公开(公告)号：US20240387186A1

公开(公告)日：2024-11-21

申请号：US18320775

申请日：2023-05-19

Applicant: Tokyo Electron Limited

Inventor： Sergey VORONIN ,  Qi WANG ,  Hamed HAJIBABAEINAJAFABADI

IPC: H01L21/308 ,  H01J37/32 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/67

Abstract: A method for manufacturing semiconductor devices is disclosed. The method includes providing, in a chamber, a substate covered by a patterned mask. The method includes applying, in the chamber, radiation locally on a portion of the substate that is not covered by the patterned mask. The method includes etching, in the chamber, the portion of the substate through a dry etching process.

公开(公告)号：US20250138429A1

公开(公告)日：2025-05-01

申请号：US18498698

申请日：2023-10-31

Applicant: Tokyo Electron Limited

Inventor： Qi WANG ,  Steven GRZESKOWIAK ,  Nicholas SMIESZEK ,  Blaze MESSER ,  Sergey VORONIN ,  Akiteru KO ,  Eric Chih-Fang LIU ,  Ashawaraya SHALINI ,  Da SONG

IPC: G03F7/36 ,  G03F7/004 ,  H01L21/66

Abstract: A method of endpoint detection includes performing a surface treatment on a wafer without plasma in a process chamber which includes an outlet configured to output an exhaust gas of the surface treatment. An exhaust plasma is generated from the exhaust gas in a plasma coupler. The exhaust plasma is analyzed to determine an endpoint of the surface treatment. A system includes a process chamber configured to receive a wafer and perform a surface treatment on the wafer without plasma. The process chamber includes an outlet configured to output an exhaust gas of the surface treatment. A plasma coupler is configured to receive the exhaust gas and generate an exhaust plasma therefrom. A detector is configured to receive and analyze the exhaust plasma.