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    Dynamically adjusted purge timing in wet atomic layer etching
    2.
    发明授权
    Dynamically adjusted purge timing in wet atomic layer etching 有权

    公开(公告)号：US11915941B2

    公开(公告)日：2024-02-27

    申请号：US17580936

    申请日：2022-01-21

    Applicant: Tokyo Electron Limited

    Inventor： Jacques Faguet ,  Tetsuya Sakazaki ,  Paul Abel

    IPC: H01L21/311 ,  H01L21/67

    CPC classification number: H01L21/31116 ,  H01L21/67075

    Abstract: The present disclosure provides various embodiments of an improved wet atomic layer etching (ALE) process. More specifically, the present disclosure provides various embodiments of methods that improve a wet ALE process by providing a dynamic ALE cycle timing schedule that balances throughput and etch rate with post-etch surface roughness. As described in more detail below, the methods disclosed herein may adjust the purge timing between ALE cycles and/or between individual surface modification and selective dissolution steps to provide a desired throughput, etch rate and/or post-etch surface roughness in a wet ALE process.

    Systems For Etching A Substrate Using A Hybrid Wet Atomic Layer Etching Process
    3.
    发明申请
    Systems For Etching A Substrate Using A Hybrid Wet Atomic Layer Etching Process 有权

    公开(公告)号：US20220148885A1

    公开(公告)日：2022-05-12

    申请号：US17584667

    申请日：2022-01-26

    Applicant: Tokyo Electron Limited

    Inventor： Paul Abel ,  Jacques Faguet

    IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67

    Abstract: The present disclosure provides a system for etching an exposed material on a substrate disposed within a process chamber using a hybrid atomic layer etching (ALE) process that combines a gas-phase surface modification step with a liquid-phase dissolution step within the same process chamber. In the hybrid ALE process disclosed herein, a gas-phase reactant is used to modify an exposed surface of the material to create a modified surface layer, and one or more liquid-phase reactants are used to selectively dissolve the modified surface layer without dissolving the material underlying the modified surface layer. Once the modified surface layer is selectively dissolved, the substrate may be dried and the gas-phase surface modification and liquid-phase dissolution steps may be repeated for one or more ALE cycles until a desired amount of the material is etched.

    PROCESSING SYSTEMS AND PLATFORMS FOR ROUGHNESS REDUCTION OF MATERIALS USING ILLUMINATED ETCH SOLUTIONS
    5.
    发明申请
    PROCESSING SYSTEMS AND PLATFORMS FOR ROUGHNESS REDUCTION OF MATERIALS USING ILLUMINATED ETCH SOLUTIONS 审中-公开

    公开(公告)号：US20200075351A1

    公开(公告)日：2020-03-05

    申请号：US16402634

    申请日：2019-05-03

    Applicant: Tokyo Electron Limited

    Inventor： Omid Zandi ,  Jacques Faguet

    IPC: H01L21/67 ,  H01L21/3213

    Abstract: Processing system and platform embodiments are described that illuminate etch solutions to provide controlled etching of materials. The processing systems and platforms deposit a liquid etch solution over a material to be etched and illuminate the liquid etch solution to adjust levels of reactants. The liquid etch solution has a first level of reactants, and the illumination causes the liquid etch solution to have a second level of reactants that is different than the first level. The material is modified with the illuminated etch solution, and the modified material is removed. The delivery, exposing, and removing can be repeated to provide a cyclic etch. Further, oxidation and dissolution can occur simultaneously or can occur in multiple steps. The material being etched can be a polycrystalline material, a polycrystalline metal, and/or other material. One liquid etch solution can include hydrogen peroxide that is illuminated to form hydroxyl radicals.

    VAPOR DEPOSITION SYSTEM AND METHOD OF OPERATING
    6.
    发明申请
    VAPOR DEPOSITION SYSTEM AND METHOD OF OPERATING 审中-公开
    蒸气沉积系统和操作方法

    公开(公告)号：US20160024651A1

    公开(公告)日：2016-01-28

    申请号：US14874860

    申请日：2015-10-05

    Applicant: Tokyo Electron Limited

    Inventor： Jacques Faguet

    IPC: C23C16/452 ,  B05D1/00 ,  C23C16/455

    CPC classification number: C23C16/452 ,  B05D1/60 ,  C23C16/44 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/487 ,  C23C16/50

    Abstract: A system for depositing a thin film on a substrate using a vapor deposition process is described. The deposition system includes a process chamber having a vacuum pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate, a non-ionizing heat source separate from the substrate holder that is configured to receive a flow of the film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated, and one or more power sources coupled to the heating element array and configured to provide an electrical signal to the at least one heating element zone. The deposition system further includes a remote source coupled to the process chamber and configured to supply a reactive composition to the process chamber to chemically interact with the substrate, wherein the remote source comprises a remote plasma generator, a remote radical generator, a remote ozone generator, or a water vapor generator, or a combination of two or more thereof.

    Abstract translation: 描述了使用气相沉积工艺在衬底上沉积薄膜的系统。 沉积系统包括具有真空泵送系统的处理室，该真空泵系统构造成抽空处理室;衬底保持器，其耦合到处理室并且被配置为支撑衬底;气体分配系统，其耦合到处理室并被配置成引入成膜 组合物到基板表面附近的处理空间，与基板保持器分离的非电离热源，其构造成接收成膜组合物的流动并引起一个或多个成分的热分解 加热时的成膜组合物，以及耦合到加热元件阵列并被配置为向至少一个加热元件区域提供电信号的一个或多个电源。 沉积系统还包括耦合到处理室并被配置为将反应性组合物供应到处理室以与衬底化学相互作用的远程源，其中远程源包括远程等离子体发生器，远程自发发生器，远程臭氧发生器 ，或水蒸汽发生器，或其两个或更多个的组合。

    Dynamically Adjusted Purge Timing In Wet Atomic Layer Etching
    8.
    发明申请
    Dynamically Adjusted Purge Timing In Wet Atomic Layer Etching 有权

    公开(公告)号：US20220254646A1

    公开(公告)日：2022-08-11

    申请号：US17580936

    申请日：2022-01-21

    Applicant: Tokyo Electron Limited

    Inventor： Jacques Faguet ,  Tetsuya Sakazaki ,  Paul Abel

    IPC: H01L21/311 ,  H01L21/67

    Abstract: The present disclosure provides various embodiments of an improved wet atomic layer etching (ALE) process. More specifically, the present disclosure provides various embodiments of methods that improve a wet ALE process by providing a dynamic ALE cycle timing schedule that balances throughput and etch rate with post-etch surface roughness. As described in more detail below, the methods disclosed herein may adjust the purge timing between ALE cycles and/or between individual surface modification and selective dissolution steps to provide a desired throughput, etch rate and/or post-etch surface roughness in a wet ALE process.

    Methods For Etching A Substrate Using A Hybrid Wet Atomic Layer Etching Process
    9.
    发明申请
    Methods For Etching A Substrate Using A Hybrid Wet Atomic Layer Etching Process 有权

    公开(公告)号：US20220148882A1

    公开(公告)日：2022-05-12

    申请号：US17580879

    申请日：2022-01-21

    Applicant: Tokyo Electron Limited

    Inventor： Paul Abel ,  Jacques Faguet

    IPC: H01L21/306

    Abstract: The present disclosure provides a hybrid atomic layer etching (ALE) process that combines a gas-phase surface modification step with a liquid-phase dissolution step for etching an exposed material on a substrate disposed within a process chamber. In the hybrid ALE process disclosed herein, a gas-phase reactant is used to modify an exposed surface of the material to create a modified surface layer, and one or more liquid-phase reactants are used to selectively dissolve the modified surface layer without dissolving the material underlying the modified surface layer. Once the modified surface layer is selectively dissolved, the substrate may be dried and the gas-phase surface modification and liquid-phase dissolution steps may be repeated for one or more ALE cycles until a desired amount of the material is etched.

    PHOTO-ASSISTED CHEMICAL VAPOR ETCH FOR SELECTIVE REMOVAL OF RUTHENIUM
    10.
    发明申请
    PHOTO-ASSISTED CHEMICAL VAPOR ETCH FOR SELECTIVE REMOVAL OF RUTHENIUM 审中-公开

    公开(公告)号：US20200243346A1

    公开(公告)日：2020-07-30

    申请号：US16773211

    申请日：2020-01-27

    Applicant: Tokyo Electron Limited

    Inventor： Omid Zandi ,  Jacques Faguet

    IPC: H01L21/3213

    Abstract: Methods and systems herein enable selective removal of ruthenium (Ru) metal at high throughput, and without potentially damaging effects of plasma. Techniques include a photo-assisted chemical vapor etch (PCVE) method to selectively remove Ru metal as a volatile species. A substrate with ruthenium surfaces is positioned within a processing chamber. A photo-oxidizer is received in vapor form in the processing chamber. The photo-oxidizer is a species that generates reactive oxygen species in response to actinic radiation. Reactive oxygen species are then generated by irradiation of the photo-oxidizer, such as with ultraviolet radiation. The reactive oxygen species react with ruthenium surfaces causing the ruthenium surfaces to become oxidized. Oxidized ruthenium is then removed from the substrate, such as be vaporization.

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