公开(公告)号：US09859136B2

公开(公告)日：2018-01-02

申请号：US14447029

申请日：2014-07-30

Applicant: Tokyo Electron Limited

Inventor： Hiromitsu Namba ,  . Fitrianto ,  Yoichi Tokunaga ,  Yoshifumi Amano

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3213

CPC classification number: H01L21/6708 ,  H01L21/02087 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67109 ,  H01L21/6838

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.