公开(公告)号：US20190332013A1

公开(公告)日：2019-10-31

申请号：US16504448

申请日：2019-07-08

Applicant: Tokyo Electron Limited

Inventor： Shinichiro KAWAKAMI ,  Hiroshi MIZUNOURA

IPC: G03F7/11 ,  G03F7/30 ,  B05D1/32 ,  G03F7/16 ,  G03F7/004 ,  H01L21/027 ,  G03F7/38 ,  G03F7/20 ,  G03F7/32 ,  B05D1/36 ,  B05D1/00

Abstract: A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.

公开(公告)号：US20190317407A1

公开(公告)日：2019-10-17

申请号：US16376192

申请日：2019-04-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroshi MIZUNOURA ,  Yohei SANO ,  Shinichiro KAWAKAMI

IPC: G03F7/16 ,  C23F1/02

Abstract: There is provided a substrate processing apparatus, including: a film forming part configured to form a metal-containing film on a front surface of a substrate; a film cleaning part configured to clean the metal-containing film formed on a peripheral edge portion of the substrate; and a controller. The controller is configured to control the film forming part so as to form the metal-containing film on the front surface of the substrate, and control the film cleaning part so as to supply a first chemical liquid and a second chemical liquid.

公开(公告)号：US20240274438A1

公开(公告)日：2024-08-15

申请号：US18644661

申请日：2024-04-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi YAMAUCHI ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/0337 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/31144 ,  H01L21/6715

Abstract: A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

公开(公告)号：US20240248413A1

公开(公告)日：2024-07-25

申请号：US18416087

申请日：2024-01-18

Applicant: Tokyo Electron Limited

Inventor： Takeshi SHIMOAOKI ,  Arnaud Alain Jean DAUENDORFFER ,  Keisuke YOSHIDA ,  Shinichiro KAWAKAMI ,  Yuya KAMEI ,  Soichiro OKADA ,  Takafumi NIWA

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H01L21/033

CPC classification number: G03F7/706837 ,  G03F7/161 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/70008 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70866 ,  H01L21/0337 ,  G03F7/0042

Abstract: A substrate treatment method includes: developing a substrate which has a coating film of an inorganic resist formed on a base film thereon and has been subjected to an exposure treatment, with a developing solution to form a pattern of the inorganic resist; supplying an embedding solution to the developed substrate to fill a space between adjacent protrusions of the pattern; drying the filled embedding solution to form an embedded film on the substrate; and reducing a thickness of the embedded film by an ultraviolet ray.

公开(公告)号：US20240234174A1

公开(公告)日：2024-07-11

申请号：US18040669

申请日：2021-09-06

Applicant: Tokyo Electron Limited

Inventor： Kentaro YAMAMURA ,  Shinichiro KAWAKAMI ,  Toshiki SAGARA ,  Eiichi MATSUOKA

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/683

CPC classification number: H01L21/67103 ,  H01L21/324 ,  H01L21/6838

Abstract: A thermal treatment apparatus for thermally treating a substrate on which a coating film of a resist is formed and subjected to an exposure treatment, includes: a hot plate supporting and heating the substrate; a chamber housing the hot plate, the chamber having a ceiling forming thereunder a treatment space for performing the thermal treatment; a gas discharger discharging a treatment gas toward the substrate; a gas supplier supplying gas toward the substrate; a central exhauster exhausting the treatment space from a position close to a center of the substrate; a peripheral exhauster exhausting the treatment space from a side closer to a peripheral edge portion of the substrate; and a controller conducting a control to continue the discharge, supply of gas, and exhaust by the peripheral exhauster during the thermal treatment and enhance the exhaust by the central exhauster from a middle of the thermal treatment.

公开(公告)号：US20180164689A1

公开(公告)日：2018-06-14

申请号：US15823661

申请日：2017-11-28

Applicant: Tokyo Electron Limited

Inventor： Yohei SANO ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO ,  Takahiro SHIOZAWA ,  Keisuke YOSHIDA ,  Tomoya ONITSUKA

IPC: G03F7/38 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/67 ,  G03F7/004

CPC classification number: G03F7/38 ,  G03F7/0043 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/31058 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/6719

Abstract: A thermal treatment apparatus that performs a thermal treatment on a metal-containing film formed on a substrate, includes: a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film, wherein at the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.

公开(公告)号：US20240120217A1

公开(公告)日：2024-04-11

申请号：US18473459

申请日：2023-09-25

Applicant: Tokyo Electron Limited

Inventor： Shinichiro KAWAKAMI ,  Kosuke YOSHIHARA ,  Satoru SHIMURA ,  Yuhei KUWAHARA ,  Tomoya ONITSUKA ,  Soichiro OKADA ,  Tetsunari FURUSHO

IPC: H01L21/67 ,  H01L21/027

CPC classification number: H01L21/67109 ,  H01L21/027

Abstract: A substrate treatment method includes: performing a first heat treatment on a substrate on which a coating film of a metal-containing resist has been formed and subjected to an exposure treatment, to form the metal-containing resist into a precursor in an exposed region of the coating film; thereafter, performing a second heat treatment on the substrate to condense the metal-containing resist formed into the precursor in the exposed region of the coating film; and thereafter, performing a developing treatment on the substrate.

公开(公告)号：US20200279736A1

公开(公告)日：2020-09-03

申请号：US16759532

申请日：2018-10-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi YAMAUCHI ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/67

Abstract: A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

公开(公告)号：US20180088466A1

公开(公告)日：2018-03-29

申请号：US15712248

申请日：2017-09-22

Applicant: Tokyo Electron Limited

Inventor： Shinichiro KAWAKAMI ,  Hiroshi MIZUNOURA

IPC: G03F7/11 ,  H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32

CPC classification number: G03F7/11 ,  B05D1/005 ,  B05D1/32 ,  B05D1/322 ,  B05D1/36 ,  G03F7/0043 ,  G03F7/16 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/3021 ,  G03F7/3057 ,  G03F7/32 ,  G03F7/38 ,  G03F7/70991 ,  H01L21/0274

Abstract: A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.

公开(公告)号：US20160124307A1

公开(公告)日：2016-05-05

申请号：US14896415

申请日：2014-06-06

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Takahiro KITANO ,  Tadatoshi TOMITA ,  Takanori NISHI ,  Shinichiro KAWAKAMI ,  Takashi YAMAUCHI

IPC: G03F7/20 ,  G03F7/16

CPC classification number: G03F7/20 ,  B81C2201/0149 ,  C08L53/00 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/16 ,  G03F7/32 ,  G03F7/40 ,  H01L21/02282 ,  H01L21/0274 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6708

Abstract: A substrate treatment method includes: a polymer separation step of phase-separating a block copolymer into a hydrophilic polymer and a hydrophobic polymer; and a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer, wherein in the polymer removal step, the hydrophilic polymer is removed by: irradiating the phase-separated block copolymer with an energy ray; then supplying a first polar organic solvent having a first degree of dissolving the hydrophilic polymer, being lower in boiling point than water and capable of dissolving water, and not dissolving the hydrophobic polymer, to the block copolymer; and then supplying a second polar organic solvent having a second dissolving degree lower than the first dissolving degree, being higher in boiling point than water, and not dissolving the hydrophobic polymer, to the block copolymer.

Abstract translation: 基板处理方法包括：将嵌段共聚物相分离成亲水性聚合物和疏水性聚合物的聚合物分离工序; 以及从相分离的嵌段共聚物中选择性除去亲水性聚合物的聚合物去除步骤，其中在聚合物去除步骤中，通过以下方式除去亲水性聚合物：用能量射线照射相分离的嵌段共聚物; 然后提供具有第一溶解亲水性聚合物的第一极性有机溶剂，其沸点低于水，并且能够将水溶解并且不将疏水性聚合物溶解到嵌段共聚物中; 然后提供第二溶解度低于第一溶解度的第二极性有机溶剂，其沸点高于水，并且不将疏水性聚合物溶解在嵌段共聚物中。