公开(公告)号：US09945032B2

公开(公告)日：2018-04-17

申请号：US15053878

申请日：2016-02-25

申请人： The Aerospace Corporation

发明人： Henry Helvajian

IPC分类号： B32B17/06 ,  C23C16/48 ,  C23C14/22 ,  C23C16/44

CPC分类号： C23C16/483 ,  C23C14/22 ,  C23C16/4415 ,  C23C16/48 ,  Y10T428/31507 ,  Y10T428/31786 ,  Y10T428/31935 ,  Y10T428/31938

摘要： Under one aspect, a structure is provided that includes a substrate including a first material having a threshold temperature above which the first material is damaged and a layer consisting essentially of a second material molecularly bonded to the first material of the substrate. The second material is formed on the substrate at a reaction temperature that is higher than the threshold temperature of the first material. An interface between the substrate and the second material is a substantially defect-free surface.

公开(公告)号：US20170342560A1

公开(公告)日：2017-11-30

申请号：US15536943

申请日：2015-11-25

申请人： Picosun Oy

发明人： Timo MALINEN ,  Juhana KOSTAMO ,  Wei-Min LI ,  Tero PILVI

IPC分类号： C23C16/455 ,  C23C16/48

CPC分类号： C23C16/45527 ,  C23C16/45536 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/48 ,  C23C16/482 ,  C23C16/483

摘要： A method that includes performing an atomic layer deposition sequence including at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle including introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously.

公开(公告)号：US09822443B1

公开(公告)日：2017-11-21

申请号：US15010653

申请日：2016-01-29

申请人： Multibeam Corporation

发明人： Michael C. Smayling ,  Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC分类号： H01J37/30 ,  C23C14/48

CPC分类号： H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

公开(公告)号：US09534296B2

公开(公告)日：2017-01-03

申请号：US14217055

申请日：2014-03-17

申请人： McAlister Technologies, LLC

发明人： Roy Edward McAlister

IPC分类号： C23C16/48 ,  C23C16/02 ,  C23C16/26 ,  C23C16/34 ,  B82Y30/00 ,  C01B31/02 ,  C01B31/04 ,  H01M4/88 ,  H01M8/04 ,  B82Y40/00

CPC分类号： C23C16/48 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/186 ,  C23C16/0263 ,  C23C16/26 ,  C23C16/342 ,  H01M4/88 ,  H01M8/04007 ,  Y02P70/56

摘要： Methods, systems, and devices are disclosed for precision fabrication of nanoscale materials and devices. In one aspect, a method to manufacture a nanoscale structure include a process to dissociate a feedstock substance including a gas or a vapor into constituents, in which the constituents include individual atoms and/or molecules. The method includes a process to deposit the constituents on a surface at a particular location. The method includes a process to grow layers layer by layer using two or more particle and/or energy beams to form a material structure, in which the energy beams include at least one of a laser beam or an atomic particle beam.

摘要翻译： 公开了用于纳米尺度材料和器件的精密制造的方法，系统和装置。 在一个方面，制造纳米尺度结构的方法包括将包括气体或蒸气的原料物质分解成组分的方法，其中组分包括各自的原子和/或分子。 该方法包括将成分沉积在特定位置的表面上的过程。 该方法包括使用两个或更多个粒子和/或能量束一层一层地生长层以形成材料结构的过程，其中能量束包括激光束或原子粒子束中的至少一个。

公开(公告)号：US09441297B2

公开(公告)日：2016-09-13

申请号：US13699573

申请日：2011-05-19

申请人： Dieter Fischer ,  Martin Jansen ,  Xermán F. De La Fuente Leis

发明人： Dieter Fischer ,  Martin Jansen ,  Xermán F. De La Fuente Leis

IPC分类号： C23C14/30 ,  H05B7/00 ,  C23C16/48 ,  C23C14/28 ,  C23C14/54

CPC分类号： C23C16/48 ,  C23C14/28 ,  C23C14/548

摘要： The invention relates to a process for applying solid layers (14) to an object (12) to be coated by means of at least one radiation source (2), in particular a laser radiation source, which comprises at least the step of removal of a sample (4) in the solid state in at least partially different sections (6) by means of at least one beam (8) emitted by the radiation source (2) to at least partly convert the sample (4) into a gaseous state (10) which deposits at least partially on the object (12) to be coated in order to form a solid layer (14), where at the same time the alignment of a trace of the emitted beam (8) is altered during the step of removal of the sample and the sample (4) is moved.

公开(公告)号：US20160251759A1

公开(公告)日：2016-09-01

申请号：US15022457

申请日：2014-09-02

申请人： KORNIC ENC CO., LTD.

发明人： Choon Soo LEE ,  Hong Ki JEONG

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/48 ,  C23C16/44 ,  C23C16/50

CPC分类号： C23C16/45548 ,  C23C16/4412 ,  C23C16/45517 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/45551 ,  C23C16/45574 ,  C23C16/48 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32899 ,  H01J2237/332

摘要： An atomic layer deposition device having a scan-type reactor includes multiple unit process chambers arranged in a stacking type for an atomic layer deposition process. The atomic layer deposition device includes upper and lower process chamber parts able to be separated from and coupled to each other. The scan-type reactor moves between the upper and lower process chamber parts over a substrate to which a raw material precursor is adsorbed, and causes a reaction precursor to react with the raw material precursor.The device fundamentally eliminates an area of coexistence of the raw material precursor and the reaction precursor, thereby making unnecessary any additional process for removing films so as to prevent films from being deposited outside the substrate, extending the maintenance cycle, and improving thin film quality and productivity through particle generation suppression.

摘要翻译： 具有扫描型电抗器的原子层沉积装置包括以原子层沉积工艺的堆叠方式布置的多个单元处理室。 原子层沉积装置包括能够彼此分离和耦合的上部和下部处理室部分。 扫描型反应器在吸附原料前体的基板上在上下处理室部分之间移动，并使反应前体与原料前体反应。 该装置从根本上消除了原料前体和反应前体共存的区域，从而不需要任何附加的去除膜的方法，以防止膜沉积在基板外部，延长维护周期，并提高薄膜质量， 生产力通过粒子产生抑制。

公开(公告)号：US20160141177A1

公开(公告)日：2016-05-19

申请号：US14900821

申请日：2014-04-28

申请人： Jürgen STEIGER ,  Alexey MERKULOV ,  EVONIK DEGUSSA GMBH

发明人： Juergen STEIGER ,  Alexey MERKULOV ,  Arne HOPPE

IPC分类号： H01L21/288 ,  C23C16/46 ,  H01L21/02 ,  C23C16/48

CPC分类号： H01L21/288 ,  C07F5/00 ,  C23C16/407 ,  C23C16/46 ,  C23C16/48 ,  C23C18/1216 ,  C23C18/14 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02623 ,  H01L21/02628 ,  H01L21/02664

摘要： The present invention relates to liquid formulations which can be produced by dissolving at least one indium alkoxide compound which can be prepared by reacting an indium trihalide InX3 where X=F, Cl, Br, I with a secondary amine of the formula R′2NH where R′=alkyl in a molar ratio of from 8:1 to 20:1 to the indium trihalide in the presence of an alcohol of the generic formula ROH where R=alkyl in at least one solvent, a process for producing them, their use for producing indium oxide-containing or (semi)conducting layers and processes for producing indium oxide-containing layers which use the formulation of the invention.

摘要翻译： 本发明涉及通过溶解至少一种可以通过使三卤化铟InX 3（其中X = F，Cl，Br，I）与式R'2NH的仲胺反应制备的烷氧基化铟化合物来制备的液体制剂，其中式 在通式ROH的醇的存在下，R'= 8:1至20:1摩尔比的烷基，其中R =烷基在至少一种溶剂中，其制备方法，其用途 用于生产含氧化铟或（半）导电层的方法和使用本发明制剂的含氧化铟的层的制造方法。

公开(公告)号：US20160108282A1

公开(公告)日：2016-04-21

申请号：US14893824

申请日：2014-05-26

申请人： KONICA MINOLTA, INC.

发明人： Hirohide ITO

IPC分类号： C09D183/14 ,  C23C16/48 ,  C09D183/06 ,  C23C16/22

CPC分类号： C09D183/14 ,  B32B15/08 ,  B32B2457/00 ,  C08G77/62 ,  C08J7/042 ,  C08J7/123 ,  C08J2367/02 ,  C08J2483/04 ,  C08J2483/16 ,  C09D183/06 ,  C09D183/16 ,  C23C16/22 ,  C23C16/48 ,  H01L51/5253 ,  H05B33/04

摘要： [Object] To provide a means capable of further improving gas barrier capabilities and durability of gas barrier capabilities for a gas barrier film.[Solving Means] A gas barrier film having: a substrate; a first barrier layer that is arranged on at least one surface of the substrate, has a film density of 1.5 to 2.1 g/cm3, and includes an inorganic compound; and a second barrier layer that is formed on the surface of the substrate on the same side where the first barrier layer is formed and includes silicon atoms, oxygen atoms, and at least one added element selected from the group consisting of elements of Groups 2-14 of the long form of the periodic table (excluding silicon and carbon), the abundance ratio of oxygen atoms to silicon atoms (O/Si) being 1.4 to 2.2, and the abundance ratio of nitrogen atoms to silicon atoms (N/Si) being 0 to 0.4.

摘要翻译： 提供能够进一步提高气体阻隔性能的气体阻隔性能和耐气体阻隔性能的耐久性的手段。 [解决方案]一种阻气膜，具有：基材; 布置在基板的至少一个表面上的第一阻挡层具有1.5至2.1g / cm 3的膜密度，并且包括无机化合物; 以及第二阻挡层，其形成在与形成有第一阻挡层的同一侧的基板的表面上，并且包括硅原子，氧原子和至少一种添加元素，所述添加元素选自2- 14周期表（不包括硅和碳），氧原子与硅原子（O / Si）的丰度比为1.4〜2.2，氮原子与硅原子的丰度比（N / Si） 为0至0.4。

公开(公告)号：US20160035543A1

公开(公告)日：2016-02-04

申请号：US14884949

申请日：2015-10-16

申请人： Tokyo Electron Limited

发明人： Yoshiyuki Kobayashi ,  Jun Watanabe ,  Takuya Okada ,  Tomoyuki Nara

IPC分类号： H01J37/32 ,  C23C16/48 ,  C23C16/50

CPC分类号： H01J37/32642 ,  C23C16/48 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/67103 ,  H01L21/68735

摘要： There is provided a plasma processing apparatus including a focus ring capable of preventing a part of a heat transfer sheet from adhering to and remaining on a mounting table. The plasma processing apparatus comprises: a chamber for performing a plasma process on a target object; a mounting table configured to mount thereon the target object; and a focus ring configured to surround the target object, the focus ring being in contact with the mounting table via a flexible heat transfer sheet. Further, the heat transfer sheet has a contact surface in contact with the mounting table and an anti-adhesion layer formed on the contact surface, and the anti-adhesion layer is located between said contact surface of the heat transfer sheet and a mounting surface of the mounting table. Furthermore, the anti-adhesion layer contains heat conductive particulates, and the heat transfer sheet is formed in an annular shape.

摘要翻译： 提供了一种等离子体处理装置，其包括能够防止传热片的一部分粘附并保持在安装台上的聚焦环。 等离子体处理装置包括：用于对目标物体进行等离子体处理的室; 安装台，其构造成在其上安装所述目标物体; 以及配置成围绕所述目标物体的聚焦环，所述聚焦环经由柔性传热片与所述安装台接触。 此外，传热片具有与安装台接触的接触表面和形成在接触表面上的防粘附层，并且防粘附层位于传热片的接触表面和安装表面之间 安装台。 此外，防粘层含有导热性微粒，传热片形成为环状。

公开(公告)号：US20160002039A1

公开(公告)日：2016-01-07

申请号：US14771697

申请日：2014-02-28

申请人： David THOMPSON ,  Applied Materials, Inc.

发明人： David Thompson

IPC分类号： C01B21/082 ,  C23C16/455 ,  C23C16/36 ,  C23C16/48

CPC分类号： C01B21/0828 ,  C23C16/308 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/48

摘要： Provided are methods for the deposition of films comprising SiCN and SiCON. Certain methods involve exposing a substrate surface to a first and second precursor, the first precursor having a formula (XyH3-ySi)zCH4-z, (XyH3-ySi)(CH2)(SiXpH2-p)(CH2)(SiXyH3-y), or (XyH3-ySi)(CH2)n(SiXyH3-y), wherein X is a halogen, y has a value of between 1 and 3, and z has a value of between 1 and 3, p has a value of between 0 and 2, and n has a value between 2 and 5, and the second precursor comprising a reducing amine. Certain methods also comprise exposure of the substrate surface to an oxygen source to provide a film comprising SiCON.

摘要翻译： 提供了沉积包含SiCN和SiCON的膜的方法。 某些方法包括将基材表面暴露于第一和第二前体，第一前体具有式（XyH3-ySi）zCH4-z，（XyH3-ySi）（CH2）（SiXpH2-p）（CH2）（SiXyH3-y） ，或（XyH3-ySi）（CH2）n（SiXyH3-y），其中X是卤素，y具有1和3之间的值，z具有1和3之间的值，p的值在 0和2，并且n具有2和5之间的值，并且第二前体包含还原胺。 某些方法还包括将衬底表面暴露于氧源以提供包含SiCON的膜。