公开(公告)号：US20250138429A1

公开(公告)日：2025-05-01

申请号：US18498698

申请日：2023-10-31

Applicant: Tokyo Electron Limited

Inventor： Qi WANG ,  Steven GRZESKOWIAK ,  Nicholas SMIESZEK ,  Blaze MESSER ,  Sergey VORONIN ,  Akiteru KO ,  Eric Chih-Fang LIU ,  Ashawaraya SHALINI ,  Da SONG

IPC: G03F7/36 ,  G03F7/004 ,  H01L21/66

Abstract: A method of endpoint detection includes performing a surface treatment on a wafer without plasma in a process chamber which includes an outlet configured to output an exhaust gas of the surface treatment. An exhaust plasma is generated from the exhaust gas in a plasma coupler. The exhaust plasma is analyzed to determine an endpoint of the surface treatment. A system includes a process chamber configured to receive a wafer and perform a surface treatment on the wafer without plasma. The process chamber includes an outlet configured to output an exhaust gas of the surface treatment. A plasma coupler is configured to receive the exhaust gas and generate an exhaust plasma therefrom. A detector is configured to receive and analyze the exhaust plasma.