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    Sidewall Inorganic Passivation for Dielectric Etching Via Surface Modification
    1.
    发明公开
    Sidewall Inorganic Passivation for Dielectric Etching Via Surface Modification 审中-公开

    公开(公告)号：US20240162043A1

    公开(公告)日：2024-05-16

    申请号：US17988217

    申请日：2022-11-16

    Applicant: Tokyo Electron Limited

    Inventor： Du Zhang ,  Yu-Hao Tsai ,  Mingmei Wang

    IPC: H01L21/3065 ,  H01L21/02

    CPC classification number: H01L21/30655 ,  H01L21/02118 ,  H01L21/02252 ,  H01L21/0234

    Abstract: A method for processing a substrate that includes: performing a cyclic process including a plurality of cycles, where the cyclic process includes, forming a carbon-containing layer over sidewalls of a recess in a Si-containing dielectric layer of the substrate, the forming including exposing the substrate disposed in a plasma processing chamber to a first plasma generated from a first gas including carbon and hydrogen, modifying a surface of the carbon-containing layer by exposing the substrate to a second plasma generated from a second gas including oxygen, and forming a passivation layer over the modified surface of the carbon-containing layer by exposing the substrate to a third gas including B, Si, or Al.

    High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formation
    3.
    发明授权
    High-throughput dry etching of films containing silicon-oxygen components or silicon-nitrogen components by proton-mediated catalyst formation 有权

    公开(公告)号：US11804380B2

    公开(公告)日：2023-10-31

    申请号：US17515133

    申请日：2021-10-29

    Applicant: Tokyo Electron Limited

    Inventor： Du Zhang ,  Yu-Hao Tsai ,  Mingmei Wang

    IPC: H01L21/311

    CPC classification number: H01L21/31116

    Abstract: A method of high-throughput dry etching of a film by proton-mediated catalyst formation. The method includes providing a substrate having a film thereon containing silicon-oxygen components, silicon-nitrogen components, or both, introducing an etching gas in the process chamber, plasma-exciting the etching gas, and exposing the film to the plasma-excited etching gas to etch the film. In one example, the etching gas contains at least three different gases that include a fluorine-containing gas, a hydrogen-containing gas, and a nitrogen-containing gas, plasma-exciting the etching gas. In another example, the etching gas contains at least four different gases that include a fluorine-containing gas, a hydrogen-containing gas, an oxygen-containing gas, and a silicon-containing gas.

    CONFORMAL AMORPHOUS CARBON LAYER ETCH WITH SIDE-WALL PASSIVATION
    4.
    发明申请
    CONFORMAL AMORPHOUS CARBON LAYER ETCH WITH SIDE-WALL PASSIVATION 有权

    公开(公告)号：US20220199410A1

    公开(公告)日：2022-06-23

    申请号：US17550182

    申请日：2021-12-14

    Applicant: Tokyo Electron Limited

    Inventor： Du Zhang ,  Shihsheng Chang ,  Yunho Kim ,  Mingmei Wang ,  Andrew Metz

    IPC: H01L21/3065 ,  H01L21/308

    Abstract: A method for etching high-aspect ratio recessed features in an amorphous carbon layer is presented. The method includes providing a substrate containing an amorphous carbon layer and a patterned mask layer, plasma-etching a recessed feature through less than an entire thickness of the amorphous carbon layer using the patterned mask, forming a passivation layer on a sidewall of the etched amorphous carbon layer in the recessed feature by exposing the substrate to a passivation gas in the absence of a plasma, and repeating the plasma-etching and forming the passivation layer at least once to extend the recessed feature in the amorphous carbon layer.

    METHOD AND SYSTEM FOR PLASMA PROCESS
    6.
    发明申请
    METHOD AND SYSTEM FOR PLASMA PROCESS 有权

    公开(公告)号：US20250166972A1

    公开(公告)日：2025-05-22

    申请号：US18517206

    申请日：2023-11-22

    Applicant: Tokyo Electron Limited

    Inventor： Evrim Solmaz ,  Du Zhang ,  Barton Lane

    IPC: H01J37/32

    Abstract: An example method for a plasma process includes generating plasma within a process chamber with source power (SP) pulses. The source power pulses have a repetition frequency. The method further includes adjusting a neutral flux within the process chamber by changing the repetition frequency of the source power pulses. In some embodiments, the plasma etches a substrate.

    Method and System for Plasma Process
    7.
    发明申请
    Method and System for Plasma Process 有权

    公开(公告)号：US20250132128A1

    公开(公告)日：2025-04-24

    申请号：US18489416

    申请日：2023-10-18

    Applicant: Tokyo Electron Limited

    Inventor： Evrim Solmaz ,  Du Zhang ,  Barton Lane

    IPC: H01J37/32

    Abstract: A method for a plasma process includes generating plasma within a process chamber with a source power pulse and applying a bias power pulse to a substrate holder within the process chamber. A frequency of the bias power pulse increases from a first frequency value to a second frequency value during the bias power pulse. The bias power pulse occurs after the source power pulse.

    ETCH PROCESS FOR OXIDE OF ALKALINE EARTH METAL
    9.
    发明公开
    ETCH PROCESS FOR OXIDE OF ALKALINE EARTH METAL 审中-公开

    公开(公告)号：US20230374670A1

    公开(公告)日：2023-11-23

    申请号：US17746406

    申请日：2022-05-17

    Applicant: Tokyo Electron Limited

    Inventor： Du Zhang ,  Christophe Vallee ,  Mingmei Wang

    IPC: C23F1/12

    CPC classification number: C23F1/12

    Abstract: A method of processing a substrate that includes: loading the substrate in a plasma processing chamber, the substrate having a surface including an oxide, the oxide including an alkaline earth metal; flowing a process gas including CCl4 into the plasma processing chamber; in the plasma processing chamber, forming a fluorine-free plasma from the process gas by applying a source power to a source electrode of the plasma processing chamber; and exposing the substrate to the fluorine-free plasma to etch the oxide of the surface.

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