit regions arranged in a matrix on a surface of a flat plate-shaped base substrate. In each of the plurality of unit regions, a pixel electrode is formed. A counter electrode is formed on an opposite side to the base substrate with respect to the pixel electrodes. In pixel regions, which are first unit regions constituting a predetermined image among the plurality of unit regions, OLED elements are selectively formed. The OLED elements are interposed between the respective pixel electrodes and the counter electrode. In non-pixel regions, which are second unit regions other than the first unit regions among the plurality of unit regions, insulators are formed. The insulators are interposed between the respective pixel electrodes and the counter electrode.
摘要:
A method of manufacturing an electro-optical device having a plurality of unit regions arranged in a matrix on a surface of a flat plate-shaped base substrate. In each of the plurality of unit regions, a pixel electrode is formed. A counter electrode is formed on an opposite side to the base substrate with respect to the pixel electrodes. In pixel regions, which are first unit regions constituting a predetermined image among the plurality of unit regions, OLED elements are selectively formed. The OLED elements are interposed between the respective pixel electrodes and the counter electrode. In non-pixel regions, which are second unit regions other than the first unit regions among the plurality of unit regions, insulators are formed. The insulators are interposed between the respective pixel electrodes and the counter electrode.
摘要:
A plurality of unit regions 51 are divided on a surface of a flat plate-shaped base substrate 10. In each of the plurality of unit regions 51, a pixel electrode 11 is formed. A counter electrode 15 is formed on an opposite side to the base substrate 10 with respect to the respective pixel electrodes 11. In pixel regions 511, which are regions constituting a predetermined image among the plurality of unit regions 51, OLED elements 21 are selectively formed. The OLED elements 21 are interposed between the respective pixel electrodes 11 and the counter electrode 15. In non-pixel regions 512, which are regions other than the pixel regions 511 among the plurality of unit regions 51, insulators 30 are formed. The insulators 30 are interposed between the respective pixel electrodes 11 and the counter electrode 15.
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.
摘要:
An electro-optical device includes a plurality of pixel circuits that are disposed to correspond to intersections of a plurality of scanning lines and a plurality of data lines, a scanning line driving circuit that sequentially selects the plurality of scanning lines to apply a selection voltage to the selected scanning line, a data line driving circuit that applies any one of an on voltage and an off voltage to the plurality of data lines in accordance with gray-scale levels of pixel circuits corresponding to intersections of the data lines and the selected scanning line by the scanning line driving circuit, and a signal supply circuit that supplies a driving signal, of which the level periodically changes, to a signal supply line. Each of the pixel circuits has a first transistor in which, when the on voltage is applied to a gate electrode, a first terminal is connected to a second terminal, an electro-optical element that is connected to the first terminal of the first transistor, a first capacitor one end of which is connected to the second terminal of the first transistor and simultaneously the other end of which is connected to the signal supply line, a second capacitor one end of which is connected to the gate electrode of the first transistor, and a second transistor in which, when the selection voltage is applied to a gate electrode connected to a corresponding scanning line, a first terminal connected to a corresponding data line is connected to a second terminal connected to one end of the second capacitor.
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.
摘要:
To reduce a time for applying a target voltage to a gate of a driving transistor. During an initializing period, both ends of a capacitive element become a short-circuited state by turning on transistors, so that node A and B becomes a voltage made by subtracting the threshold voltage Vthp of the driving transistor from a power source voltage VEL. During a writing period, the transistor is turned on and a data signal X-j is supplied to change the voltage at the node B as much as a voltage corresponding the current which is to flow into an OLED element. The node A is changed from the threshold voltage as much as the value obtained by dividing the voltage change by capacity ratio. During a light-emitting period, the transistor is turned on, so that the current corresponding to the voltage at the node A flows through the OLED element.
摘要:
To reduce the time for writing a voltage onto a gate of a driving transistor. In an initialization period, a node B is fixed to an initial voltage VINI, transistors are turned on, and a current flows into an OLED element, such that a voltage according to the current is held at the node A. Thereafter, the transistors are sequentially turned off, such that a threshold voltage of a driving transistor is held at the node A. In a writing period, a transistor is turned on and a data signal X-j is supplied, such that a voltage of the node B varies by the amount according to the current flowing into the OLED element. The voltage of the node A varies from the threshold voltage by the amount which is obtained by dividing the voltage variation by a capacitance ratio. In a light-emitting period, the transistor is turned on, such that a current according to the voltage of the node A flows into the OLED element.