公开(公告)号：US10115586B2

公开(公告)日：2018-10-30

申请号：US15587570

申请日：2017-05-05

Applicant: Tokyo Electron Limited

Inventor： Jacques Faguet ,  Bruce A. Altemus ,  Kazuya Ichiki

IPC: H01L21/02 ,  C23C16/48 ,  C23C16/56

Abstract: A method is provided for depositing a planarization layer over features on a substrate using sequential polymerization chemical vapor deposition. According to one embodiment, the method includes providing a substrate containing a plurality of features with gaps between the plurality of features, delivering precursor molecules by gas phase exposure to the substrate, adsorbing the precursor molecules on the substrate to at least substantially fill the gaps with a layer of the adsorbed precursor molecules, and reacting the precursor molecules to form a polymer layer that at least substantially fills the gaps.

公开(公告)号：US20170323784A1

公开(公告)日：2017-11-09

申请号：US15587570

申请日：2017-05-05

Applicant: Tokyo Electron Limited

Inventor： Jacques Faguet ,  Bruce A. Altemus ,  Kazuya Ichiki

IPC: H01L21/02 ,  C23C16/48 ,  C23C16/56

CPC classification number: H01L21/02271 ,  B05D1/60 ,  B05D3/066 ,  B05D3/067 ,  C23C16/48 ,  C23C16/56 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/02321

Abstract: A method is provided for depositing a planarization layer over features on a substrate using sequential polymerization chemical vapor deposition. According to one embodiment, the method includes providing a substrate containing a plurality of features with gaps between the plurality of features, delivering precursor molecules by gas phase exposure to the substrate, adsorbing the precursor molecules on the substrate to at least substantially fill the gaps with a layer of the adsorbed precursor molecules, and reacting the precursor molecules to form a polymer layer that at least substantially fills the gaps.