公开(公告)号：US20240234174A1

公开(公告)日：2024-07-11

申请号：US18040669

申请日：2021-09-06

Applicant: Tokyo Electron Limited

Inventor： Kentaro YAMAMURA ,  Shinichiro KAWAKAMI ,  Toshiki SAGARA ,  Eiichi MATSUOKA

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/683

CPC classification number: H01L21/67103 ,  H01L21/324 ,  H01L21/6838

Abstract: A thermal treatment apparatus for thermally treating a substrate on which a coating film of a resist is formed and subjected to an exposure treatment, includes: a hot plate supporting and heating the substrate; a chamber housing the hot plate, the chamber having a ceiling forming thereunder a treatment space for performing the thermal treatment; a gas discharger discharging a treatment gas toward the substrate; a gas supplier supplying gas toward the substrate; a central exhauster exhausting the treatment space from a position close to a center of the substrate; a peripheral exhauster exhausting the treatment space from a side closer to a peripheral edge portion of the substrate; and a controller conducting a control to continue the discharge, supply of gas, and exhaust by the peripheral exhauster during the thermal treatment and enhance the exhaust by the central exhauster from a middle of the thermal treatment.