公开(公告)号：US20240189856A1

公开(公告)日：2024-06-13

申请号：US18282025

申请日：2022-03-01

Applicant: Tokyo Electron Limited

Inventor： Teruhiko KODAMA ,  Koichi MATSUNAGA ,  Hideaki IWASAKA

IPC: B05C9/14 ,  B05C15/00 ,  B05D3/02 ,  B05D3/04

CPC classification number: B05C9/14 ,  B05C15/00 ,  B05D3/02 ,  B05D3/0466

Abstract: A substrate processing apparatus that forms a friction reducing film on a rear surface of a substrate includes a processing container configured to accommodate the substrate and to define a hermetically-sealed processing space, a heating element configured to heat the rear surface of the substrate inside the processing container, a supplier configured to supply a material forming the friction reducing film toward the rear surface of the substrate inside the processing container, a first gas supplier configured to supply an inert gas to a peripheral edge of the substrate from a space above the substrate, a second gas supplier configured to supply the inert gas closer to a center of the substrate than the first gas supplier from a space above the substrate inside the processing, and an exhauster configured to exhaust an atmosphere of the processing space from a periphery or a space below the substrate.