公开(公告)号：US12237172B2

公开(公告)日：2025-02-25

申请号：US17746406

申请日：2022-05-17

Applicant: Tokyo Electron Limited

Inventor： Du Zhang ,  Christophe Vallee ,  Mingmei Wang

IPC: H01L21/3065 ,  C23F1/12 ,  C23G5/00 ,  H01L21/311 ,  H01L21/3213

Abstract: A method of processing a substrate that includes: loading the substrate in a plasma processing chamber, the substrate having a surface including an oxide, the oxide including an alkaline earth metal; flowing a process gas including CCl4 into the plasma processing chamber; in the plasma processing chamber, forming a fluorine-free plasma from the process gas by applying a source power to a source electrode of the plasma processing chamber; and exposing the substrate to the fluorine-free plasma to etch the oxide of the surface.

公开(公告)号：US20230374670A1

公开(公告)日：2023-11-23

申请号：US17746406

申请日：2022-05-17

Applicant: Tokyo Electron Limited

Inventor： Du Zhang ,  Christophe Vallee ,  Mingmei Wang

IPC: C23F1/12

CPC classification number: C23F1/12

Abstract: A method of processing a substrate that includes: loading the substrate in a plasma processing chamber, the substrate having a surface including an oxide, the oxide including an alkaline earth metal; flowing a process gas including CCl4 into the plasma processing chamber; in the plasma processing chamber, forming a fluorine-free plasma from the process gas by applying a source power to a source electrode of the plasma processing chamber; and exposing the substrate to the fluorine-free plasma to etch the oxide of the surface.