公开(公告)号：US20250138429A1

公开(公告)日：2025-05-01

申请号：US18498698

申请日：2023-10-31

Applicant: Tokyo Electron Limited

Inventor： Qi WANG ,  Steven GRZESKOWIAK ,  Nicholas SMIESZEK ,  Blaze MESSER ,  Sergey VORONIN ,  Akiteru KO ,  Eric Chih-Fang LIU ,  Ashawaraya SHALINI ,  Da SONG

IPC: G03F7/36 ,  G03F7/004 ,  H01L21/66

Abstract: A method of endpoint detection includes performing a surface treatment on a wafer without plasma in a process chamber which includes an outlet configured to output an exhaust gas of the surface treatment. An exhaust plasma is generated from the exhaust gas in a plasma coupler. The exhaust plasma is analyzed to determine an endpoint of the surface treatment. A system includes a process chamber configured to receive a wafer and perform a surface treatment on the wafer without plasma. The process chamber includes an outlet configured to output an exhaust gas of the surface treatment. A plasma coupler is configured to receive the exhaust gas and generate an exhaust plasma therefrom. A detector is configured to receive and analyze the exhaust plasma.

公开(公告)号：US20140357084A1

公开(公告)日：2014-12-04

申请号：US14294278

申请日：2014-06-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akiteru KO ,  Angelique D. Raley ,  Kiyohito Ito

IPC: H01L21/308 ,  H01L21/033

CPC classification number: H01L21/0337 ,  H01L21/3086 ,  H01L21/31144

Abstract: A method which is particularly advantageous for improving a Self-Aligned Pattern (SAP) etching process. In such a process, facets formed on a spacer layer can cause undesirable lateral etching in an underlying layer beneath the spacer layer when the underlying layer is to be etched. This detracts from the desired vertical form of the etch. The etching of the underlying layer is performed in at least two steps, with a passivation layer or protective layer formed between the etch steps, so that sidewalls of the underlying layer that was partially etched during the initial etching are protected. After the protective layer is formed, the etching of the remaining portions of the underlying layer can resume.

Abstract translation: 一种特别有利于改进自对准图案（SAP）蚀刻工艺的方法。 在这种过程中，当衬底层被蚀刻时，形成在间隔层上的刻面可能在间隔层下面的下层中产生不期望的横向蚀刻。 这会损害所需垂直形式的蚀刻。 底层的蚀刻在至少两个步骤中进行，其中在蚀刻步骤之间形成钝化层或保护层，使得在初始蚀刻期间被部分蚀刻的下层的侧壁被保护。 在形成保护层之后，可以恢复下层的其余部分的蚀刻。